PNP Silicon Switching Transistors SMBT 2907 SMBT 2907 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2222, SMBT 2222 A (NPN) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 2907 SMBT 2907 A s2B s2F Q68000-A6501 Q68000-A6474 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit SMBT 2907 SMBT 2907 A Collector-emitter voltage VCE0 40 Collector-base voltage VCB0 60 Emitter-base voltage VEB0 5 Collector current IC 600 mA Total power dissipation, TS = 77 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg 60 V – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 290 Junction - soldering point Rth JS ≤ 220 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 2907 SMBT 2907 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 40 60 – – – – 60 60 – – – – 5 – – – – – – – – – – 20 10 20 10 nA nA µA µA – – 10 nA 35 75 50 100 75 100 100 100 30 50 – – – – – – – – – – – – – – – – 300 300 – – – – – – 0.4 1.6 – – – – 1.3 2.6 DC characteristics Collector-emitter breakdown voltage IC = 10 mA SMBT 2907 SMBT 2907 A V(BR)CE0 Collector-base breakdown voltage IC = 10 µA SMBT 2907 SMBT 2907 A V(BR)CB0 Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 Collector cutoff current VCB = 50 V VCB = 50 V VCB = 50 V, TA = 150 ˚C VCB = 50 V, TA = 150 ˚C ICB0 SMBT 2907 SMBT 2907 A SMBT 2907 SMBT 2907 A Emitter cutoff current VEB = 3 V DC current gain1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 10 V1) IC = 500 mA, VCE = 10 V1) IEB0 VCEsat Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBEsat Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group – hFE SMBT 2907 SMBT 2907 A SMBT 2907 SMBT 2907 A SMBT 2907 SMBT 2907 A SMBT 2907 SMBT 2907 A SMBT 2907 SMBT 2907 A Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1) V 2 V SMBT 2907 SMBT 2907 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz fT 200 – – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – – 8 pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo – – 30 td tr – – – – 10 40 ns ns tstg tf – – – – 80 30 ns ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA Delay time Rise time VCC = 6 V, IC = 150 mA, IB1 = IB2 = 15 mA Storage time Fall time Test circuits Delay and rise time Semiconductor Group Storage and fall time 3 SMBT 2907 SMBT 2907 A Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB = f (VCB) f = 1 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 20 V Semiconductor Group 4 SMBT SMBT 2907 2907 SMBT SMBT 2907 2907 A A Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 Delay time td = f (IC) Rise time tr = f (IC) hFE = 10 Storage time tstg = f (IC) Fall time tf = f (IC) Semiconductor Group 5 SMBT 2907 SMBT 2907 A DC current gain hFE = f (IC) Semiconductor Group 6