SSG4801 -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch. B L D M FEATURES A Simple Drive Requirement Lower On-resistance Low Gate Charge N J H MARKING REF. 4801SS C A B C D E F G = Date Code K G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ LeaderSize S1 D1 SOP-8 2.5K 13’ inch G1 D1 S2 D2 G2 D2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V TA = 25°C Continuous Drain Current 1 TA = 70°C Pulsed Drain Current 2 Total Power Dissipation 1 TA = 25°C ID A IDM -30 A PD 2 W 0.016 W / °C TJ, TSTG -55 ~ 150 °C 62.5 °C / W Linear Derating Factor Operating Junction & Storage Temperature Range -5 -4.2 Thermal Resistance Ratings 1 Thermal Resistance Junction-ambient (Max.) RθJA Notes： 1. Surface Mounted on FR4 Board, t ≦ 10sec. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2% http://www.SeCoSGmbH.com/ 19-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSG4801 -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance 2 Gate-Source Leakage Current Drain-Source Leakage Current TJ=25°C TJ=55°C Symbol Min Typ Max Unit BVDSS VGS(th) gfs IGSS -30 -0.5 - 11 - -1.0 ±100 V V S nA VGS=0V, ID = -250uA VDS=VGS, ID = -250uA VDS= -5V, ID = -5A VGS= ±12V - - -1 μA VDS= -24V, VGS=0V - - -5 μA VDS= -24V, VGS=0V - 9.5 2.0 3.1 12 4 37 12 952 103 77 50 65 120 - mΩ VGS= -10V, ID= -5A VGS= -4.5V, ID= -4A VGS= -2.5V, ID= -1A nC VDS= -15V, ID = -5A, VGS= -4.5V nS VDS= -15V, VGS= -10V RL=3Ω, RG=6Ω pF VDS= -15V VGS=0V f=1.0MHz V IS= -1.7A, VGS=0V IDSS Static Drain-Source On-Resistance 2 RDS(ON) Total Gate Charge 2 Gate-Source Chagre Gate-Drain (“Miller”) Change Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf CISS COSS CRSS Test condition Source-Drain Diode Forward On Voltage 2 VSD - - -1.2 Notes： 1 Surface Mounted on FR4 Board, t ≦ 10sec. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2% http://www.SeCoSGmbH.com/ 19-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSG4801 Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 19-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSG4801 Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 19-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4