SSG4228 6.8A, 30V, RDS(ON) 26m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4228 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. B L FEATURES D M Low on-resistance Simple Drive Requirement Double-N MosFET Package A C N J H K G F E MARKING CODE REF. 4228SS A B C D E F G = Date Code PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 3K 13’ inch Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D G D S D G D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TA = 25°C Continuous Drain Current 3 TA = 70°C Pulsed Drain Current 1 Power Dissipation 1 Maximum Junction to Ambient 3 ID http://www.SeCoSGmbH.com/ 18-Feb-2011 Rev. B 5.5 A IDM 40 A PD 2 W RθJA 62.5 °C / W 0.016 W / °C -55~150 °C Linear Derating Factor Operating Junction & Storage Temperature Range 6.8 TJ, TSTG Any changes of specification will not be informed individually. Page 1 of 4 SSG4228 6.8A, 30V, RDS(ON) 26m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Static Drain-Source Breakdown Voltage BVDSS 30 - - V △BVDS/△Tj - 0.03 - V / °C VGS(th) 1 - 3 V VDS=VGS, ID =250μA Gate-Body Leakage IGSS - - ±100 nA VGS=±20V Zero Gate Voltage Drain Current IDSS - - 1 μA VDS=30V,VGS=0 - - 25 μA VDS=24V,VGS=0 - - 26 - - 40 Qg - 9 15 Qgs - 2 - Qgd - 6 - Td(on) - 10 - Tr - 9 - Td(off) - 18 - Tf - 6 - Input Capacitance Ciss - 580 930 Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss - 108 - Forward Transfer Conductance Gfs - 15 Breakdown Voltage Temp. Coefficient Gate-Threshold Voltage Drain-Source On-Resistance 2 Total Gate Charge 2 Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time 2 Rise Time Turn-Off Delay Time Fall Time RDS(ON) mΩ VGS=0V, ID=250μA Reference to 25°C, ID =1mA VGS=10V, ID =6A VGS=4.5V, ID =4A nC ID= 6.8A VDS= 24V VGS= 4.5V nS VDS= 15V ID= 1A VGS= 10V RG= 3.3Ω RD= 15Ω pF VGS=0V VDS=25V f=1.0MHz - S VDS=10V, ID=6A Source-Drain Diode Forward On Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge VDS - - 1.3 V IS=1.7A, VGS=0V, Tj=25°C Trr - 15 - nS Qrr - 9 - nC IS =6.8A, VGS =0V dl/dt=100A/μs Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width 300us, duty cycle 2%. 3 Surface mounted on 1 inch2 copper pad of FR4 board; 135°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 18-Feb-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSG4228 Elektronische Bauelemente 6.8A, 30V, RDS(ON) 26m Dual-N Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 18-Feb-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSG4228 Elektronische Bauelemente 6.8A, 30V, RDS(ON) 26m Dual-N Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 18-Feb-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4