TI SN65HVD31

RHL (QFN)
D-8 (SOIC)
www.ti.com
D-14 (SOIC)
SN65HVD30 – SN65HVD39
SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
3.3 V FULL-DUPLEX RS-485 DRIVERS AND RECEIVERS
FEATURES
1
•
•
•
•
•
•
•
•
•
•
(1)
1/8 Unit-Load Option Available (Up to
256 Nodes on the Bus)
Bus-Pin ESD Protection Exceeds 15 kV HBM
Optional Driver Output Transition Times for
Signaling Rates(1) of 1 Mbps, 5 Mbps and
26 Mbps
Low-Current Standby Mode: < 1 µA
Glitch-Free Power-Up and Power-Down
Protection for Hot-Plugging Applications
5-V Tolerant Inputs
Bus Idle, Open, and Short Circuit Failsafe
Driver Current Limiting and Thermal Shutdown
Meets or Exceeds the Requirements of ANSI
TIA/EIA-485-A and RS-422 Compatible
5-V Devices available, SN65HVD50-59
Line Signaling Rate is the number of voltage transitions made
per second expressed in units of bps (bits per second).
APPLICATIONS
•
•
•
•
Utility Meters
DTE/DCE Interfaces
Industrial, Process, and Building Automation
Point-of-Sale (POS) Terminals and Networks
DESCRIPTION
Each driver and receiver has separate input and
output pins for full-duplex bus communication
designs. They are designed for balanced
transmission lines and inter-operation with ANSI
TIA/EIA-485A, TIA/EIA-422-B, ITU-T v.11 and ISO
8482:1993 standard-compliant devices.
The SN65HVD30, SN65HVD31, SN65HVD32,
SN65HVD36 and SN65HVD37 are fully enabled with
no external enabling pins.
The SN65HVD33, SN65HVD34, SN65HVD35,
SN65HVD38, and SN65HVD39 have active-high
driver enables and active-low receiver enables. A low,
less than 1µA, standby current can be achieved by
disabling both the driver and receiver.
All devices are characterized for ambient
temperatures from –40°C to 85°C. Low power
dissipation allows operation at temperatures up to
105°C or 125°C, depending on package option.
The preview devices SN65HVD36 and SN65HVD38
implement receiver equalization technology for
improved jitter performance on differential bus
applications with data rates up to 20 Mbps at cable
lengths up to 160 meters.
The preview devices SN65HVD37 and SN65HVD39
implement receiver equalization technology for
improved jitter performance on differential bus
applications with data rates in the range of 1 to 5
Mbps at cable lengths up to 1000 meters.
The SN65HVD3X devices are 3-state differential line
drivers and differential-input line receivers that
operate with 3.3-V power supply.
IMPROVED REPLACEMENT FOR:
Part Number
Replace with
xxx3491
xxx3490
SN65HVD33:
SN65HVD30:
Better ESD protection (15kV vs 2kV or not specified) Higher Signaling Rate (26Mbps vs 20Mbps)
Fractional Unit Load (64 Nodes vs 32)
MAX3491E
MAX3490E
SN65HVD33:
SN65HVD30:
Higher Signaling Rate (26Mbps vs 12Mbps) Fractional Unit Load (64 Nodes vs 32)
MAX3076E
MAX3077E
SN65HVD33:
SN65HVD30:
Higher Signaling Rate (26Mbps vs 16Mbps) Lower Standby Current (1 µA vs 10 µA)
MAX3073E
MAX3074E
SN65HVD34:
SN65HVD31:
Higher Signaling Rate (5Mbps vs 500kbps) Lower Standby Current (1 µA vs 10 µA)
MAX3070E
MAX3071E
SN65HVD35:
SN65HVD32:
Higher Signaling Rate (1Mbps vs 250kbps) Lower Standby Current (1 µA vs 10 µA)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
UNLESS OTHERWISE NOTED this document contains
PRODUCTION DATA information current as of publication date.
