SSF1020
Feathers:
ID =60A
Advanced trench process technology
BV=100V
Ultra low Rdson, typical 16mohm
Rdson=20mΩ（max.）
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF1020 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
SSF1020 TOP View (TO220)
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1020 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
Absolute Maximum Ratings
Parameter
Max.
Continuous drain current,VGS@10V
60
ID@Tc=100ْC Continuous drain current,VGS@10V
50
ID@Tc=25 ْC
IDM
Units
A
240
Pulsed drain current ①
150
W
Linear derating factor
2.0
W/ ْC
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
240
mJ
EAR
Repetitive avalanche energy
TBD
PD@TC=25ْC Power dissipation
TJ
TSTG
Operating Junction and
–55 to +150
Storage Temperature Range
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.83
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Test Conditions
BVDSS
Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
16
20
mΩ
VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
3.0
4.0
V
VDS=VGS,ID=250μA
-
58
—
S
VDS=5V,ID=30A
—
—
1
—
—
10
—
—
100
gfs
IDSS
IGSS
Forward transconductance
Drain-to-Source leakage current
Gate-to-Source forward leakage
©Silikron Semiconductor CO.,LTD
2009.12.13
VDS=100V,VGS=0V
μA
VDS=100V,
VGS=0V,TJ=150ْC
nA
Version : 1.0
VGS=20V
page
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SSF1020
Gate-to-Source reverse leakage
—
—
-100
VGS=-20V
Qg
Total gate charge
—
90
—
ID=30A
Qgs
Gate-to-Source charge
—
14
—
Qgd
Gate-to-Drain("Miller") charge
—
24
—
VGS=10V
td(on)
Turn-on delay time
—
18.2
—
VDD=30V
Rise time
—
15.6
—
Turn-Off delay time
—
70.5
—
Fall time
—
13.8
—
VGS=10V
Ciss
Input capacitance
—
3150
—
VGS=0V
Coss
Output capacitance
—
300
—
Crss
Reverse transfer capacitance
—
240
—
tr
td(off)
tf
VDD=30V
nC
ID=2A ,RL=15Ω
nS
RG=2.5Ω
VDS=25V
pF
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
.
Forward Turn-on Time
.
Min.
Typ.
Max.
—
—
60
Units
Test Conditions
MOSFET symbol
showing the
A
integral reverse
—
—
240
—
—
1.3
V
TJ=25ْC,IS=30A,VGS=0V ③
－
57
—
nS
TJ=25ْC,IF=60A
－
107
—
nC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 40A, VDD = 50V
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
BV dss
EAS test circuit
©Silikron Semiconductor CO.,LTD
Gate charge test circuit
2009.12.13
Version : 1.0
page
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SSF1020
Switch Time Test Circuit：
Switch Waveforms:
Transfer Characteristic
Capacitance:
On Resistance vs Junction Temperature
Breakdown Voltage vs Junction Temperature
©Silikron Semiconductor CO.,LTD
2009.12.13
Version : 1.0
page
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SSF1020
Source-Drain Diode Forward Voltage
Gate Charge
Safe Operation Area
Max Drain Current vs Junction Temperature
Transient Thermal Impedance Curve
©Silikron Semiconductor CO.,LTD
2009.12.13
Version : 1.0
page
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SSF1020
TO220 MECHANICAL DATA:
©Silikron Semiconductor CO.,LTD
2009.12.13
Version : 1.0
page
5of5