STC4081 Semiconductor NPN Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE=0.4V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with STA1576 Ordering Information Type NO. Marking STC4081 Package Code D SOT-323 : hFE rank Outline Dimensions unit : mm 2.1±0.1 1.25±0.05 0.15±0.05 2 0.30±0.1 3 0~0.1 1.30±0.1 0.90±0.1 2.0±0.2 1 0.1 Min. KST-3003-001 PIN Connections 1. Base 2. Emitter 3. Collector 1 STC4081 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 50 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=50µA, IE=0 50 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 50 - - V Emitter-Base breakdown voltage BVEBO IE=50µA, IC=0 5 - - V Collector cut-off current ICBO VCB=30V, IE=0 - - 0.5 µA Emitter cut-off current IEBO VEB=4V, IC=0 - - 0.5 µA DC current gain hFE* VCE=6V, IC=1mA 70 - 700 - Collector-Emitter saturation voltage Transistion frequency VCE(sat) IC=50mA, IB=5mA - - 0.4 V fT VCE=12V, IC=2mA - 180 - MHz Collector output capacitance Cob VCB=12V, IE=0, f=1MHz - 2 - pF Noise figure NF VCE=6V, IC=0.1mA, f=1KHz, Rg=10KΩ - 1 10 dB * : hFE rank / O : 70 ~ 140, Y : 120 ~ 240, G : 200 ~ 400, L : 300 ~ 700 KST-3003-001 2 STC4081 Electrical Characteristic Curves Fig. 1 PC –Ta Fig. 3 IC -VCE Fig. 2 IC -VBE Fig. 4 hFE -IC Fig. 5 VCE(sat) -IC KST-3003-001 3