Products conform to specifications per the terms of Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2008, Texas Instruments Incorporated
SN65HVD30 – SN65HVD39
www.ti.com
SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
SN65HVD30, SN65HVD31, SN65HVD32,
SN65HVD36, SN65HVD37
SN65HVD33, SN65HVD34, SN65HVD35,
SN65HVD38, SN65HVD39
D PACKAGE (TOP VIEW)
VCC
R
D
GND
R
D
1
8
2
7
3
6
4
5
8
2
A
7
1
14
2
13
3
12
4
11
5
10
6
9
7
8
VCC
VCC
A
B
Z
Y
NC
NC - No internal connection
B
5
3
NC
R
RE
DE
D
GND
GND
A
B
Z
Y
Y
6
Z
SN65HVD33
RHL PACKAGE (TOP VIEW)
VCC
NC
2
1
VCC
20
19
NC
R
3
18
A
RE
4
17
B
NC
5
16
NC
DE
6
15
Z
D
7
14
Y
NC
8
13
NC
NC
9
12
NC
10
11
GND
GND
R
RE
DE
D
18
3
17
4
A
B
6
14
7
15
Y
Z
NC - No internal connection
2
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
AVAILABLE OPTIONS
SIGNALING
RATE
UNIT LOADS
RECEIVER
EQUALIZATION
ENABLES
BASE
PART NUMBER
SOIC MARKING
26 Mbps
No
No
SN65HVD30
VP30
5 Mbps
1/8
No
No
SN65HVD31
VP31
1 Mbps
1/8
No
No
SN65HVD32
VP32
26 Mbps
No
Yes
SN65HVD33
65HVD33
5 Mbps
1/8
No
Yes
SN65HVD34
65HVD34
1 Mbps
1/8
No
Yes
SN65HVD35
65HVD35
Yes
No
SN65HVD36
PREVIEW
Yes
No
SN65HVD37
PREVIEW
Yes
Yes
SN65HVD38
PREVIEW
Yes
Yes
SN65HVD39
PREVIEW
26 Mbps
5 Mbps
1/8
26 Mbps
5 Mbps
1/8
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted (1)
(2)
UNIT
VCC
Supply voltage range
–0.3 V to 6 V
V(A), V(B), V(Y), V(Z)
Voltage range at any bus terminal (A, B, Y, Z)
–9 V to 14 V
V(TRANS)
Voltage input, transient pulse through 100 Ω. See Figure 12 (A, B, Y, Z) (3)
–50 to 50 V
VI
Input voltage range (D, DE, RE)
PD(cont)
Continuous total power dissipation
IO
Output current (receiver output only, R)
(1)
(2)
(3)
(4)
-0.5 V to 7 V
Internally limited (4)
11 mA
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
This tests survivability only and the output state of the receiver is not specified.
The thermal shutdown protection circuit internally limits the continuous total power dissipation. Thermal shutdown typically occurs when
the junction temperature reaches 165°C.
DISSIPATION RATINGS
PACKAGE
SOIC (D) 8 pin
SOIC (D) 14 pin
QFN (RHL) 20 pin
JEDEC THERMAL
MODEL
TA < 25°C
RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 85°C
RATING
Low k
625 mW
5 mW/°C
325 mW
High k
1000 mW
8 mW/°C
520 mW
360 mW
Low k
765 mW
6.1 mW/°C
400 mW
275 mW
High k
1350 mW
10.8 mW/°C
705 mW
485 mW
270 mW
High k
1710 mW
13.7 mW/°C
890 mW
6150 mW
340 mW
Copyright © 2005–2008, Texas Instruments Incorporated
Product Folder Link(s) :SN65HVD30 – SN65HVD39
TA = 105°C
RATING
TA = 125°C
RATING
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3
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range unless otherwise noted
MIN
VCC
Supply voltage
VI or VIC
Voltage at any bus terminal (separately or common mode)
1/tUI
Signaling rate
NOM
MAX
3
3.6
–7 (1)
12
SN65HVD30, SN65HVD33, SN65HVD36, SN65HVD38
26
SN65HVD31, SN65HVD34, SN65HVD37, SN65HVD39
5
SN65HVD32, SN65HVD35
1
Differential load resistance
VIH
High-level input voltage
D, DE, RE
2
VCC
VIL
Low-level input voltage
D, DE, RE
0
0.8
VID
Differential input voltage
–12
12
High-level output current
IOL
Low-level output current
TJ
Junction temperature
(1)
Driver
60
–60
Receiver
V
Mbps
Ω
RL
IOH
54
UNIT
V
mA
–8
Driver
60
Receiver
8
–40
150
mA
°C
The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet.
ELECTROSTATIC DISCHARGE PROTECTION
PARAMETER
Human body model
Bus terminals and GND
Human body model (2)
Charged-device-model
(1)
(2)
(3)
4
MIN TYP (1)
TEST CONDITIONS
(3)
MAX
UNIT
±16
All pins
±4
All pins
±1
kV
All typical values at 25°C with 3.3-V supply.
Tested in accordance with JEDEC Standard 22, Test Method A114-A.
Tested in accordance with JEDEC Standard 22, Test Method C101.
