Bulletin I25176 rev. B 04/00 ST203C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design 370A Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers case style TO-200AB (A-PUK) Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST203C..C Units 370 A 55 °C 700 A 25 °C @ 50Hz 5260 A @ 60Hz 5510 A @ 50Hz 138 KA2s @ 60Hz 126 KA2s IT(AV) @ Ths IT(RMS) @ Ths ITSM 2 I t V DRM/V RRM tq range TJ www.irf.com 1000 to 1200 V 20 to 30 µs - 40 to 125 °C 1 ST203C..C Series Bulletin I25176 rev. B 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 10 1000 1100 12 1200 1300 Type number ST203C..C 40 Current Carrying Capability ITM Frequency ITM ITM o 100µs 180 el 180oel Units 50Hz 400Hz 860 840 750 706 1340 1400 1160 1220 5620 2940 5020 2590 1000Hz 700 580 1350 1170 1750 1520 2500Hz 430 340 980 830 910 780 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 VDRM VDRM 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM ST203C..C Units 370 (140) A 55 (85) °C 700 Max. peak, one half cycle, 5260 non-repetitive surge current 5510 Maximum I2t for fusing t = 10ms A 2 No voltage t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, 138 t = 10ms No voltage Initial T J = TJ max 126 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied KA2 s 89 Maximum I2√t for fusing double side (single side) cooled 4630 98 I 2 √t 180° conduction, half sine wave DC @ 25°C heatsink temperature double side cooled 4420 I 2t Conditions 1380 KA2 √s t = 0.1 to 10ms, no voltage reapplied www.irf.com ST203C..C Series Bulletin I25176 rev. B 04/00 On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt 1 t2 1.72 1.17 High level value of forward slope resistance V 0.92 mΩ Maximum holding current 600 Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.83 IL (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 1.22 IH Conditions ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse Low level value of forward slope resistance r ST203C..C Units mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d tq ST203C..C Units Conditions 1000 A/µs TJ = TJ max., VDRM = rated VDRM Typical delay time Max. turn-off time 0.8 Min 20 Max 30 ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST203C..C Units Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 40 mA ST203C..C Units T J = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W T J = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 T J = TJ max., rated VDRM applied 3 ST203C..C Series Bulletin I25176 rev. B 04/00 Thermal and Mechanical Specification Parameter ST203C..C TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, 0.033 case to heatsink K/W 0.017 Mounting force, ± 10% wt DC operation single side cooled K/W 0.08 RthC-hs Max. thermal resistance, Approximate weight Case style Conditions °C 0.17 junction to heatsink F Units DC operation double side cooled DC operation single side cooled DC operation double side cooled 4900 N (500) (Kg) 50 g TO - 200AB (A-PUK) See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side 180° 0.015 0.017 0.011 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 Units Conditions K/W TJ = TJ max. Ordering Information Table Device Code ST 20 3 C 12 C H H 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for t q test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) dv/dt - tq combinations available dv/dt (V/µs) 20 20 CK t (µs) 25 CJ q 30 CH 50 DK DJ DH 100 EK EJ EH 200 -FJ * FH 400 --HH *Standard part number. All other types available only on request. 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/µsec (Standard value) L 4 = 1000V/µsec (Special selection) www.irf.com ST203C..C Series Bulletin I25176 rev. B 04/00 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) 0.3 (0.01) MIN. DIA. MAX. