TOSHIBA SSM6J50TU

SSM6J50TU
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J50TU
○ High Current Switching Applications
Unit: mm
•
Compact package suitable for high-density mounting
•
Low on-resistance:
Ron = 205mΩ (max) (@VGS = -2.0 V)
Ron = 100mΩ (max) (@VGS = -2.5 V)
Ron =
64mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
-20
V
Gate-Source voltage
VGSS
±10
V
DC
ID
-2.5
Pulse
IDP
-5
PD
(Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
Drain power dissipation
Note:
A
1,2,5,6 : Drain
3
: Gate
4
: Source
JEDEC
-
JEITA
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2T1D
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 7 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking
6
Equivalent Circuit
5
4
6
5
4
3
1
2
3
KPB
1
2
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Max
Unit
μA
⎯
⎯
±10
V (BR) DSS
ID = −10 mA, VGS = 0
-20
⎯
⎯
V (BR) DSX
ID = −10 mA, VGS = +10 V
-10
⎯
⎯
⏐Yfs⏐
Drain-Source on-resistance
Typ.
VGS = ±8 V, VDS = 0
Vth
Forward transfer admittance
Min
IGSS
IDSS
Gate threshold voltage
Test Condition
RDS (ON)
VDS = −20 V, VGS = 0
VDS = −10 V, ID = −0.2 mA
V
⎯
⎯
−10
μA
−0.5
⎯
−1.2
V
S
VDS = −10 V, ID = −1.5 A
(Note2)
3.1
6.2
⎯
ID = −1.5 A, VGS = −4.5 V
(Note2)
⎯
49
64
ID = −1.5 A, VGS = −2.5 V
(Note2)
⎯
73
100
ID = −1.5 A, VGS = −2.0 V
(Note2)
⎯
105
205
mΩ
Input capacitance
Ciss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
800
⎯
pF
Reverse transfer capacitance
Crss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
120
⎯
pF
Output capacitance
Coss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
160
⎯
pF
Switching time
Turn-on time
ton
VDD = −10 V, ID = −1.5 A,
⎯
15
⎯
Turn-off time
toff
VGS = 0~−5 V, RG = 4.7 Ω
⎯
51
⎯
ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
ID
0
out
10%
90%
−5 V
in
−5 V
0V
VDS (ON)
90%
RG
10 μs
VDD
(c) VOUT
VDD = -10 V
RG = 4.7 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
VDD
10%
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-200 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Be sure to take this into consideration when using the device.
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ID-VDS
-5
-2.5
-10
-1.8
Common Source
Ta=25°C
Drain current ID (A)
Drain current ID (A)
-2.0
-3.0
-6.0
-4
ID-VGS
-10 Common Source
VDS=-3V
Ta=25°C
-3
-1.6
-2
-1
0
Ta=100°C
-1
25°C
-55°C
-0.1
VGS=-1.4V
0
-0.2
-0.4
-0.6
-0.8
-
-1.0
-0.5
0
Drain-Source voltage VDS(V)
RDS(ON)-ID
VDS-VGS
-2.0
Drain-Source voltage VDS(V)
VGS=-2.0V
100
-2.5
-4.5
Common Source
Ta=25°C
-0.3
-1
-3
Common Source
Ta=25°C
-1.6
-1.2
-0.8
-1.5
-0.4
ID=-2.5A
-0.75
0
10
-0.1
-2.5
-2
Gate-Source voltage VGS(V)
1000
Drain-Source on-resistance
RDS(ON)　（ｍΩ）
-1.5
-1
0
-10
Drain current ID (A)
-2
-4
-6
-8
-10
Gate-Source voltage VGS(V)
Vth-Ta
RDS(ON)-Ta
160
-2
Gate threshold voltage Vth(V)
Drain-Source on-resistance
RDS(ON)　（ｍΩ）
VGS=-2.0V
120
VGS=-2.5V
80
VGS=-4.5V
40
Common
Source
ID=-1.5A
Ta=25°C
0
-1.6
-1.2
-0.8
-0.4
Common Source
VDS=-10V
ID=-200μA
Ta=25°C
0
-80
-40
0
40
80
120
160
-80
Ambient temperature Ta(°C)
-40
0
40
80
120
160
Ambient temperature Ta(°C)
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C-VDS
|Yfs|-ID
10000
Capacitance C (pF)
Common Source
VDS=-10V
Ta=25°C
10
|Yfs|(S)
Ta=-55°C
100°C
25°C
1
1000
Ciss
Coss
100
Crss
Common Source
f=1MHz
VGS=0V
Ta=25°C
0.1
-0.1
-0.3
-1
-3
10
-0.1
-10
-0.3
-1
-3
-10
-30
-100
Drain-Source voltage VDS(V)
Drain current ID (A)
IDR-VDS
-10
-10
Drain reverse current IDR (A)
Forward transfer admittance
100
-5.0
-1.0
-3.0
VGS=0V
-3.0
-1.0
-0.3
Common Source
Ta=25°C
- 0.1
0
0.2
0.4
0.6
0.8
Drain-Source voltage VDS(V)
1
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SSM6J50TU
rth – tw
Transient thermal impedance
rth (°C /W)
1000
Single Pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
100
10
1
0.001
0.01
0.1
1
10
Pulse width
tw
100
1000
(s)
Safe operating area
-100
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t
2
Cu pad: 645 mm )
-30
PD – Ta
1.2
Mounted on FR4 board
1 ms*
ID max (Continuous)
-1
Drain power dissipation
ID
10 ms*
10s*
DC operation
-0.3
Ta = 25°C
-0.1
*:Single nonrepetive Pulse
-0.03
Ta = 25°C
-0.01
-0.1
with increase in temperature.
-0.3
-1
-3
Drain-Source voltage
t = 10 s
0.8
0.6
DC
0.4
0.2
0
0
Curves must be derated linearly
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
1
PD
(A)
ID max (pulsed) *
-3
Drain current
(W)
-10
50
Ambient temperature
-10
VDS
-30
100
Ta
150
(°C)
-100
(V)
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SSM6J50TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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