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
DRIVER ELECTRICAL CHARACTERISTICS
over recommended operating conditions unless otherwise noted
PARAMETER
VI(K)
|VOD(SS)|
TEST CONDITIONS
Input clamp voltage
II = –18 mA
Steady-state differential output voltage
2.5
RL = 54 Ω, See Figure 1 (RS-485)
1.5
2
2
2.3
RL = 100 Ω, See Figure 1 , (2) (RS-422)
Change in magnitude of steady-state
differential output voltage between
states
RL = 54 Ω, See Figure 1 and Figure 2
VOD(RING)
Differential Output Voltage overshoot
and undershoot
RL = 54 Ω, CL = 50 pF, See Figure 5 and
Figure 3
VOC(PP)
Peak-to-peak
common-mode
output voltage
ΔVOC(SS)
Change in steady-state common-mode
output voltage
HVD30, HVD31,
HVD32, HVD36,
HVD37
IZ(Z) or
IY(Z)
High-impedance
state output current
HVD33, HVD34,
HVD35, HVD38,
HVD39
IZ(S) or
IY(S)
Short Circuit output Current
II
Input current
C(OD)
Differential output capacitance
(1)
(2)
(3)
VCC
V
1.5
–0.2
HVD30, HVD33,
HVD36, HVD38
Steady-state common-mode output
voltage
UNIT
V
IO = 0
Δ|VOD(SS)|
HVD31, HVD34,
HVD37, HVD39,
HVD32, HVD35
MAX
–1.5
Vtest = –7 V to 12 V, See Figure 2
VOC(SS)
MIN TYP (1)
0.2
V
10% (3)
V
0.5
See Figure 4
V
0.25
1.6
2.3
–0.05
0.05
See Figure 4
V
VCC = 0 V, VZ or VY = 12 V,
Other input at 0 V
90
VCC = 0 V, VZ or VY = –7 V,
Other input at 0 V
VCC = 3 V or 0 V, DE = 0 V
VZ or VY = 12 V
VCC = 3 V or 0 V, DE = 0 V
VZ or VY = –7 V
VZ or VY = –7 V
VZ or VY = 12 V
–10
µA
Other input
at 0 V
Other input
at 0 V
D, DE
VOD = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V
90
–10
–250
250
–250
250
0
100
16
mA
µA
pF
All typical values are at 25°C and with a 3.3-V supply.
VCC is 3.3 Vdc ± 5%
10% of the peak-to-peak differential output voltage swing, per TIA/EIA-485
Copyright © 2005–2008, Texas Instruments Incorporated
Product Folder Link(s) :SN65HVD30 – SN65HVD39
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
DRIVER SWITCHING CHARACTERISTICS
over recommended operating conditions unless otherwise noted
PARAMETER
Propagation delay time,
low-to-high-level output
tPLH
TEST CONDITIONS
HVD30, HVD33, HVD36, HVD38
4
10
18
HVD31, HVD34, HVD37, HVD39
25
38
65
HVD32, HVD35
Propagation delay time,
high-to-low-level output
tPHL
Differential output signal rise
time
tr
Differential output signal fall
time
tf
120
175
305
HVD30, HVD33, HVD36, HVD38
4
9
18
HVD31, HVD34, HVD37, HVD39
25
38
65
HVD32, HVD35
120
175
305
HVD30, HVD33, HVD36, HVD38
2.5
5
12
20
37
60
HVD32, HVD35
120
185
300
HVD30, HVD33, HVD36, HVD38
2.5
5
12
HVD31, HVD34, HVD37, HVD39
20
35
60
120
180
300
HVD31, HVD34, HVD37, HVD39
RL = 54 Ω, CL = 50 pF,
See Figure 5
HVD32, HVD35
tsk(p)
tPZH1
tPZL1
Propagation delay time,
high-impedance-to-low-level
output
Propagation delay time,
low-level-to-high-impedance
output
tPLZ
tPZH2
tPZL2
6
Propagation delay time,
high-impedance-to-high-level
output
Propagation delay time,
high-level-to-high-impedance
output
tPHZ
(1)
Pulse skew (|tPHL – tPLH|)
MIN TYP (1) MAX
HVD30, HVD33, HVD36, HVD38
0.6
HVD31, HVD34, HVD37, HVD39
2.0
HVD32, HVD35
5.1
45
HVD34, HVD39
235
HVD33, HVD38
HVD34, HVD39
RL = 110 Ω, RE at 0 V,
D = 3 V and S1 = Y, or
D = 0 V and S1 = Z
See Figure 6
HVD35
HVD35
HVD33, HVD38
HVD34, HVD39
ns
ns
ns
ns
490
25
65
ns
165
HVD33, HVD38
HVD34, HVD39
ns
ns
HVD33, HVD38
HVD35
UNIT
35
RL = 110 Ω, RE at 0 V,
D = 3 V and S1 = Z, or
D = 0 V and S1 = Y
See Figure 7
HVD35
190
ns
490
30
120
ns
290
Propagation delay time, standby-to-high-level output
RL = 110 Ω, RE at 3 V,
D = 3 V and S1 = Y, or
D = 0 V and S1 = Z
See Figure 6
4000
ns
Propagation delay time, standby-to-low-level output
RL = 110 Ω, RE at 3 V,
D = 3 V and S1 = Z, or
D = 0 V and S1 = Y
See Figure 7
4000
ns
All typical values are at 25°C and with a 3.3-V supply.
