SILICON PLANAR EPITAXIAL NPN TRANSISTOR Semelab Limited SMLBFY90 • LOW NOISE TRANSISTOR • FOR USE IN BROAD AND NARROW-BAND AMPLIFIERS UP TO 1GHz ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER VCEO VEBO IC(AV) ICM Ptot Tstg Tj Collector - Base Voltage Collector - Emitter Voltage (RBE ≤ 50Ω) Collector - Emitter Voltage Emitter - Base Voltage Average Collector Current Peak Collector Current (f ≥ 1MHz) Power Dissipation at TA = 25°C Storage Temperature Junction Temperature 30V 30V 15V 2.5V 25mA 50mA 200mW 200°C -65 to +200°C THERMAL PROPERTIES Parameters Min. Typ. Max. Unit RθJA Junction - ambient thermal resistance ≤ 880 °C/W RθJC Junction - case thermal resistance ≤ 580 °C/W * Pulse Test tp = 300μs, δ ≤ 2% (1) Shield Lead (case) not connected (2) Shield Lead (case) grounded Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK. Telephone: +44 (0) 1455 556565 Fax +44 (0) 1455 552612 E-mail: [email protected] SEMELAB Website: http://www.semelab.co.uk A subsidiary of TT electronics plc. Document Number 7861 Issue 2 SILICON PLANAR EPITAXIAL NPN TRANSISTOR Semelab Limited SMLBFY90 ELECTRICAL CHARACTERISTICS ICBO V(BR)CEO* V(BR)CER* h21E (TA = 25°C unless otherwise stated) Parameters Test Conditions Collector Cut Off Current VCB = 15V IE = 0 IC = 10mA IB = 0 Collector Emitter Breakdown Voltage Min. Typ. Max. Unit. 10 nA 15 V Collector Emitter Breakdown Voltage Static Forward Current Transfer Ratio IC = 10mA RBE ≤ 50Ω 30 VCE = 1V VCE = 1V IC = 2mA IC = 25mA 25 150 20 125 - DYNAMIC CHARACTERISTICS Parameters fT Test Conditions Transition Frequency Min. VCE = 5V f = 100MHz IC = 2mA VCE = 5V f = 100MHz IC = 25mA Typ. Max. Unit. 0.6 GHz 1.0 C22b (1) Output Capacitance VCB = 10V f = 1MHz IE = 0 1.5 pF C12e (2) Open Circuit Reverse Transfer Capacitance VCE = 5V f = 1MHz IC = 0 0.8 pF IS21I2 Insertion Gain VCE = 10V f = 200MHz IC = 14mA 10.0 dB Mechanical Data Dimensions in mm (inches) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 2.54 (0.100) Nom. 0.48 (0.019) 0.41 (0.016) dia. 12.7 (0.500) min. 4 3 1 2 TO72 (TO-206AF) Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK. Telephone: +44 (0) 1455 556565 Fax +44 (0) 1455 552612 E-mail: [email protected] Pin 3 - Collector Pin 4 - Connected to Case Website: http://www.semelab.co.uk Document Number 7861 Issue 2