SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS z Power Management in Note book z Powered System z DC/DC Converter z Load Switch FEATURES 30V/40A,RDS(ON)= 10mΩ@VGS=10V 30V/40A,RDS(ON)= 14mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design PIN CONFIGURATION TO-252 TO-251 PART MARKING 2011/04/19 Ver.4 Page 1 SPN8882 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain ORDERING INFORMATION Part Number Package SPN8882T252RG SPN8882T251TG ※ SPN8882T252RG : Tape Reel ; Pb – Free ※ SPN8882T251TG : Tube ; Pb – Free Part TO-252 TO-251 Marking SPN8882 SPN8882 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current TA=25℃ ID TA=100℃ Pulsed Drain Current Continuous Drain Current Single Pulse Drain to Source Avalanche Energy − Starting (TJ=25°C , VDD=27V , VGS=10V , IAS=28A , L=0.1mH ) Operating Junction Temperature TA=25℃ TO-251 40 A IDM 100 A IS 50 A EAS 41 mJ TO-252-2L Power Dissipation 60 40 PD 55 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W 2011/04/19 Ver.4 Page 2 SPN8882 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS = 0V , ID =250uA VGS(th) VDS = VGS,IDS =250uA Gate Leakage Current IGSS Forward Transconductance gfs VDS = 0V,VGS = ±20 V VDS = 24V,VGS =0V VDS = 24V,VGS =0V, TJ = 125C VGS = 10V, ID = 35A VGS = 4.5V, ID = 35A VDS = 15V, ID =20 A Zero Gate Voltage Drain Current IDSS Diode Forward Voltage VSD IF = 40 A,VGS = 0V Drain-Source On-Resistance RDS(on) 30 0.8 2.4 ±100 1 100 0.008 0.012 0.010 0.014 10 V nA uA Ω S 1.0 1.5 12 20 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 200 td(on) 8 12 10 15 18 30 6 9 Turn-On Time Turn-Off Time 2011/04/19 Ver.4 tr td(off) tf VDS = 15V,VGS = 5V, ID =50 A nC 4 5 VGS = 0V, VDS = 25V, F=1MHz (VDD = 15 V,ID = 50 A, VGS=10V,RG = 2.5Ω) 1500 pF 320 Page 3 ns SPN8882 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/04/19 Ver.4 Page 4 SPN8882 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/04/19 Ver.4 Page 5 SPN8882 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/04/19 Ver.4 Page 6 SPN8882 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2011/04/19 Ver.4 Page 7 SPN8882 N-Channel Enhancement Mode MOSFET TO-251 PACKAGE OUTLINE 2011/04/19 Ver.4 Page 8 SPN8882 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2011/04/19 Ver.4 Page 9