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
RECEIVER ELECTRICAL CHARACTERISTICS
over recommended operating conditions unless otherwise noted
PARAMETER
VIT+
Positive-going differential input threshold
voltage
IO = –8 mA
VIT-
Negative-going differential input threshold
voltage
IO = 8 mA
Vhys
Hysteresis voltage (VIT+ - VIT-)
VIK
Enable-input clamp voltage
Output voltage
IO(Z)
High-impedance-state output current
V
II = –18 mA
V
2.4
0.4
VO = 0 or VCC, RE at VCC
–1
1
VA or VB = 12 V
0.05
0.1
VA or VB = 12 V, VCC = 0 V
0.06
0.1
VA or VB = -7 V
Other input at
0V
VA or VB = -7 V, VCC = 0 V
HVD30, HVD33,
HVD36, HVD38
mV
–1.5
VID = –200 mV, IO = 8 mA, See Figure 8
Bus input current
UNIT
–0.20
50
HVD31, HVD32,
HVD34, HVD35,
HVD37, HVD39
–0.10
–0.04
–0.10
–0.03
VA or VB = 12 V
0.20
0.35
VA or VB = 12 V, VCC = 0 V
0.24
0.4
VA or VB = -7 V
Other input at
0V
VA or VB = -7 V, VCC = 0 V
IIH
Input current, RE
VIH = 0.8 V or 2 V
CID
Differential input capacitance
VID = 0.4 sin (4E6πt) + 0.5 V, DE at 0 V
(1)
MAX
–0.02
VID = 200 mV, IO = –8 mA, See Figure 8
VO
IA or
IB
MIN TYP (1)
TEST CONDITIONS
–0.35
–0.18
–0.25
–0.13
V
µA
mA
mA
µA
–60
15
pF
All typical values are at 25°C and with a 3.3-V supply.
SUPPLY CURRENT CHARACTERISTICS
over recommended operating conditions unless otherwise noted
PARAMETER
MIN TYP (1)
TEST CONDITIONS
HVD30
D at 0 V or VCC and No Load
6.4
HVD36, HVD37
mA
7.9
HVD33
1.8
RE at 0 V, D at 0 V or VCC, DE at 0 V,
No load (Receiver enabled and driver disabled)
HVD34, HVD35
2.2
HVD38, HVD39
mA
3.8
HVD33, HVD34, HVD35,
HVD38, HVD39
Supply current
RE at VCC, D at VCC, DE at 0 V,
No load (Receiver disabled and driver
disabled)
0.022
HVD33
1
µA
2.1
HVD34, HVD35
RE at 0 V, D at 0 V or VCC, DE at VCC,
No load (Receiver enabled and driver enabled)
HVD38
6.5
3.5
HVD39
8
HVD33
1.8
HVD34, HVD35
RE at VCC, D at 0 V or VCC, DE at VCC
No load (Receiver disabled and driver enabled)
HVD38
HVD39
(1)
UNIT
2.1
HVD31, HVD32
ICC
MAX
mA
6.2
2.5
7
All typical values are at 25°C and with a 3.3-V supply.
Copyright © 2005–2008, Texas Instruments Incorporated
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
RECEIVER SWITCHING CHARACTERISTICS
over recommended operating conditions unless otherwise noted
MIN TYP (1)
MAX
HVD30, HVD33, HVD36, HVD38
26
45
HVD31, HVD32, HVD34, HVD35,
HVD37, HVD39
47
70
HVD30, HVD33, HVD36, HVD38
29
45
49
70
PARAMETER
tPLH
Propagation delay time,
low-to-high-level output
tPHL
Propagation delay time,
high-to-low-level output
tsk(p)
Pulse skew (|tPHL – tPLH|)
TEST CONDITIONS
HVD31, HVD32, HVD34, HVD35,
HVD37, HVD39
HVD30, HVD33, HVD36, HVD37,
HVD38, HVD39
VID = -1.5 V to 1.5 V,
CL = 15 pF, See Figure 9
7
HVD31, HVD34, HVD32, HVD35
tr
Output signal rise time
tf
Output signal fall time
tPHZ
Output disable time from high level
tPZH1
Output enable time to high level
tPZH2
Propagation delay time, standby-to-high-level output
tPLZ
Output disable time from low level
tPZL1
Output enable time to low level
tPZL2
Propagation delay time, standby-to-low-level output
(1)
UNIT
10
5
ns
6
20
DE at 3 V
CL = 15 pF,
See Figure 10
20
DE at 0 V
4000
20
DE at 3 V
CL = 15 pF,
See Figure 11
20
DE at 0 V
4000
All typical values are at 25°C and with a 3.3-V supply
RECEIVER EQUALIZATION CHARACTERISTICS
over recommended operating conditions unless otherwise noted
PARAMETER
TEST CONDITIONS
DEVICE
0m
100 m
25 Mbps
150 m
200 m
200 m
tj(pp)
Peak-to-peak
eye-pattern jitter
Pseudo-random NRZ code
with a bit pattern length of
216–1, Belden 3105A cable
10 Mbps
250 m
300 m
5 Mbps
3 Mbps
1 Mbps
(1)
(2)
8
500 m
500 m
1000 m
MIN
TYP (1)
HVD36, HVD38
PREVIEW
HVD33 (2)
PREVIEW
HVD36, HVD38
PREVIEW
HVD33
(2)
PREVIEW
HVD33 (2)
PREVIEW
HVD36, HVD38
PREVIEW
HVD33 (2)
PREVIEW
HVD36, HVD38
PREVIEW
HVD33 (2)
PREVIEW
HVD36, HVD38
PREVIEW
HVD33 (2)
PREVIEW
HVD36, HVD38
PREVIEW
(2)
ns
PREVIEW
HVD37, HVD39
PREVIEW
HVD33 (2)
PREVIEW
(2)
PREVIEW
HVD34
UNIT
PREVIEW
HVD36, HVD38
HVD34
MAX
HVD36, HVD38
PREVIEW
HVD37, HVD39
PREVIEW
HVD34 (2)
PREVIEW
HVD37, HVD39
PREVIEW
All typical values are at VCC = 5 V, and temperature = 25°C.
