4V Drive Nch+Pch MOSFET SH8M2 Dimensions (Unit : mm) Structure Silicon N-channel / P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Packaging specifications Package Type Inner circuit (8) Taping (7) (6) (5) TB Code Basic ordering unit (pieces) 2500 SH8M2 ∗2 ∗2 ∗1 Absolute maximum ratings (Ta=25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits Tr1 : N-ch Tr2 : P-ch 30 −30 ±20 ±20 ±3.5 ±3.5 ±14 ±14 1.6 −1.6 14 −14 2.0 150 −55 to +150 Unit V V A A A A W / TOTAL °C °C (1) ∗1 (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.12 - Rev.A SH8M2 Data Sheet N-ch Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Parameter − 30 − 1.0 − − − 2.0 − − − − − − − − − − − − − − 59 93 107 − 140 45 30 6 6 17 4 2.5 0.8 0.8 ±10 − 1 2.5 83 130 150 − − − − − − − − 3.5 − − Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 3.5A, VGS= 10V ID= 3.5A, VGS= 4.5V ID= 3.5A, VGS= 4V VDS= 10V, ID= 3.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 1.75A VGS= 10V RL= 8.57Ω RG=10Ω VDD 15V, VGS= 5V ID= 3.5A RL= 4.29Ω, RG= 10Ω ∗Pulsed Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − 1.2 Unit V Conditions IS= 6.4A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/3 2009.12 - Rev.A SH8M2 Data Sheet P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state − RDS (on)∗ resistance − Yfs ∗ 1.8 Forward transfer admittance Ciss − Input capacitance Coss − Output capacitance − Crss Reverse transfer capacitance − td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − tf ∗ Fall time − Qg ∗ Total gate charge − Qgs ∗ Gate-source charge Qgd ∗ − Gate-drain charge Typ. Max. − − − − 65 100 120 − 490 110 75 10 15 35 10 5.5 1.5 2.0 ±10 − −1 −2.5 90 140 165 − − − − − − − − 7.7 − − Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −3.5A, VGS= −10V ID= −1.75A, VGS= −4.5V ID= −1.75A, VGS= −4V VDS= −10V, ID= −1.75A VDS= −10V VGS= 0V f=1MHz VDD −15V ID= −1.75A VGS= −10V RL= 8.57Ω RG= 10Ω VDD −15V, VGS= −5V ID= −3.5A RL= 4.29Ω, RG= 10Ω ∗Pulsed Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − −1.2 Unit V Conditions IS= −1.6A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/3 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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