Si5441DC Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free Available 11 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code BA XX D Lot Traceability and Date Code P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5441DC Si5441DC-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V −3.9 −5.3 −3.8 −2.8 IDM Continuous Source Currenta −20 −2.1 −1.1 2.5 1.3 1.3 0.7 TJ, Tstg Unit −55 to 150 Soldering Recommendations (Peak Temperature)b, c A W _C 260 THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 40 50 80 95 15 20 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71055 S-50366—Rev. C, 28-Feb-05 www.vishay.com 1 Si5441DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.6 Typ Max Unit −1.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source Drain Source On On-State State Resistancea Voltagea VDS = −20 V, VGS = 0 V −1 VDS = −20 V, VGS = 0 V, TJ = 85_C −5 VDS p−5 V, VGS = −4.5 V mA −20 A VGS = −4.5 V, ID = −3.9 A 0.046 VGS = −3.6 V, ID = −3.7 A 0.050 0.06 VGS = −2.5 V, ID = −3.1 A 0.070 0.083 gfs VDS = −10 V, ID = −3.9 A 12 VSD IS = −1.1 A, VGS = 0 V −0.8 −1.2 11 22 VDS = −10 V,, VGS = −4.5 V,, ID = −3.9 A 3.0 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "12 V 0.055 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.5 Turn-On Delay Time td(on) 20 tr 35 55 65 100 45 70 30 60 Rise Time Turn-Off Delay Time VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = −1.1 A, di/dt = 100 A/ms nC 30 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 16 I D − Drain Current (A) I D − Drain Current (A) TC = −55_C VGS = 5 thru 3 V 16 2.5 V 12 8 2V 4 25_C 12 125_C 8 4 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Document Number: 71055 S-50366—Rev. C, 28-Feb-05 Si5441DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1800 Ciss 1500 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.20 0.15 VGS = 2.5 V 0.10 VGS = 3.6 V 1200 900 600 0.05 Coss 300 VGS = 4.5 V Crss 0.00 0 0 4 8 12 16 20 0 4 ID − Drain Current (A) 12 16 20 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 VDS = 10 V ID = 3.9 A VGS = 4.5 V ID = 3.9 A 4 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 8 3 2 1 1.2 1.0 0.8 0 0 3 6 9 0.6 −50 12 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 20 r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 10 TJ = 25_C 1 0.0 0.15 ID = 3.9 A 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 71055 S-50366—Rev. C, 28-Feb-05 1.2 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si5441DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.6 50 40 ID = 250 mA Power (W) V GS(th) Variance (V) 0.4 0.2 0.0 30 20 10 −0.2 −50 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 TJ − Temperature (_C) Normalized Effective Transient Thermal Impedance 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Time (sec) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71055. www.vishay.com 4 Document Number: 71055 S-50366—Rev. C, 28-Feb-05