STMICROELECTRONICS STC08DE150HP

STC08DE150HP
Hybrid emitter switched bipolar transistor
ESBT® 1500V - 8A - 0.075 W
Preliminary Data
General features
Table 1.
General features
VCS(ON)
IC
RCS(ON)
0.6V
8A
0.075Ω
■
Low equivalent on resistance
■
Very fast-switch, up to 150 kHz
■
Squared RBSOA, up to 1500 V
■
Very low CISS driven by RG = 47 Ω
■
In compliance with the 2002/93/EC European
Directive
TO247-4L HP
Description
Internal schematic diagrams
The STC08DE150HP is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed at
providing the best performance in ESBT topology.
The STC08DE150HP is designed for use in aux
flyback smps for any three phase application.
Applications
■
Single switch SMPS based on three phase
mains
Order codes
Part Number
Marking
Package
Packing
STC08DE150HP
C08DE150HP
TO247-4L HP
Tube
October 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11
STC08DE150HP
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STC08DE150HP
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
1500
V
VCS(SS)
Collector-source voltage (V BS =VGS =0V)
VBS(OS)
Base-source voltage (IC =0, VGS =0V)
30
V
VSB(OS)
Source-base voltage (IC =0, VGS =0V)
9
V
± 20
V
Collector current
8
A
Collector peak current (tP < 5ms)
15
A
Base current
4
A
IBM
Base peak current (tP < 1ms)
8
A
Ptot
Total dissipation at T c ≤ 25°C
42
W
Tstg
Storage temperature
-40 to 150
°C
125
°C
Value
Unit
2.4
°C/W
VGS
IC
ICM
IB
TJ
Table 3.
Symbol
Rthj-case
Gate-source voltage
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case
max
3/11
Electrical characteristics
2
STC08DE150HP
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICS(SS)
Collector-source
=1500V
V
current (VBS =VGS =0V) CS(SS)
100
µA
IBS(OS)
Base-source current
(IC =0, V GS =0V)
VBS(OS) =30V
10
µA
ISB(OS)
Source-base current
(IC =0, V GS =0V)
VSB(OS) =9V
100
µA
IGS(OS)
Gate-source leakage
(VBS =0V)
VGS = ± 20V
500
nA
VCS(ON)
Collector-source ON
voltage
1.4
V
V
1.5
1
2
V
V
2.2
3
V
VGS =10V
IC =8A
IB =1.6A
VGS =10V
IC =5A
IB =0.5A
V CS =1V
VGS =10V
4.5
7.5
IC =5A
V CS =1V
VGS =10V
8
10
DC current gain
VBS(ON)
Base-source ON
voltage
VGS =10V
IC =8A IB =1.6A
IC =5A IB =0.5A
VGS(th)
Gate threshold voltage
VBS =VGS
IB =250µA
VCS =25V
f =1MHz
QGS(tot)
ts
tf
ts
tf
VCSW
Input capacitance
Gate-source Charge
INDUCTIVE LOAD
Storage time
Fall time
0.6
0.6
IC =8A
hFE
Ciss
4/11
Electrical characteristics
VGS =10V
1.5
VGS=VCB=0V
750
pF
12.5
nC
VGS =10V
IC =8A
VCS =25V
VCB=0V
VGS =10V
RG =47Ω
VClamp =1200V
tp =4µs
526
ns
IC =5A
IB =0.5A
8.5
ns
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
RG =47Ω
VClamp =1200V
tp =4µs
884
ns
IC =5A
IB =1A
16
ns
Maximum collectorsource voltage
switched without
snubber
RG =47Ω
IC = 8A
hFE =5
1500
V
STC08DE150HP
Table 4.
Symbol
VCS(dyn)
VCS(dyn)
Electrical characteristics
Electrical characteristics
Parameter
Collector-source
dynamic voltage
(500ns)
Collector-source
dynamic voltage
(1µs)
Test Conditions
Min.
Typ.
Max.
Unit
VCC =V Clamp =300V
VGS =10V
IC = 4A
IB = 0.8A
tpeak =500ns
RG =47Ω
6
V
2.2
V
IBpeak = 8A (2IC )
VCC =V Clamp =300V
VGS =10V
IC = 4A
IB = 0.8A
tpeak =500ns
RG =47Ω
IBpeak = 8A (2IC )
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
Dynamic collector-emitter
saturation voltage
Figure 3.
DC current gain
Figure 4.
Gate threshold voltage vs
temperature
5/11
Electrical characteristics
6/11
STC08DE150HP
Figure 5.
Collector-source On voltage
Figure 6.
Collector-source On voltage
Figure 7.
Base-source On voltage
Figure 8.
Base-source On voltage
Figure 9.
Inductive load switching time Figure 10. Inductive load switching time
STC08DE150HP
Electrical characteristics
Figure 11. Reverse biased safe
operating area
2.2
Test circuits
Figure 12. Enlargement FBSOA circuit
Table 5.
VB1 =4.16V
D1 =BA157
R1 =1Ω
R2 =100Ω
R3 =180Ω
Rg =47Ω
Components, values
C1 =4700µF
C2 ≤1000pF
VCC =1500V
Vg =10V
Pulse time = 5µs
7/11
Package mechanical data
3
STC08DE150HP
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
STC08DE150HP
Package mechanical data
TO247-4LHP MECHANICAL DATA
DIM.
A
A1
A2
A3
b
b1
b2
c
D
D1
E
e
e1
L
L1
L2
L3
øP
S
MIN.
5.50
2.85
0.95
1.10
2.50
0.40
23.85
15.45
2.54
mm.
TYP
5.65
3.15
1.92
3.18
1.10
24
21.50
15.60
MAX.
5.80
3.25
1.30
1.50
2.90
0.80
24.15
15.75
5.08
10.20
2.20
2.50
18.50
3
3.55
10.80
2.80
3.65
5.50
7908765A
9/11
Revision history
4
STC08DE150HP
Revision history
Table 6.
10/11
Revision history
Date
Revision
26-Oct-2006
1
Changes
First release.
STC08DE150HP
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