SG7N06P, SG7N06DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG7N06DP SG7N06P Symbol Test Conditions o Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Maximum Ratings Unit o VCES VCGR TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; 600 600 V VGES VGEM Continuous Transient ±20 ±30 V IC25 IC90 ICM TC=25oC TC=90oC TC=25oC, 1 ms VGE=15V; TVJ=125oC; RG=22 (RBSOA) Clamped inductive load, L=300uH PC TC=25oC SSOA A 54 W A -55...+150 150 -55...+150 TJ TJM Tstg Mounting torque, (TO-220) o o 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Md 14 7 30 ICM=14 @ 0.8 VCES M3 M3.5 C C 0.45/4 0.55/5 Nm/Ib.in. 4 g Weight (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. BVCES IC=250uA; VGE=0V VGE(th) IC=250uA; VCE=VGE ICES VCE=0.8VCES; VGE=0V; typ. max. 600 V 2.5 5.5 o TJ=25 C 100 o 500 TJ=125 C IGES VCE=0V; VGE=±20V VCE(sat) IC=IC90; VGE=15V Unit 1.5 V uA ±100 nA 1.8 V SG7N06P, SG7N06DP Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol gts Characteristic Values Test Conditions IC=IC90; VCE=10V Pulse test, t 300us, duty cycle min. typ. 3 7 VCE=25V; VGE=0V; f=1MHz 50 17 Qg 25 IC=IC90; VGE=15V; VCE=0.5VCES tri pF 5 Qgc td(on) S 500 Cres Qge max. 2% Cies Coes Unit nC 10 o Inductive load, TJ=25 C 9 ns IC=IC90; VGE=15V; L=300uH 10 ns mJ Eon VCE=0.8VCES; RG=Roff=22 0.07 td(off) Remarks:Switching times may increase 100 200 ns for VCE(Clamp) 150 250 ns 0.6 mJ tfi 0.8VCES' higher TJ or Eoff increased RG 0.3 td(on) Inductive load, TJ=25oC 10 ns IC=IC90; VGE=15V; L=300uH 15 ns tri Eon VCE=0.8VCES; RG=Roff=22 0.07 mJ td(off) Remarks:Switching times may 200 ns increase for VCE(Clamp) 250 ns 0.6 mJ tfi Eoff 0.8VCES' higher TJ or increased RG RthJC 2.3 RthCK 0.25 Characteristic Values Test Conditions min. VF typ. o IF=10A; TVJ=150 C TVJ=25 C trr RthJC V 2.95 VR=100V; IF=25A; -diF/dt=100A/us L 0.05uH; TVJ=100oC 2 IF=1A; -di/dt=50A/us; VR=30V; TJ=25oC 35 Diode Unit max. 1.96 o IRM K/W (TJ=25oC, unless otherwise specified) Reverse Diode (FRED) Symbol K/W 2.5 A ns 1.6 K/W