TOSHIBA SSM3K106TU

SSM3K106TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K106TU
High-Speed Switching Applications
Unit: mm
•
4 V drive
•
Low ON-resistance:
2.1±0.1
Ron = 530 mΩ (max) (@VGS = 4 V)
1.7±0.1
Unit
VDS
20
V
V
VGSS
± 20
DC
ID
1.2
Pulse
IDP
2.4
Gate-source voltage
Drain current
Rating
A
PD (Note 1)
800
PD (Note 2)
500
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain power dissipation
+0.1
0.3 -0.05
3
2
0.166±0.05
Drain-source voltage
Symbol
1
0.7±0.05
Characteristic
2.0±0.1
Absolute Maximum Ratings (Ta = 25°C)
0.65±0.05
Ron = 310 mΩ (max) (@VGS = 10 V)
mW
1: Gate
2: Source
3: Drain
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
2
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm )
Note 2: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Symbol
V (BR) DSS
Test Conditions
Min
Typ.
Max
Unit
ID = 1 mA, VGS = 0
20
⎯
⎯
V
Drain cutoff current
IDSS
VDS = 20 V, VGS = 0
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0
⎯
⎯
±1
μA
Vth
VDS = 5 V, ID = 0.1 mA
1.1
⎯
2.3
V
(Note 3)
0.58
1.16
⎯
S
ID = 0.6 A, VGS = 10 V
(Note 3)
⎯
230
310
ID = 0.6 A, VGS = 4 V
(Note 3)
⎯
390
530
Gate threshold voltage
Forward transfer admittance
⏐Yfs⏐
Drain-source ON-resistance
RDS (ON)
VDS = 5 V, ID = 0.6 A
mΩ
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
36
⎯
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
30
⎯
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
10
⎯
pF
ton
VDD = 10 V, ID = 0.6 A,
⎯
21
⎯
toff
VGS = 0~4 V, RG = 10 Ω
⎯
8
⎯
⎯
−1.0
−1.4
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
VDSF
ID = −1.2 A, VGS = 0 V
(Note 3)
ns
V
Note 3: Pulse test
1
2007-11-01
SSM3K106TU
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
4V
OUT
4 V
90%
IN
0V
RG
0
10 μs
VDD = 10 V
RG = 10 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
Marking
VDD
(c) VOUT
VDD
10%
VDS (ON)
10%
90%
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
KK6
1
2
1
2
Note
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 0.1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower
voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
2
2007-11-01
SSM3K106TU
ID – VDS
ID – VGS
100
Common Source
Ta = 25°C
Common Source
VDS = 5 V
4V
1.5
1
3V
0.5
0
0.4
0.8
1.2
Drain-Source Voltage
1.6
VDS
0.1
Ta = 100°C
−25°C
0.0001
0
2
0.5
1
1.5
Drain-Source ON Resistance
RDS (ON) (Ω)
Drain-Source ON Resistance
RDS (ON) (Ω)
0.6
Ta = 100°C
0.4
25°C
−25°C
2
6
4
Gate-Source Voltage
8
VGS
(V)
0.6
VGS = 4 V
0.4
10 V
0.2
0
0.5
(V)
1
1.5
Drain Current
ID
2
2.5
(A)
Vth – Ta
2
Common Source
(V)
Common Source
Vth
ID = 0.6 A
0.6
Gate Threshold Voltage
Drain-Source ON Resistance
RDS (ON) (Ω)
4.5
0.8
RDS (ON) – Ta
VGS = 4 V
0.4
0.2
0
−25
VGS
4
Ta = 25°C
0
10
1
0.8
3.5
Common Source
0.8
0
3
RDS (ON) – ID
Common Source
0
2.5
1
ID = 0.6 A
0.2
2
Gate-Source Voltage
(V)
RDS (ON) – VGS
1
25°C
0.01
0.001
2.5 V
0
1
ID
6V
10
(mA)
VGS = 10 V
2
Drain Current
Drain Current
ID
(A)
2.5
10 V
0
25
50
75
Ambient Temperature
100
Ta
125
VDS = 5V
1.2
0.8
0.4
0
−25
150
(°C)
ID = 0.1mA
1.6
0
25
50
75
Ambient Temperature
3
100
Ta
125
150
(°C)
2007-11-01
SSM3K106TU
|Yfs| – ID
C – VDS
500
300
(pF)
1000
C
300
100
30
10
Common Source
50
Ciss
Coss
10
Crss
5
Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
3
VDS = 5 V
3
1
100
30
Capacitance
Forward Transfer Admittance
(mS)
⎪Yfs ⎪
3000
Ta = 25°C
1
10
100
Drain Current
1000
ID
1
0.1
10000
1
Drain-Source Voltage
(mA)
Dynamic Input characteristic
(ns)
t
6
VDD = 16 V
5
Switching Time
VGS
Gate-Source Voltage
7
4
3
2
Common Source
ID = 1.2 A
Ta = 25°C
1
0
0.5
1
2
1.5
Total Gate Charge
Qg
toff
100
tf
ton
10
tr
2.5
1
10
(nC)
100
1000
Drain Current
IDR – VDS
2.5
Drain Power Dissipation PD(mW)
VGS = 0
Ta = 25°C
2
D
IDR
G
1.5
S
1
0.5
0
0
-0.2
-0.4
-0.6
Drain-Source Voltage
-0.8
VDS
-1
ID
10000
(mA)
PD - Ta
1000
Common Source
(A)
IDR
(V)
Common Source
VDD = 10 V
VGS = 0∼-4 V
Ta = 25°C
RG = 4.7 Ω
8
Drain Reverse Current
VDS
t – ID
9
0
100
1000
10
(V)
10
b
800
a: mounted on an FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on a ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
600
a
400
200
0
-1.2
0
(V)
4
20
40 60 80 100 120 140 160
Ambient Temperature Ta(°C)
2007-11-01
SSM3K106TU
Rth - tw
Transient Thermal Impedance Rth(°C/W
1000
c
b
a
100
Single pulse
a:Mounted on a ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on an FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on an FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
10
1
0.001
0.01
0.1
1
10
Pulse Width tw (S)
100
1000
5
2007-11-01
SSM3K106TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01