BFN24, BFN26 NPN Silicon High-Voltage Transistors 3 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage 2 Complementary types: BFN25, BFN27 (PNP) 1 Type Marking Pin Configuration BFN24 FHs 1=B 2=E 3=C SOT23 BFN26 FJs 1=B 2=E 3=C SOT23 BFN24 BFN26 VPS05161 Package Maximum Ratings Parameter Symbol Unit Collector-emitter voltage VCEO 250 300 Collector-base voltage VCBO 250 300 Emitter-base voltage VEBO 5 5 DC collector current IC 200 Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 74 °C Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg V mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BFN24, BFN26 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO BFN24 250 - - BFN26 300 - - BFN24 250 - - BFN26 300 - - 5 - - V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IE = 0 V Emitter-base breakdown voltage V(BR)EBO IE = 100 µA, IC = 0 Collector cutoff current ICBO nA VCB = 200 V, IE = 0 BFN24 - - 100 VCB = 250 V, IE = 0 BFN26 - - 100 Collector cutoff current ICBO µA VCB = 200 V, IE = 0 , TA = 150 °C BFN24 - - 20 VCB = 250 V, IE = 0 , TA = 150 °C BFN26 - - 20 - - 100 Emitter cutoff current IEBO nA VEB = 3 V, IC = 0 DC current gain 1) hFE - IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - BFN24 40 - - BFN26 30 - - IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA VCEsat V BFN24 - - 0.4 BFN26 - - 0.5 - - 0.9 Base-emitter saturation voltage 1) VBEsat IC = 20 mA, IB = 2 mA 1) Pulse test: t < 300s; D < 2% 2 Nov-30-2001 BFN24, BFN26 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT - 70 - MHz Ccb - 1.5 - pF AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz 3 Nov-30-2001 BFN24, BFN26 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 10V 10 3 400 BFN 24/26 EHP00622 MHz mW fT P tot 300 250 10 2 200 150 5 100 50 0 0 15 30 45 60 75 90 105 120 10 1 10 0 °C 150 TS 10 1 5 5 10 2 mA 5 ΙC Permissible pulse load Operating range I C = f (VCEO) Ptotmax / PtotDC = f (tp ) TA = 25°C, D = 0 10 3 BFN 24/26 EHP00623 Ptot max 5 Ptot DC 10 3 BFN 24/26 EHP00624 mA tp tp D= T 10 3 ΙC T 10 µs 10 2 10 2 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 100 µs 1 ms 100 ms 10 1 5 500 ms DC 10 0 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 10 0 0 tp 5 10 1 5 10 2 V 5 10 3 V CEO 4 Nov-30-2001 BFN24, BFN26 Collector current IC = f (VBE) Collector cutoff current ICBO = f (T A) VCE = 10V VCB = 200V BFN 24/26 10 3 EHP00625 10 4 nA mA ΙC Ι CB0 10 2 BFN 24/26 EHP00626 max 10 3 5 5 10 2 5 10 1 5 typ 10 1 5 10 0 10 0 5 5 10 -1 0.5 0 V 1.0 10 -1 1.5 V BE 0 50 ˚C 150 100 TA DC current gain hFE = f (IC ) VCE = 10V 10 3 BFN 24/26 EHP00627 5 h FE 2 10 2 5 2 10 1 5 2 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Nov-30-2001