VISHAY SI8802DB-T2-E1

New Product
Si8802DB
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.054 at VGS = 4.5 V
3.5
VDS (V)
8
0.060 at VGS = 2.5 V
3.3
0.068 at VGS = 1.8 V
3.1
0.086 at VGS = 1.5 V
2.3
0.135 at VGS = 1.2 V
1.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Small 0.8 mm x 0.8 mm Outline Area
• Low 0.4 mm max. profile
Qg (Typ.)
4.3 nC
• Low On-Resistance
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch with Low Voltage Drop
• Load Switch for 1.2 V, 1.5 V, 1.8 V Power Lines
• Smart Phones, Tablet PCs, Portable Media Players
MICRO FOOT
Bump Side View
S
Backside View
G
D
D
S
3
4
802
1
XXX
2
G
Device Marking: 802
xxx = Date/Lot Traceability Code
N-Channel MOSFET
Ordering Information: Si8802DB-T2-E1 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
8
Gate-Source Voltage
VGS
±5
TA = 70 °C
2.8a
ID
TA = 25 °C
3.0b
2.4b
TA = 70 °C
IDM
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
15
IS
TA = 25 °C
0.4b
0.9a
TA = 70 °C
0.6a
PD
TA = 25 °C
Soldering Recommendations (Peak Temperature)
W
0.5b
0.3b
TA = 70 °C
Operating Junction and Storage Temperature Range
A
0.7a
TA = 25 °C
TA = 25 °C
Maximum Power Dissipation
V
3.5a
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
- 55 to 150
c
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, d
Maximum Junction-to-Ambientb, e
Symbol
t5s
RthJA
Typical
Maximum
105
135
200
260
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8802DB
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
V
7
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.7
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 8 V, VGS = 0 V
1
VDS = 8 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
a
Forward Transconductance
RDS(on)
gfs
VDS 5 V, VGS = 4.5 V
- 2.1
0.35
10
µA
A
VGS 4.5 V, ID = 1 A
0.044
VGS 2.5 V, ID = 1 A
0.049
0.060
VGS 1.8 V, ID = 0.5 A
0.055
0.068
VGS 1.5 V, ID = 0.2 A
0.060
0.086
VGS 1.2 V, ID = 0.1 A
0.080
0.135
VDS = 4 V, ID = 1 A
13
VDS = 4 V, VGS = 4.5 V, ID = 1 A
0.44
0.054

S
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
4.3
td(off)
nC
0.72
f = 1 MHz
td(on)
tr
6.5
VDD = 4 V, RL = 4 
ID  1 A, VGEN = 4.5 V, Rg = 1 
tf

3.5
5
10
15
30
22
40
7
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TA = 25 °C
0.7
15
IS = 1 A, VGS = 0 V
0.7
1.2
A
V
Body Diode Reverse Recovery Time
trr
20
40
ns
Body Diode Reverse Recovery Charge
Qrr
5
10
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 1 A, dI/dt = 100 A/µs, TJ = 25 °C
14
60
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8802DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
15
VGS = 5 V thru 2 V
8
ID - Drain Current (A)
ID - Drain Current (A)
12
VGS = 1.5 V
9
6
3
6
TC = 25 °C
4
TC = 125 °C
2
VGS = 1 V
TC = - 55 °C
0
0
0
0.5
1
1.5
2
2.5
VDS - Drain-to-Source Voltage (V)
3
0.0
0.3
0.6
0.9
1.2
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
600
0.16
500
Ciss
0.12
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
V GS = 1.2 V
V GS = 1.5 V
0.08
VGS = 1.8 V
0.04
VGS = 4.5 V
400
300
200
Coss
100
VGS = 2.5 V
Crss
0
0
0
3
6
9
12
0
15
2
4
6
8
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
5
1.4
RDS(on) - On-Resistance (Normalized)
ID = 1 A
VGS - Gate-to-Source Voltage (V)
1.5
4
VDS = 4 V
3
VDS = 2 V
VDS = 6.4 V
2
1
0
0
1
2
3
4
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
5
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1 A
1.2
VGS = 1.5 V, ID = 0.2 A
VGS = 1.2 V, ID = 0.1 A
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8802DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.15
ID = 1 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.12
10
TJ = 150 °C
1
TJ = 25 °C
0.09
TJ = 125 °C
0.06
TJ = 25 °C
0.03
0.1
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
14
0.8
12
0.7
Power (W)
VGS(th) (V)
10
0.6
ID = 250 μA
8
6
0.5
4
0.4
2
0.3
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
10 s, 1s, 100 ms
0.1
TA = 25 °C
DC
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
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Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8802DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.8
3.5
2.5
Power Dissipation (W)
ID - Drain Current (A)
3
2
1.5
1
0.6
0.4
0.2
0.5
0.0
0
0
25
50
75
100
TA - Ambient Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
T A - Ambient Temperature (°C)
Power Derating
Note:
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8802DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 185 °C/W
3. T JM - T A = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 330 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with minimum copper)
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Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8802DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH)
S
D
G
e
802
S
s
XXX
D
4xØb
s
e
Mark on Backside of die
D
4 x Ø 0.205 to 0.225 Note 4
A2
Solder Mask ~ Ø 0.215
3
A
e
2
4
1
A1
e
Recommended Land
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø0.165 mm to Ø 0.185 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5. is location of pin 1.
·
Millimetersa
Dim.
Inches
Min.
Nom.
Max.
Min.
Nom.
Max.
A
0.314
0.357
0.400
0.0124
0.0141
0.0157
A1
0.127
0.157
0.187
0.0050
0.0062
0.0074
A2
0.187
0.200
0.213
0.0074
0.0079
0.0084
b
0.165
0.175
0.185
0.0064
0.0068
0.0072
e
0.400
0.0157
s
0.180
0.200
0.220
0.0070
0.0078
0.0086
D
0.760
0.800
0.840
0.0299
0.0314
0.0330
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67999.
Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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