SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS z Power Management in Note book z Powered System z DC/DC Converter z Load Switch FEATURES PIN CONFIGURATION 30V/20A,RDS(ON)= 12mΩ@VGS=10V 30V/15A,RDS(ON)= 17mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 package design TO-252 PART MARKING 2009/04/20 Ver.1 Page 1 SPN8878 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain ORDERING INFORMATION Part Number Package Part SPN8878T252RGB TO-252 ※ SPN8878T252RG : Tape Reel ; Pb – Free ; Halogen - Free Marking SPN8878 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current TA=25℃ ID TA=100℃ Pulsed Drain Current IDM Continuous Drain Current IS TO-252-2L Power Dissipation Operating Junction Temperature TA=25℃ TO-251 18 13 40 5 A A A 40 PD 55 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W 2009/04/20 Ver.1 Page 2 SPN8878 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS≥5V,VGS =10V Forward Transconductance gfs Diode Forward Voltage VSD IS=40A,VGS =0V RDS(on) 1.0 3.0 VDS=0V,VGS=±20V VDS=24V,VGS=0V VDS=24V,VGS=0V TJ=85℃ VGS= 10V,ID=20A VGS=4.5V,ID=15A VDS=15V,ID=20A Drain-Source On-Resistance 30 ±100 1 5 40 V nA uA A 0.010 0.013 0.012 0.017 15 Ω S 0.8 1.5 28 42 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 140 td(on) 9 15 15 25 20 30 12 20 Turn-On Time Turn-Off Time 2009/04/20 Ver.1 tr td(off) tf VDS=15V,VGS=10V ID= 50A nC 6 5 VDS=15VGS=0V f=1MHz VDD=15V,RL=0.3Ω ID≡50A,VGEN=10V RG=1Ω 1600 pF 285 Page 3 nS SPN8878 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/20 Ver.1 Page 4 SPN8878 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/20 Ver.1 Page 5 SPN8878 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/20 Ver.1 Page 6 SPN8878 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2009/04/20 Ver.1 Page 7 SPN8878 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2009/04/20 Ver.1 Page 8