The HVD33 and the HVD34 do not have receiver equalization but are specified for comparison.
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
DEVICE POWER DISSIPATION – PD
PARAMETER
TEST CONDITIONS
SOIC-8
θJA
θJB
Junction-to-Ambient Thermal Resistance
SOIC-14
Junction-to- Board Thermal Resistance
VALUE
JEDEC Low-K model
231
JEDEC High-K model
135
JEDEC Low-K model
163
JEDEC High-K model
92
QFN-20
73
SOIC-8
44
SOIC-14
61
UNITS
°C/W
°C/W
QFN-20
θJC
Junction-to-Case Thermal Resistance
SOIC-8
43
SOIC-14
59
QFN-20
PD
Power Dissipation
Driver and receiver enabled, 50% duty cycle
square-wave signal at signaling rate:
HVD30,33 at 25 Mbps,
HVD31,34 at 5 Mbps,
HVD32,35 at 1 Mbps
HVD30,33
Typical
HVD31,34
HVD32,35
HVD30,33
Worst-case
HVD31,34
HVD32,35
TSD
°C/W
14
VCC = 3.3V, TJ = 25°C, RL = 60 Ω,
CL = 50 pF (driver),
CL = 15 pF (receiver)
VCC = 3.6V, TJ = 140°C, RL = 54
Ω, CL = 50 pF (driver),
CL = 15 pF (receiver)
Thermal Shut-down Junction Temperature
Copyright © 2005–2008, Texas Instruments Incorporated
Product Folder Link(s) :SN65HVD30 – SN65HVD39
mW
197
213
mW
248
170
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°C
9
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
PARAMETER MEASUREMENT INFORMATION
VCC
DE
II
IY
Y
VOD
0 or 3 V
Z
RL
IZ
VI
VZ
VY
Figure 1. Driver VOD Test Circuit and Voltage and Current Definitions
375 Ω ±1%
VCC
DE
D
Y
VOD
0 or 3 V
60 Ω ±1%
+
_ −7 V < V(test) < 12 V
Z
375 Ω ±1%
Figure 2. Driver VOD With Common-Mode Loading Test Circuit
VOD(SS)
VOD(RING)
0 V Differential
VOD(RING)
-VOD(SS)
Figure 3. VOD(RING) Waveform and Definitions
VOD(RING) is measured at four points on the output waveform, corresponding to overshoot and undershoot from
the VOD(H) and VOD(L) steady state values.
VCC
DE
Input
D
27 Ω ± 1%
Y
Y
VY
Z
VZ
VOC(PP)
Z
27 Ω ± 1%
CL = 50 pF ±20%
VOC
∆VOC(SS)
VOC
CL Includes Fixture and
Instrumentation Capacitance
Input: PRR = 500 kHz, 50% Duty Cycle,t r <6ns, t f <6ns, ZO = 50 Ω
Figure 4. Test Circuit and Definitions for the Driver Common-Mode Output Voltage
10
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
PARAMETER MEASUREMENT INFORMATION (continued)
Y
W
»
W
Z
»
W
Figure 5. Driver Switching Test Circuit and Voltage Waveforms
D
3V
0V
3V
S1
Y
Z
Y
VI
S1
D
VO
Z
1.5 V
1.5 V
0.5 V
t PZH(1 & 2)
0V
V OH
DE
Input
Generator
VI
RL = 110 W
±1%
CL = 50 pF
±20%
50 W
VO
2.3 V
~0V
tPHZ
Generator: PRR = 50 kHz, 50% Duty Cycle, tr < 6 ns, tf < 6 ns, Z 0 = 50 W
CL Includes Fixture and Instrumentation Capacitance
Figure 6. Driver High-Level Output Enable and Disable Time Test Circuit and Voltage Waveforms
D
3V
0V
VCC
S1
Z
Y
Y
D
VI
S1
3V
VI
1.5 V
1.5 V
VO
DE
Input
Generator
RL = 110 Ω
± 1%
0V
Z
t PZL(1&2)
t PLZ
VCC
CL = 50 pF ±20%
50 Ω
0.5 V
VO
2.3 V
VOL
Generator: PRR = 50 kHz, 50% Duty Cycle, tr < 6 ns, tf < 6 ns, Z 0 = 50 W
CL Includes Fixture and Instrumentation Capacitance
Figure 7. Driver Low-Level Output Enable and Disable Time Test Circuit and Voltage Waveforms
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
PARAMETER MEASUREMENT INFORMATION (continued)
IA
VIC
VA + VB
A
IO
R
VA
VID
B
VB
IB
2
VO
RE
II
VI
Figure 8. Receiver Voltage and Current Definitions
A
R
Input
Generator
VI
50 Ω
1.5 V
B
0V
3V
VO
RE
1.5 V
VI
1.5 V
0V
CL = 15 pF
±20%
t PLH
VO
CL Includes Fixture and Instrumentation Capacitance
Generator: PRR = 500 kHz, 50% Duty Cycle, t r <6 ns, t f <6 ns, Zo = 50 Ω
