VISHAY SI8812DB

New Product
Si8812DB
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) () Max.
ID (A)a
0.059 at VGS = 4.5 V
3.2
0.061 at VGS = 3.7 V
3.1
0.065 at VGS = 2.5 V
3.0
0.085 at VGS = 1.8 V
2.7
•
•
•
•
•
Qg (Typ.)
6.3 nC
APPLICATIONS
MICRO FOOT
Bump Side View
Backside View
G
2
1
D
S
3
D
• Load Switch with Low Voltage Drop
• Power Management
• For Smart Phones, Tablet PCs,
Mobile Computing
xxx
AG
S
TrenchFET® Power MOSFET
Small 0.8 mm x 0.8 mm Outline Area
Low 0.4 mm max. profile
Low On-Resistance
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
G
4
Device Marking: xxx = Date/Lot Traceability Code
AG = Device Marking Code
S
Ordering Information: Si8812DB-T2-E1 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
TA = 70 °C
2.6a
ID
TA = 25 °C
2.3b
1.8b
TA = 70 °C
IDM
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
0.7a
TA = 25 °C
IS
TA = 25 °C
0.4b
0.9a
TA = 70 °C
0.6a
PD
TA = 25 °C
W
0.5b
0.3b
TA = 70 °C
Operating Junction and Storage Temperature Range
A
20
TA = 25 °C
Maximum Power Dissipation
V
3.2a
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)c
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, d
Maximum Junction-to-Ambientb, e
Symbol
t5s
RthJA
Typical
Maximum
105
135
200
260
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Document Number: 63682
S12-2050-Rev. A, 27-Aug-12
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8812DB
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
V
29
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
gfs
VDS 5 V, VGS = 4.5 V
- 2.6
0.4
10
µA
A
VGS 4.5 V, ID = 1 A
0.048
0.059
VGS 3.7 V, ID = 1 A
0.049
0.061
VGS 2.5 V, ID = 1 A
0.052
0.065
VGS 1.8 V, ID = 0.5 A
0.060
0.085
VDS = 10 V, ID = 1 A
12

S
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VDS = 10 V, VGS = 8 V, ID = 1 A
VDS = 10 V, VGS = 4.5 V, ID = 1 A
Turn-On Delay Time
tr
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time

6
10
20
VDD = 10 V, RL = 10 
ID  1 A, VGEN = 4.5 V, Rg = 1 
13
25
33
60
10
20
5
10
11
20
VDD = 10 V, RL = 10 
ID  1 A, VGEN = 8 V, Rg = 1 
tf
Fall Time
nC
1.4
tf
td(off)
Turn-Off Delay Time
0.8
td(on)
tr
Rise Time
17
10
f = 1 MHz
td(on)
Rise Time
11
6.3
25
50
10
20
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TA = 25 °C
0.7
20
IS = 1 A, VGS = 0 V
0.8
1.2
A
V
Body Diode Reverse Recovery Time
trr
10
20
ns
Body Diode Reverse Recovery Charge
Qrr
3
10
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 1 A, dI/dt = 100 A/µs, TJ = 25 °C
6
4
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 63682
S12-2050-Rev. A, 27-Aug-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8812DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
10
VGS = 5 V thru 2.5 V
VGS = 2 V
8
ID - Drain Current (A)
ID - Drain Current (A)
16
12
VGS = 1.5 V
8
4
6
TC = 25 °C
4
TC = 125 °C
2
TC = - 55 °C
VGS = 1 V
0
0
0.0
0.5
1.0
1.5
VDS - Drain-to-Source Voltage (V)
2.0
0.0
0.4
0.8
1.2
1.6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
2.0
Transfer Characteristics
800
0.14
600
0.11
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
VGS = 1.8 V
0.08
VGS = 3.7 V
VGS = 2.5 V
Ciss
400
200
0.05
Coss
VGS = 4.5 V
Crss
0.02
0
0
4
8
12
ID - Drain Current (A)
16
20
0
4
8
12
16
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
20
Capacitance
1.5
8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 1 A
ID = 1 A
6
VDS = 10 V
VDS = 5 V
4
VDS = 16 V
2
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 63682
S12-2050-Rev. A, 27-Aug-12
10
12
1.4
VGS = 4.5 V, 3.7 V
1.3
1.2
VGS = 2.5 V, 1.8 V
1.1
1.0
0.9
0.8
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8812DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.15
100
ID = 1 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.12
10
TJ = 150 °C
1
TJ = 25 °C
0.09
TJ = 125 °C
0.06
TJ = 25 °C
0.03
0.1
0.00
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
Source-Drain Diode Forward Voltage
2
3
4
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
0.9
14
0.8
12
10
0.7
ID = 250 μA
Power (W)
VGS(th) (V)
1
0.6
8
6
0.5
4
0.4
0.3
- 50
2
- 25
0
25
50
75
100
125
0
0.001
150
TJ - Temperature (°C)
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1
1 ms
10 ms
0.1
TA = 25 °C
BVDSS Limited
10 s, 1 s, 100 ms
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact: [email protected]
Document Number: 63682
S12-2050-Rev. A, 27-Aug-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8812DB
Vishay Siliconix
4
0.8
3
0.6
Power (W)
ID - Drain Current (A)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
1
0.4
0.2
0
0.0
0
25
50
75
100
125
TA - Ambient Temperature (°C)
Current Derating*
150
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating
Note:
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63682
S12-2050-Rev. A, 27-Aug-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8812DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with minimum copper)
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For technical questions, contact: [email protected]
Document Number: 63682
S12-2050-Rev. A, 27-Aug-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si8812DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH)
S
D
G
e
xxx
S
s
AG
D
4xØb
s
e
Mark on Backside of die
D
4 x Ø 0.205 to 0.225 Note 4
2
A2
Solder Mask ~ Ø 0.215
A
e
3
4
1
A1
e
Recommended Land
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø0.165 mm to Ø 0.185 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5. is location of pin 1.
·
Dim.
Millimetersa
Inches
Min.
Nom.
Max.
Min.
Nom.
Max.
A
0.314
0.357
0.400
0.0124
0.0141
0.0157
A1
0.127
0.157
0.187
0.0050
0.0062
0.0074
A2
0.187
0.200
0.213
0.0074
0.0079
0.0084
b
0.165
0.175
0.185
0.0064
0.0068
0.0072
e
0.400
0.0157
s
0.180
0.200
0.220
0.0070
0.0078
0.0086
D
0.760
0.800
0.840
0.0299
0.0314
0.0330
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63682.
Document Number: 63682
S12-2050-Rev. A, 27-Aug-12
For technical questions, contact: [email protected]
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
Mouser Electronics
Authorized Distributor
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SI8812DB-T2-E1