SML20L100 TO–264AA Package Outline. Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) Pin 1 – Gate 5.79 (0.228) 6.20 (0.244) 2.29 (0.090) 2.69 (0.106) 19.81 (0.780) 21.39 (0.842) 25.48 (1.003) 26.49 (1.043) 3.10 (0.122) 3.48 (0.137) 1 2 VDSS 200V 100A ID(cont) RDS(on) 0.022W 3 2.29 (0.090) 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) 0.48 (0.019) 0.84 (0.033) 0.76 (0.030) 1.30 (0.051) 2.59 (0.102) 3.00 (0.118) 5.45 (0.215) BSC 2 plcs. Pin 2 – Drain Pin 3 – Source D • • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–264 Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 200 V ID Continuous Drain Current 100 A IDM Pulsed Drain Current 1 400 A VGS Gate – Source Voltage ±30 VGSM Gate – Source Voltage Transient ±40 Total Power Dissipation @ Tcase = 25°C 520 W Derate Linearly 4.16 W/°C PD –55 to 150 TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. 300 IAR Avalanche Current1 (Repetitive and Non-Repetitive) 100 EAR Repetitive Avalanche Energy 1 50 EAS Single Pulse Avalanche Energy 2 2500 V °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 500µH, RG = 25W, Peak IL = 100A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 6/99 SML20L100 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250mA Zero Gate Voltage Drain Current VDS = VDSS 25 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 250 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 2.5mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Min. 200 Typ. 2 Max. Unit V 100 mA A VGS = 10V , ID = 0.5 ID [Cont.] 0.022 W DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Min. Coss Output Capacitance VDS = 25V 1950 Crss Reverse Transfer Capacitance f = 1MHz 560 Qg Total Gate Charge3 VGS = 10V 290 Qgs Gate – Source Charge VDD = 0.5 VDSS 66 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 120 td(on) Turn–on Delay Time VGS = 15V 16 tr Rise Time VDD = 0.5 VDSS 25 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 48 tf Fall Time RG = 0.6W Typ. 8500 Max. Unit pF nC ns 5 SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. Typ. Max. Unit 100 A 400 1.3 IS = – ID [Cont.] , dls / dt = 100A/ms IS = – ID [Cont.] , dls / dt = 100A/ms V 330 ns 5.8 mC THERMAL CHARACTERISTICS RqJC RqJA Characteristic Junction to Case Min. Junction to Ambient Typ. Max. Unit 0.24 °C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 6/99