t PHL
90% 90%
1.5 V
10%
tr
VOH
1.5 V
10% V
OL
tf
Figure 9. Receiver Switching Test Circuit and Voltage Waveforms
1.5 V
V CC
A
R
0V
B
VI
1 k W ±1%
3V
A
S1
VI
C L = 15 pF
±20%
RE
Input
Generator
VO
1.5V
1.5V
B
0V
t PHZ
t PZH(1 & 2)
V OH
50 W
C L Includes Fixture and
Instrumentation Capacitance
1.5 V
VO
0.5V
~0 V
Generator: PRR = 50 kHz, 50% Duty Cycle, tr < 6 ns, tf < 6 ns, Z 0 = 50 W
Figure 10. Receiver High-Level Enable and Disable Time Test Circuit and Voltage Waveforms
0V
V CC
A
R
1.5 V
B
RE
Input
VI
Generator
V O 1 k W ±1%
S1
C L = 15 pF
±20%
50 W
C L Includes Fixture
and Instrumentation
Capacitance
3V
A
VI
1.5V
1.5V
0V
B
tPZL(1 & 2)
tPLZ
1.5 V
VO
V CC
0.5V
V OL
Generator: PRR = 50 kHz, 50% Duty Cycle, tr < 6 ns, tf < 6 ns, Z 0 = 50 W
Figure 11. Receiver Enable Time From Standby (Driver Disabled)
12
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
PARAMETER MEASUREMENT INFORMATION (continued)
0 V or 3 V
DE
A
Y
D
R
Z
100 W
±1%
+
-
Pulse Generator
15 ms duration
1% Duty Cycle
tr, tf £ 100 ns
100 W
±1%
B
RE
0 V or 3 V
+
-
Figure 12. Test Circuit, Transient Over Voltage Test
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
DEVICE INFORMATION
LOW-POWER STANDBY MODE
When both the driver and receiver are disabled (DE low and RE high) the device is in standby mode. If the
enable inputs are in this state for less than 60 ns, the device does not enter standby mode. This guards against
inadvertently entering standby mode during driver/receiver enabling. Only when the enable inputs are held in this
state for 300 ns or more, the device is assured to be in standby mode. In this low-power standby mode, most
internal circuitry is powered down, and the supply current is typically less than 1 nA. When either the driver or the
receiver is re-enabled, the internal circuitry becomes active.
12
R
RE
2
11
A
B
3
Low-Power
Standby
DE
4
9
D
5
10
Y
Z
Figure 13. Low-Power Standby Logic Diagram
If only the driver is re-enabled (DE transitions to high) the driver outputs are driven according to the D input after
the enable times given by tPZH2 and tPZL2 in the driver switching characteristics. If the D input is open when the
driver is enabled, the driver outputs defaults to A high and B low, in accordance with the driver failsafe feature.
If only the receiver is re-enabled (RE transitions to low) the receiver output is driven according to the state of the
bus inputs (A and B) after the enable times given by tPZH2 and tPZL2 in the receiver switching characteristics. If
there is no valid state on the bus the receiver responds as described in the failsafe operation section.
If both the receiver and driver are re-enabled simultaneously, the receiver output is driven according to the state
of the bus inputs (A and B) and the driver output is driven according to the D input. Note that the state of the
active driver affects the inputs to the receiver. Therefore, the receiver outputs are valid as soon as the driver
outputs are valid.
14
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
FUNCTION TABLES
SN65HVD33, SN65HVD34, SN65HVD35, SN65HVD38,
SN65HVD39 DRIVER
INPUTS
OUTPUTS
D
DE
Y
H
H
H
Z
L
L
H
L
H
X
L or open
Z
Z
Open
H
L
H
SN65HVD33, SN65HVD34, SN65HVD35, SN65HVD38,
SN65HVD39 RECEIVER
DIFFERENTIAL INPUTS
VID = V(A) - V(B)
ENABLE
RE
OUTPUT
R
VID ≤ −0.2 V
L
L
−0.2 V < VID < −0.02 V
L
?
