Si2341DS Vishay Siliconix New Product P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A)b 0.072 @ VGS = - 10 V - 2.8 0.120 @ VGS = - 4.5 V - 2.0 APPLICATIONS D Load Switch D PA Switch TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2341DS-T1 Top View Si2341DS (F1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)b Pulsed Drain TA= 25_C TA= 70_C Currenta ID Continuous Source Current (Diode Conduction)b IS TA= 25_C Power Dissipationb TA= 70_C Operating Junction and Storage Temperature Range PD V - 2.8 - 2.5 - 2.2 - 2.0 IDM A - 12 - 0.75 - 0.6 0.9 0.71 0.57 0.45 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Maximum Junction-to-Foot (Drain) RthJA RthJF Typical Maximum 115 140 140 175 60 75 Unit _C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72263 S-31675—Rev. B, 11-Aug-03 www.vishay.com 1 Si2341DS New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = - 10 mA - 30 VGS(th) VDS = VGS, ID = - 250 mA - 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain Source On-Resistance Drain-Source On Resistancea Forward Transconductancea Diode Forward Voltage rDS(on) DS( ) - 3.0 "100 VDS = - 24 V, VGS = 0 V -1 VDS = - 24 V, VGS = 0 V, TJ = 55_C - 10 VDS v - 5 V, VGS = - 10 V -6 V nA mA A VGS = - 10 V, ID = - 2.8 A 0.057 0.072 VGS = - 4.5 V, ID = - 2.0 A 0.090 0.120 gfs VDS = - 5 V, ID = - 2.8 A 8.0 VSD IS = - 0.75 A, VGS = 0 V - 0.8 - 1.2 9.5 15 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 15 V, VGS = - 10 V ID ^ - 2.8 A 1.5 nC 2.5 400 VDS = - 15 V, VGS = 0, f = 1 MHz 95 pF 70 Switchingc td(on) Turn On Time Turn-On Turn-Off Time tr td(off) VDD = - 15 V, RL =15 W ID ^ - 1.0 10A A, VGEN = - 4.5 45V RG = 6 W tf 7 15 15 25 20 30 20 30 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 www.vishay.com 2 Document Number: 72263 S-31675—Rev. B, 11-Aug-03 Si2341DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 12 Transfer Characteristics 12 TC = - 55_C VGS = 10 thru 5 V 10 10 I D - Drain Current (A) I D - Drain Current (A) 25_C 8 6 3V 4 2 8 125_C 6 4 2 2V 0 0 2 4 6 8 0 0.0 10 0.5 1.0 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 700 0.15 C - Capacitance (pF) r DS(on)- On-Resistance ( W ) 600 0.12 VGS = 4.5 V 0.09 VGS = 10 V 0.06 500 Ciss 400 300 200 Coss 0.03 100 Crss 0.00 0 0 2 4 6 8 10 0 5 Gate Charge 1.6 VDS = 15 V ID = 3 A 20 25 30 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3 A 8 1.4 r DS(on)- On-Resistance ( W ) (Normalized) V GS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 10 10 6 4 2 0 0 2 4 6 Qg - Total Gate Charge (nC) Document Number: 72263 S-31675—Rev. B, 11-Aug-03 8 10 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2341DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 1.0 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150_C 1 TJ = 25_C 0.8 0.6 ID = 3 A 0.4 0.2 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 8 10 Single Pulse Power 10 0.4 8 Power (W) V GS(th) Variance (V) Threshold Voltage ID = 250 mA 0.0 - 0.2 - 0.4 - 50 6 VGS - Gate-to-Source Voltage (V) 0.6 0.2 4 6 4 TA = 25_C Single Pulse 2 0 - 25 0 25 50 75 100 125 0.01 150 0.1 TJ - Temperature (_C) 1 10 100 1000 Time (sec) Safe Operating Area, Junction-to-Case 100.0 Limited by rDS(on) 10 ms I D - Drain Current (A) 10.0 100 ms 1 ms 1.0 10 ms 100 ms 0.1 TA = 25_C Single Pulse dc, 100 s, 10 s, 1 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72263 S-31675—Rev. B, 11-Aug-03 Si2341DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72263 S-31675—Rev. B, 11-Aug-03 www.vishay.com 5