Si5401DC New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.032 @ VGS = −4.5 V −7.1 0.040 @ VGS = −2.5 V −6.4 0.053 @ VGS = −1.8 V −5.5 D D D D Qg (Typ) TrenchFETr Power MOSFET Ultra-Low On-Resistance Thermally Enhanced ChipFETr Package 40% Smaller Footprint Than TSOP-6 APPLICATIONS 16.5 D Load Switch, PA Switch, and Battery Switch for Portable Devices 1206-8 ChipFETr 1 S D D D D D D G G S Marking Code BO XXX Lot Traceability and Date Code Part # Code D Bottom View P-Channel MOSFET Ordering Information: Si5401DC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID Continuous Source Currenta IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V −7.1 −5.2 −5.1 −3.7 IDM −20 −2.1 −1.1 2.5 1.3 1.3 0.7 TJ, Tstg −55 to 150 Soldering Recommendations (Peak Temperature)b, c Unit A W _C 260 THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 40 50 80 95 15 20 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73225 S-50038—Rev. A, 17-Jan-05 www.vishay.com 1 Si5401DC New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.40 Typ Max Unit −1.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source Drain Source On On-State State Resistancea Voltagea VDS = −20 V, VGS = 0 V −1 VDS = −20 V, VGS = 0 V, TJ = 85_C −5 VDS p−5 V, VGS = −4.5 V mA −20 A VGS = −4.5 V, ID = −5.2 A 0.026 0.032 VGS = −2.5 V, ID = −4.6 A 0.033 0.040 VGS = −1.8 V, ID = −1.9 A 0.044 0.053 gfs VDS = −10 V, ID = −5.2 A 20 VSD IS = −1.1 A, VGS = 0 V −0.8 −1.2 16.5 25 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance VDS = −10 V, VGS = −4.5 V, ID = −5.2 A 3.5 Rg Turn-On Delay Time f = 1 MHz 9 td(on) Rise Time VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Reverse Recovery Charge Qrr W 10 tr Turn-Off Delay Time nC 1.7 IF = −1.1 11A A, di/dt = 100 A/ms 15 25 40 115 175 70 105 30 60 140 ns nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 TC = −55_C VGS = 5 thru 2 V 16 I D − Drain Current (A) I D − Drain Current (A) 16 12 1.5 V 8 4 25_C 125_C 12 8 4 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 3.0 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 VGS − Gate-to-Source Voltage (V) Document Number: 73225 S-50038—Rev. A, 17-Jan-05 Si5401DC New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 2000 0.10 0.08 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 1800 0.06 VGS = 1.8 V VGS = 2.5 V 0.04 1600 Ciss 1400 1200 1000 800 600 0.02 Coss 400 VGS = 4.5 V 200 0.00 Crss 0 0 4 8 12 16 0 20 4 ID − Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 5.2 A VGS = 4.5 V, 2.5 V, 1.8 V ID = 5.2 A 4 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 VDS − Drain-to-Source Voltage (V) 5 3 2 1 1.2 1.0 0.8 0 0 4 8 12 16 0.6 −50 20 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.12 20 ID = 5.2 A r DS(on) − On-Resistance ( W ) TJ = 150_C I S − Source Current (A) 8 10 TJ = 125_C TJ = 25_C 0.10 0.08 0.06 TJ = 125_C 0.04 0.02 TJ = 25_C 0.00 1 0.0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) Document Number: 73225 S-50038—Rev. A, 17-Jan-05 1.0 1.2 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si5401DC New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA 0.2 30 Power (W) V GS(th) Variance (V) 0.3 0.1 20 0.0 10 −0.1 −0.2 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited *rDS(on) Limited I D − Drain Current (A) 10 P(t) = 0.001 1 0.1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 BVDSS Limited 0.01 0.1 P(t) = 1 P(t) = 10 dc TC = 25_C Single Pulse 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 73225 S-50038—Rev. A, 17-Jan-05 Si5401DC New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73225. Document Number: 73225 S-50038—Rev. A, 17-Jan-05 www.vishay.com 5