−0.02 V ≤ VID
L
H
X
H or open
Z
Open Circuit
L
H
Idle circuit
L
H
Short Circuit, V(A) = V(B)
L
H
SN65HVD30, SN65HVD31, SN65HVD32, SN65HVD36,
SN65HVD37 DRIVER
OUTPUTS
INPUT
D
Y
Z
H
H
L
L
L
H
Open
L
H
SN65HVD30, SN65HVD31, SN65HVD32, SN65HVD36,
SN65HVD37 RECEIVER
DIFFERENTIAL INPUTS
VID = V(A) - V(B)
OUTPUT
R
VID ≤ −0.2 V
L
−0.2 V < VID < −0.02 V
?
−0.02 V ≤ VID
H
Open Circuit
H
Idle circuit
H
Short Circuit, V(A) = V(B)
H
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS
D and DE Input
RE Input
VCC
VCC
130 kW
Input
470 W
Input
470 W
9V
9V
125 kW
A Input
B Input
VCC
VCC
R1
22 V
R1
22 V
R3
R3
Input
Input
22 V
R2
22 V
R2
R Output
Y and Z Outputs
VCC
VCC
16 V
5W
Output
16 V
16
9V
R1/R2
R3
SN65HVD30, SN65HVD33, SN65HVD36, SN65HVD38
9 kΩ
45 kΩ
SN65HVD31, SN65HVD32, SN65HVD34, SN65HVD35 SN65HVD37,
SN65HVD38, SN65HVD39
36 kΩ
180 kΩ
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Output
Copyright © 2005–2008, Texas Instruments Incorporated
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
TYPICAL CHARACTERISTICS
HVD30, HVD33
RMS SUPPLY CURRENT
vs
SIGNALING RATE
HVD31, HVD34
RMS SUPPLY CURRENT
vs
SIGNALING RATE
55
60
TA =25°C RL = 54 W
RE = VCC CL = 50 pF
DE = VCC
55
ICC - RMS Supply Current - mA
50
ICC - RMS Supply Current - mA
TA =25°C RL = 54 W
RE = VCC CL = 50 pF
DE = VCC
45
VCC = 3.3 V
40
35
50
VCC = 3.3 V
45
40
35
30
30
0
5
10
15
20
25
0
1
2
3
Signaling Rate - Mbps
Signaling Rate - Mbps
Figure 14.
Figure 15.
4
5
HVD32, HVD35
RMS SUPPLY CURRENT
vs
SIGNALING RATE
60
TA =25°C RL = 54 W
RE = VCC CL = 50 pF
DE = VCC
ICC - RMS Supply Current - mA
55
50
VCC = 3.3 V
45
40
35
30
0
0.2
0.4
0.6
0.8
1
Signaling Rate - Mbps
Figure 16.
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
TYPICAL CHARACTERISTICS (continued)
HVD30, HVD33
BUS INPUT CURRENT
vs
INPUT VOLTAGE
HVD31, HVD32, HVD34, HVD35
BUS INPUT CURRENT
vs
INPUT VOLTAGE
250
60
TA = 25°C
RE = 0 V
DE = 0 V
200
TA = 25°C
RE = 0 V
DE = 0 V
40
100
II - Bus Input Current - uA
II - Bus Input Current - uA
150
50
VCC = 3.3 V
0
-50
-100
20
0
VCC = 3.3 V
-20
-40
-150
-200
-60
-7
-4
-1
2
5
8
11
-7
14
-4
-1
VI - Bus Input Voltage - V
8
11
Figure 18.
DRIVER LOW-LEVEL OUTPUT CURRENT
vs
LOW-LEVEL OUTPUT VOLTAGE
DRIVER HIGH-LEVEL OUTPUT CURRENT
vs
HIGH-LEVEL OUTPUT VOLTAGE
14
0.01
VCC = 3.3 V
DE = VCC
D=0V
0.12
VCC = 3.3 V
DE = VCC
D=0V
-0.01
0.1
IOH - High-level Output Current - A
IOL - Low-level Output Current - A
5
Figure 17.
0.14
0.08
0.06
0.04
0.02
0
-0.02
-0.03
-0.05
-0.07
-0.09
-0.11
-0.13
0
0.5
1
1.5
2
2.5
VOL - Low-Level Output Voltage - V
3
3.5
0
0.5
1
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1.5
2
2.5
3
3.5
VOH - High-Level Output Voltage - V
Figure 19.
18
2
VI - Bus Input Voltage - V
Figure 20.