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 38 (1.50) DIA MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25°± 5° Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 42 (1.65) MAX. 130 ST203C..C Series (Single Side Cooled) R thJ-h s (DC) = 0.17 K/W 120 110 100 90 C o ndu ct io n A ng le 80 30° 70 60° 90° 60 120° 50 180° 40 0 50 100 150 200 250 M a x im u m A llo w a b le H e a tsin k T e m p e r a tu re (° C ) Maxim um Allowab le Heatsin k Tem perature (°C) 28 (1.10) 1 30 ST 2 0 3 C ..C S e rie s (Sin g le S id e C o o le d ) R thJ-h s (D C ) = 0 .1 7 K / W 1 20 1 10 1 00 90 80 Co nd uc tio n P eriod 70 60 30 ° 50 60° 90 ° 40 120° 30 20 0 50 180° DC 1 00 15 0 20 0 2 5 0 3 0 0 3 50 4 00 Average O n-state Current (A) A v e ra g e O n -st a te C u rre n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST203C..C Series 130 ST 2 0 3 C ..C S e rie s (D o u b le Sid e C o o le d ) R thJ-hs (D C ) = 0 .0 8 K / W 120 110 100 90 C o nduc tio n An g le 80 70 30° 60 60° 90° 50 1 20° 18 0° 40 30 20 0 1 00 2 00 300 400 50 0 M a x im um A llo w a b le H e a t sin k Te m p e ra t u re (°C ) M a x im u m A llo w a b le H e a t sin k T e m p e ra tu re (°C ) Bulletin I25176 rev. B 04/00 130 ST 2 0 3 C ..C Se rie s (D o ub le S id e C o o le d ) R thJ -hs (D C ) = 0 .0 8 K /W 120 110 100 90 C o ndu c tio n P erio d 80 70 60 50 3 0° 60° 40 180° 90° 1 20° 30 20 0 A v e ra g e O n -st a t e C u rre n t (A ) A v e ra g e O n -st a te C u rre n t (A ) Fig. 4 - Current Ratings Characteristics 1 0 00 180 ° 120 ° 90 ° 60 ° 30 ° 8 00 7 00 R M S Lim it 6 00 5 00 4 00 C o nd uct io n A ng le 3 00 2 00 S T2 0 3 C ..C Se rie s T J = 1 2 5 °C 1 00 0 0 Maxim um Average On-state Power Loss (W ) M a x im u m A v e ra g e O n -st a t e P o w e r Lo ss (W ) Fig. 3 - Current Ratings Characteristics 9 00 1400 DC 180° 120° 90° 60° 30° 1200 1000 800 RM S Lim it 600 C o ndu ctio n Pe rio d 400 ST203C..C Series TJ = 125°C 200 0 0 5 0 1 00 15 0 2 00 2 5 0 3 00 35 0 40 0 45 0 100 200 300 400 500 600 700 800 A v e ra g e O n -st a te C u rre n t (A ) Average On -state Curren t (A) At An y Rated L oad Con dition And W ith Rated VRR M Applied Following Surge. In itial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4500 4000 3500 3000 2500 ST203C..C Series 2000 1 10 100 N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N ) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6 Fig. 6 - On-state Power Loss Characteristics P e a k H a lf Sin e W a v e O n -st a te C u rre n t (A ) Peak Half Sin e Wave On-state Curren t (A) Fig. 5 - On-state Power Loss Characteristics 5000 DC 1 0 0 20 0 30 0 40 0 5 00 6 00 70 0 8 00 5500 M a xim u m N o n Re p e tit iv e Su rg e C u rre n t V e rsu s P u lse T ra in D ura t io n . C o n t ro l 5000 O f C o n d u c tio n M a y N o t Be M a in ta in e d . In it ia l T J = 1 2 5 °C 4500 N o V o lt a g e R e a pp lie d R a te d V RRM R e a p p lie d 4000 3500 3000 2500 S T2 0 3 C ..C Se rie s 2000 0.01 0.1 1 P u lse T ra in D u ra t io n (s) Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled www.irf.com ST203C..C Series Bulletin I25176 rev. B 04/00 T ra n sie n t T h e rm a l Im p e d a n c e Z thJ -hs (K / W ) In stan taneous O n-state Current (A) 10000 ST203C..C Series 1000 TJ = 25°C TJ = 125°C 100 1 1.5 2 2. 5 3 3. 5 4 4.5 5 1 ST 2 0 3 C ..C S e rie s 0 .1 St e a d y St a te V a lue R th J- hs = 0 .1 7 K / W (S in g le Sid e C o o le d ) R thJ-h s = 0 .0 8 K / W 0. 