SMG5409

SMG5409
-2.6A , -30V , RDS(ON) 120 mΩ
Ω
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
SC-59
DESCRIPTION
The SMG5409 provide the designer with best combination
of fast switching, low on-resistance and cost-effectiveness.
The SMG5409 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
A
L
3
3
1
1
K
2
E
2
D
FEATURES
C B
Top View
F
Simple Drive Requirement
Small Package Outline
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
MARKING
A
B
C
D
E
F
5409
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
H
G
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
TOP VIEW
Leader Size
1
7 inch
3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
TA=25°C
2
-2.6
ID
A
TA=70°C
Pulsed Drain Current
1
Power Dissipation
TA=25°C
-2
IDM
-12
A
PD
1.38
W
0.01
W / °C
-55~150
°C
90
°C / W
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient
2
RθJA
Notes:
1. Pulse width limited by Max. junction temperature.
2. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
SMG5409
-2.6A , -30V , RDS(ON) 120 mΩ
Ω
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
VGS=0, ID= -250uA
Gate-Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID= -250uA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VGS=±20V
-
-
-1
Drain-Source Leakage Current
IDSS
Drain-Source On-Resistance
1
Forward Transconductance
RDS(ON)
gfs
µA
-
-
-5
-
-
120
VDS= -24V, VGS=0
mΩ
-
-
170
-
4
-
VDS= -30V, VGS=0
VGS= -10V, ID= -2.6A
VGS= -4.5V, ID= -2.0A
S
VDS= -5V, ID= -2.5A
Dynamic
Total Gate Charge
1
Qg
-
5
8
Gate-Source Charge
Qgs
-
1
-
Gate-Drain Charge
Qgd
-
3
-
Td(on)
-
8
-
Tr
-
5
-
Td(off)
-
20
-
Tf
-
7
-
Input Capacitance
Ciss
-
412
660
Output Capacitance
Coss
-
91
-
Reverse Transfer Capacitance
Crss
-
62
-
Turn-on Delay Time
1
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS= -24V,
VGS= -4.5V,
ID= -2.6A
nS
VDS= -15V,
VGS= -10V,
RG=3.3Ω,
RD=15Ω,
ID= -1A
pF
VGS=0,
VDS= -25V,
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge
VSD
-
-
-1
V
IS= -1A, VGS=0
TRR
-
16.8
-
ns
QRR
-
10
-
nC
IS= -2.6A, VGS=0
dI/dt=100A/µs
Notes:
1. Pulse width≦300us, duty cycle≦2%.
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SMG5409
Elektronische Bauelemente
-2.6A , -30V , RDS(ON) 120 mΩ
Ω
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SMG5409
Elektronische Bauelemente
-2.6A , -30V , RDS(ON) 120 mΩ
Ω
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4