SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications • High input impedance • High peak current capability (130A) • Easy gate drive Application Strobe flash. C C G G E D-PAK Absolute Maximum Ratings Symbol VCES VGES ICM (1) PC TJ Tstg TL GC E I-PAK E TC = 25°C unless otherwise noted Description Collector - Emitter Voltage Gate - Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds @ TC = 25°C SGR / SGU15N40L 400 ±6 130 45 -40 to +150 -40 to +150 Units V V A W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA (D-PAK) RθJA (I-PAK) Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 3.0 50 110 Units °C/W °C/W °C/W Notes : (2) Mounted on 1” square PCB (FR4 or G-10 Material) ©2002 Fairchild Semiconductor Corporation SGR15N40L / SGU15N40L Rev. A1 SGR15N40L / SGU15N40L IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 450 --- ---- -10 ± 0.1 V uA uA IC = 1mA, VCE = VGE IC = 130A, VGE = 4.5V 0.5 2.0 1.0 4.5 1.4 8.0 V V VGE = 0V, VCE = 30V, f = 1MHz ---- 3000 45 30 ---- pF pF pF VCC = 300V, IC = 130A, VGE = 4.5V, RG = 15Ω Resistive Load ----- 0.08 1.4 0.1 1.1 --0.5 2.0 us us us us Off Characteristics BVCES ICES IGES Collector - Emitter Breakdown Voltage Collector Cut-Off Current G - E Leakage Voltage On Characteristics VGE(th) VCE(sat) G - E Threshold Voltage C - E Saturation Current Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time * Notes : Recommendation of RG Value : RG≥15Ω ©2002 Fairchild Semiconductor Corporation SGR15N40L / SGU15N40L Rev. A1 SGR15N40L / SGU15N40L Electrical Characteristics of the IGBT T Collector-Emitter Voltage, VCE [V] 4.5V 150 4V Collector Current, I C [A] Common Emitter VGE = 4.5V 5V Commom Emitter TC = 25℃ 120 3.5V 3V 90 VGE = 2.5V 60 30 6 130A 5 100A 4 IC = 70A 3 2 0 0 2 4 6 -50 8 0 Common Emitter TC = 25℃ Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 150 10 Common Emitter TC = -40℃ 8 6 130A 100A 4 IC = 70A 2 0 8 6 130A 100A 4 IC = 70A 2 0 0 1 2 3 4 5 6 0 Gate-Emitter Voltage , VGE [V] 1 2 3 4 5 6 Gate-Emitter Voltage, VGE [V] Fig 4. Saturation Voltage vs. VGE Fig 3. Saturation Voltage vs. VGE 10000 10 Common Emitter TC = 125℃ Cies 8 130A Capacitance [pF] Collector-Emitter Voltage, VCE [V] 100 Fig 2. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 1. Typical Output Characteristics 10 50 Case Temperature, TC [℃] Collector-Emitter Voltage, VCE [V] 6 100A 4 IC = 70A 1000 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ 100 Coes 2 Cres 10 0 0 1 2 3 4 Gate-Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 5 6 0 10 20 30 40 Collector-Emitter Voltage, VCE [V] Fig 6. Capacitance Characteristics SGR15N40L / SGU15N40L Rev. A1 SGR15N40L / SGU15N40L 7 180 180 Collector Peak Current, I CP [A] Gate - Emitter Voltage, VGE [V] Common Emitter VCC = 300V, RL = 2.2Ω TC = 25℃ 4 2 160 140 120 100 80 60 40 20 0 0 0 10 20 30 40 Gate Charge, Qg [nC] Fig 7. Gate Charge Characteristics ©2002 Fairchild Semiconductor Corporation 50 60 0 2 4 6 8 10 Gate-Emitter Voltage, VGE [V] Fig 8. Collector Current Limit vs. Gate - Emitter Voltage Limit SGR15N40L / SGU15N40L Rev. A1 SGR15N40L / SGU15N40L 200 6 D-PAK MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (1.00) (3.05) (2XR0.25) (0.10) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.90) 2.30 ±0.20 (0.70) 2.30TYP [2.30±0.20] (0.50) 2.30 ±0.10 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.10 ±0.20 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGR15N40L / SGU15N40L Rev. A1 SGR15N40L / SGU15N40L Package Dimension I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 0.76 ±0.10 2.30TYP [2.30±0.20] 0.50 ±0.10 16.10 ±0.30 6.10 ±0.20 0.70 ±0.20 (0.50) 9.30 ±0.30 MAX0.96 (4.34) 1.80 ±0.20 0.80 ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGR15N40L / SGU15N40L Rev. A1 SGR15N40L / SGU15N40L Package Dimension (Continued) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H5