01 (D o u b le S id e C o o le d ) (D C O p e r a tio n ) 0 .0 0 1 0 .0 0 1 0 .0 1 I T M = 50 0 A 3 00 A 20 0 A 150 10 0 A 100 50 A 50 0 0 20 40 60 80 10 100 1 60 I T M = 50 0 A 1 40 3 00 A 2 00 A 1 20 1 00 A 1 00 50 A 80 60 40 ST 2 0 3 C ..C S e rie s TJ = 1 2 5 ° C 20 0 0 20 40 60 80 1 00 Rate O f Fall O f O n-state Current - di/dt (A/µs) R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / µ s) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics 1 E4 P e a k O n - sta t e C u rre n t (A ) M ax im u m R e v e rse Re c o v e ry C u rre n t - Irr (A ) Maximu m R everse Recovery Charge - Qrr (µC) 250 200 1 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 9 - On-state Voltage Drop Characteristics ST203C..C Series TJ = 125 °C 0 .1 S q u a re W a v e P u lse D u rat io n (s) In stantaneous O n-state V oltage (V) Sn ubbe r circ uit R s = 4 7 o hm s C s = 0.22 µF V D = 80% V D RM 100 0 50 0 4 00 20 0 10 0 Snubb er circuit R s = 4 7 o hm s C s = 0. 22 µF V D = 80 % VDR M 50 Hz 1 5 00 1 E3 1 50 0 2 50 0 1 0 00 5 00 40 0 2 00 100 50 Hz 2 5 00 3 00 0 3 00 0 5 00 0 ST203 C. .C Se ries Sinuso id al p ulse T C = 40 °C tp 10 00 0 ST20 3C ..C Serie s Sin uso idal pulse T C = 55°C 5 00 0 tp 10 00 0 1 E2 1 E1 1E2 1 E3 1 E14E 41 E11E 1 P u lse Ba se w id t h (µ s) 1 E2 1 E3 1E4 P u lse Ba se w id t h (µ s) Fig. 13 - Frequency Characteristics www.irf.com 7 ST203C..C Series Bulletin I25176 rev. B 04/00 P e a k O n -sta te C u rre n t (A ) 1 E4 Snub ber c ircu it R s = 22 ohm s C s = 0 .15 µF V D = 80 % V DR M 1 E3 4 00 20 0 1 00 0 5 00 25 00 1 500 100 50 Hz Snub ber circuit R s = 47 o hm s C s = 0 .2 2 µ F V D = 80 % V D RM 40 0 200 150 0 1 00 0 500 1 00 50 Hz 25 0 0 3 00 0 3 00 0 5 00 0 5 00 0 1 E2 10 00 0 ST020 3C ..C Se ries Tra pezo id al p ulse T C = 40 °C di/d t = 50 A/µs tp 1 E1 1 E1 1E2 tp 1 E14E 4 1 E1 1E 1 1E3 ST2 03 C..C Serie s Trap ezo ida l pulse TC = 5 5°C di/d t = 50A /µs 10 00 0 1E2 1E3 1E4 P u lse Ba se w id th ( µs) Pu lse B a se w idt h (µ s) Fig. 14 - Frequency Characteristics P e a k O n - st a t e C u rre n t (A ) 1E4 Sn ubbe r circ uit R s = 4 7 o hm s C s = 0 .22 µF V D = 8 0% V D RM Snubbe r c ircuit R s = 4 7 ohm s C s = 0 .22 µF V D = 8 0% V D RM 1E3 2 50 0 1 500 10 00 50 0 4 00 2 00 1 00 50 Hz 1 50 0 100 0 50 0 40 0 1 00 50 Hz 2 50 0 30 00 30 00 5 00 0 1E2 5 000 ST20 3C. .C Serie s Sin uso idal pulse T C = 40 °C di/dt = 1 00A /µs 10 00 0 tp ST203 C.. C Serie s Trapezo id al pulse TC = 5 5°C di/d t = 10 0A/µs 1 00 00 tp 1E1 1E1 20 0 1E2 1 E3 1 E14E 4 1 E11E 1 1E2 Pu lse B ase w id th (µs) 1E3 1E4 Pu lse B ase w id th ( µ s) Fig. 15 - Frequency Characteristics P e a k O n - st a t e C u rre n t (A ) 1E5 tp 1E4 ST2 03 C..C Series Rec tang ula r pulse di/dt = 50A /µs 20 jo ules pe r pulse 0 .5 1E3 1 2 4 2 0 jou le s pe r pulse 10 1 0 .3 0 .3 0.2 1E2 tp 3 10 0 .5 0.2 0 .1 1E1 1E1 2 5 0 .1 ST20 3C ..C Se ries Sin uso id al p ulse 1E2 1 E3 Pu lse B a se w id t h (µ s) 1 E14E 4 1 E11E 1 1E2 1E3 1E4 P u lse B a se w id t h ( µ s) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 8 www.irf.com ST203C..C Series Bulletin I25176 rev. B 04/00 Re c t a n g ula r g a t e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< =1 µ s (1) (2) (3) (4) PGM PGM PGM PGM = = = = 1 0W , 2 0W , 4 0W , 6 0W , tp tp tp tp = = = = 20 m s 10 m s 5m s 3 .3 m s (a ) (b ) Tj=2 5 °C 1 Tj=-40 °C Tj=1 25 °C In st an t a n e o us G a te V o lt a g e ( V ) 1 00 (1) (2) (3 ) ( 4 ) VGD IG D 0 .1 0 .0 0 1 0 .0 1 D e v ic e : ST 2 0 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V ) 0 .1 1 10 1 00 In sta n t a n e o u s G at e C u rr e n t ( A ) Fig. 17 - Gate Characteristics www.irf.com 9