SECOS SSF7400

SSF7400
30V , 1.7A , RDS(ON) 85mΩ
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOT-323
The SSF7400 uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltage as low as 2.5V. It can be
used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters.
A
L
3
3
C B
Top View
1
1
K
2
E
2
FEATURES
●
●
D
Lower Gate Charge
Small Package Outline
F
REF.
A
B
C
D
E
F
MARKING
7400
H
G
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
0.650 TYP.
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-323
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
V
TA=25°C
Continuous Drain Current3
TA=70°C
Pulsed Drain Current 1,2
Power Dissipation
TA=25°C
ID
1.3
A
IDM
10
A
PD
0.35
W
0.0028
W / °C
-55~150
°C
360
°C / W
Linear Derating Factor
Operating Junction and Storage Temperature Range
1.7
TJ, TSTG
Thermal Resistance Rating
Maximum Junction to Ambient
3
RJA
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on FR4 board, t ≦10sec.
http://www.SeCoSGmbH.com/
25-Aug-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
SSF7400
30V , 1.7A , RDS(ON) 85mΩ
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
VGS=0, ID=250μA
Gate-Threshold Voltage
VGS(th)
0.6
-
1.4
V
VDS=VGS, ID=250μA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VGS=±12V
Drain-Source Leakage Current
IDSS
-
-
1
-
-
5
-
-
85
-
-
100
-
-
140
-
4
-
Drain-Source On-Resistance
1
Forward Transconductance
RDS(ON)
gfs
μA
VDS=30V, VGS=0
VDS=24V, VGS=0
VGS=10V, ID=1.5A
mΩ
VGS=4.5V, ID=1.5A
VGS=2.5V, ID=1A
S
VDS=5V, ID=1.5A
Dynamic
1
Total Gate Charge
Qg
-
4.82
-
Gate-Source Charge
Qgs
-
0.62
-
Gate-Drain (“Miller”) Change
Qgd
-
1.58
-
Td(on)
-
2.5
-
Tr
-
2.3
-
Td(off)
-
22
-
Tf
-
3
-
Input Capacitance
Ciss
-
390
-
Output Capacitance
Coss
-
54.4
-
Reverse Transfer Capacitance
Crss
-
41
-
Gate Resistance
Rg
-
3
1
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS=15V,
VGS=4.5V,
ID=1.7A
nS
VDS=15V,
VGS=10V,
RG=3Ω,
RL=10Ω,
pF
VGS=0,
VDS=15V,
f=1.0MHz
-
Ω
f=1.0MHz
Source-Drain Diode
Continuous Source Current
(Body Diode)
Diode Forward Voltage1
IS
-
-
0.5
A
VG=VD=0, VS=1V
VSD
-
-
1
V
IS=1A, VGS=0
Reverse Recovery Time
TRR
-
10
-
ns
Reverse Recovery Charge
QRR
-
3.6
-
nC
IS=1.7A, VGS=0
dI/dt=100A/μs
1
Notes:
1. Pulse width≦300us, duty cycle≦2%.
http://www.SeCoSGmbH.com/
25-Aug-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
SSF7400
Elektronische Bauelemente
30V , 1.7A , RDS(ON) 85mΩ
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
25-Aug-2011 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
SSF7400
Elektronische Bauelemente
30V , 1.7A , RDS(ON) 85mΩ
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
25-Aug-2011 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4