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
TYPICAL CHARACTERISTICS (continued)
DRIVER DIFFERENTIAL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
DRIVER OUTPUT CURRENT
vs
SUPPLY VOLTAGE
2.5
40
TA = 25°C
RL = 54 W
D = VCC
DE = VCC
2.4
3.6 V
35
RL = 60 W
IO - Driver Output Current - mA
VOD - Differential Output Voltage - V
2.3
2.2
3.3 V
2.1
2
1.9
3V
1.8
30
25
20
15
10
1.7
5
1.6
1.5
0
-60
-40
-20
0
20
40
60
80 90
0
0.5
1
1.5
2
2.5
TA − Free-Air Temperature − oC
VCC Supply Voltage - V
Figure 21.
Figure 22.
HVD30, HVD33
DRIVER PROPAGATION DELAY
vs
FREE-AIR TEMPERATURE
HVD30, HVD33
DRIVER RISE/FALL TIME
vs
FREE-AIR TEMPERATURE
3
3.5
5
14
13
4.5
Driver Rise/Fall Time - ns
Driver Propagation Delay - ns
12
3V
11
3.6 V
10
9
3V
4
3.6 V
3.5
3
8
2.5
7
2
6
-60
-40
-20
0
20
40
TA − Free-Air Temperature − oC
60
80 90
-60
-40
-20
0
20
40
60
80 90
o
TA − Free-Air Temperature − C
Figure 23.
Figure 24.
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
TYPICAL CHARACTERISTICS (continued)
RECEIVER THRESHOLD
vs
COMMON-MODE VOLTAGE
0.00
0.00
−0.02
−0.02
−0.04
−0.04
VIT+
−0.06
Receiver Threshold − V
Receiver Threshold − V
RECEIVER THRESHOLD
vs
AMBIENT TEMPERATURE
−0.08
−0.10
VIT−
−0.12
−0.14
−0.08
−0.10
−0.14
−0.16
−0.18
−0.18
−25
0
25
50
75
100
VIT−
−0.12
−0.16
−0.20
−50
VIT+
−0.06
−0.20
−7
125
TA − Ambient Temperature − °C
−5
−3
3
5
7
9
Figure 26.
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
ENABLE TIME
vs
COMMON-MODE VOLTAGE (SEE Figure 29)
1.4
800
1.2
700
11
HVD35
600
1
3V
Enable Time − ns
ICC - Supply Current - mA
1
Figure 25.
3.6 V
0.8
0.6
500
HVD34
400
300
0.4
Static,
No Load
200
HVD33
0.2
0
-60
100
0
-40
-20
0
20
40
60
80 90
-7
-2
3
8
TA − Free-Air Temperature − C
V(TEST) − Common-Mode Voltage − V
Figure 27.
Figure 28.
o
20
−1
VCM − Common-Mode Voltage − V
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SLLS665E – SEPTEMBER 2005 – REVISED MARCH 2008
TYPICAL CHARACTERISTICS (continued)
375 W ± 1%
Y
D
0 or 3 V
-7 V < V(TEST) < 12 V
VOD
60 W
± 1%
Z
DE
375 W ± 1%
Input
Generator
V
50 W
50%
tpZH(diff)
VOD (high)
1.5 V
0V
tpZL(diff)
-1.5 V
VOD (low)
Figure 29. Driver Enable Time From DE to VOD
The time tpZL(x) is the measure from DE to VOD(x). VOD is valid when it is greater than 1.5 V.
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PACKAGE OPTION ADDENDUM
www.ti.com
12-Feb-2008
PACKAGING INFORMATION
(1)
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
SN65HVD30D
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD30DG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD30DR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD30DRG4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD31D
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD31DG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD31DR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD31DRG4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD32D
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD32DG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD32DR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD32DRG4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD33D
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD33DG4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD33DR
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD33DRG4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD34D
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD34DG4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD34DR
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD34DRG4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD35D
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD35DG4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD35DR
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SN65HVD35DRG4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
The marketing status values are defined as follows:
Addendum-Page 1
Lead/Ball Finish
MSL Peak Temp (3)
PACKAGE OPTION ADDENDUM
www.ti.com
12-Feb-2008
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
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incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
SN65HVD30DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
SN65HVD31DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
SN65HVD32DR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
SN65HVD33DR
SOIC
D
14
2500
330.0
16.4
6.5
9.0
2.1
8.0
16.0
Q1
SN65HVD34DR
SOIC
D
14
2500
330.0
16.4
6.5
9.0
2.1
8.0
16.0
Q1
SN65HVD35DR
SOIC
D
14
2500
330.0
16.4
6.5
9.0
2.1
8.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
SN65HVD30DR
SOIC
D
8
2500
346.0
346.0
29.0
SN65HVD31DR
SOIC
D
8
2500
346.0
346.0
29.0
SN65HVD32DR
SOIC
D
8
2500
346.0
346.0
29.0
SN65HVD33DR
SOIC
D
14
2500
346.0
346.0
33.0
SN65HVD34DR
SOIC
D
14
2500
346.0
346.0
33.0
SN65HVD35DR
SOIC
D
14
2500
346.0
346.0
33.0
Pack Materials-Page 2
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