IC IC MOSFET SMDType Type SMD Product specification SI9410DY SOP-8 ■ Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜0.03 Ω (VGS = 10V) ● RDS(ON) ＜0.04 Ω (VGS = 5V) ● RDS(ON) ＜0.05 Ω (VGS = 4.5V) D D D D N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G S S ■ Absolute Maximum Ratings Ta = 25℃ Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Parameter TA = 25℃ Continuous Drain Current (TJ = 150 ℃)* ID TA = 70℃ Pulsed Drain Current A IS 2.8 A PD TA = 70℃ t ≤ 10 sec Maximum Junction-to-Ambient* A 30 TA = 25℃ Operating Junction and Storage Temperature Range 5.8 V IDM Continuous Source Current(Diode Conduction) * Maximum Power Dissipation * 7.0 Unit 2.5 1.6 W TJ, Tstg -55 to 150 ℃ RthJA 50 ℃/W * Surface Mounted on 1” x 1” FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC MOSFET SMDType Type SMD Product specification SI9410DY ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Gate Threshold Voltage Test conditions Min Typ Max VGS(th) VDS = VGS, ID = 250 μA Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V 2 VDS = 24 V, VGS = 0 V, TJ = 55℃ 25 On-State Drain Currentb * ID(on) Drain-Source On-State Resistance * rDS(on) VDS ≥ 5 V, VGS = 10 V 1.0 V 30 A 0.030 Ω VGS = 5 V, ID = 4 A 0.030 0.040 Ω VGS = 4.5 V, ID = 3.5 A 0.032 0.050 Ω VDS = 15 V, ID = 7 A 15 Diode Forward Voltageb * VSD IS = 2 A, VGS = 0 V 0.72 1.1 24 50 VDS = 15 V, VGS = 10 V, ID = 7 A 2.8 Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr μA 0.024 gfs Total Gate Charge nA VGS = 10 V, ID = 7 A Forward Transconductanceb * Gate-Source Charge Unit S V nC 4.6 14 30 VDD = 25 V, RL = 25 Ω 10 60 ID = 1 A, VGEN = 10 V, RG = 6 Ω 46 150 17 140 IF = 2 A, di/dt = 100 A/μs 60 ns * Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. ■ Marking Marking 9410 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2