STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET Features VDSS (@Tjmax) Type RDS(on) ID STP3NK80Z 800 V < 4.5 Ω 2.5 A STF3NK80Z 800 V < 4.5 Ω 2.5 A STD3NK80Z 800 V < 4.5 Ω 2.5 A STD3NK80Z-1 800 V < 4.5 Ω 2.5 A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability 3 1 TO-220FP TO-220 3 3 2 1 1 DPAK Figure 1. IPAK Internal schematic diagram Application ■ 2 D(2) Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Table 1. G(1) S(3) AM01476v1 Device summary Order codes Marking Package Packaging STP3NK80Z P3NK80Z TO-220 Tube STF3NK80Z F3NK80Z TO-220FP Tube STD3NK80ZT4 D3NK80Z DPAK Tape and reel STD3NK80Z-1 D3NK80Z IPAK Tube September 2009 Doc ID 9565 Rev 6 1/18 www.st.com 18 Contents STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VDS VDGR VGS Parameter TO-220, DPAK IPAK TO-220FP Unit Drain-source voltage (VGS = 0) 800 V Drain-gate voltage (RGS = 20 kΩ) 800 V Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 2.5 2.5 (1) A ID Drain current (continuous) at TC=100 °C 1.57 1.57 (1) A IDM(2) Drain current (pulsed) 10 10 (1) A PTOT Total dissipation at TC = 25 °C 70 25 W 0.56 0.2 W/°C Derating factor VESD(G-S) Gate source ESD (HBM-C=100 pF, R=1.5 kΩ) dv/dt (3) Peak diode recovery voltage slope VISO Insulation withstand voltage (DC) TJ Tstg 2000 V 4.5 V/ns 2500 Operating junction temperature Storage temperature -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 2.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 3. Thermal data Value Symbol Rthj-case Parameter Thermal resistance junction-case max Rthj-a Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose Doc ID 9565 Rev 6 TO-220 TO-220FP 1.78 5 62.5 300 DPAK Unit IPAK 1.78 °C/W 100 °C/W °C 3/18 Electrical ratings Table 4. Symbol 4/18 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 2.5 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAR, VDD=50 V) 170 mJ Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z 2 Electrical characteristics Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS= 0 Zero gate voltage drain current (VGS = 0) VDS = max rating, VDS = max rating, Tc = 125 °C Min. Typ. Max. Unit 800 V 1 µA 50 µA ±10 µA 3.75 4.5 V 3.8 4.5 Ω Min. Typ. Max. Unit Forward transconductance VDS =15 V, ID = 1.25 A - 2.1 - S Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 485 57 11 - pF pF pF Equivalent output capacitance VGS=0, VDS =0 to 640 V - 22 - pF td(on) tr td(off) tf Turn-on delay time Rise time Off-voltage rise time Fall time VDD=400 V, ID= 1.25 A, RG= 4.7 Ω, VGS=10 V (see Figure 19) - 17 27 36 40 - ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=640 V, ID = 2.5 A VGS =10 V - 19 3.2 10.8 - nC nC nC IDSS IGSS Gate body leakage current VGS = ± 20 V (VGS = 0) VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 1.25 A Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq.(2) 3 Dynamic Parameter Test conditions 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Doc ID 9565 Rev 6 5/18 Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Test conditions Min Typ. Max Unit Source-drain current - 2.5 A (1) Source-drain current (pulsed) - 10 A (2) Forward on voltage ISD= 2.5 A, VGS=0 - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5 A, di/dt = 100 A/µs, VDD=50 V (see Figure 21) - 384 1600 8.4 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.5 A, di/dt = 100 A/µs, VDD=50 V, Tj=150 °C (see Figure 21) - 474 2100 8.8 ns µC A ISDM VSD STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Table 8. Symbol Gate-source Zener diode Parameter Test conditions BVGSO(1) Gate-source breakdown voltage Igs=± 1mA (open drain) Min. Typ. Max. Unit 30 - - V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 6/18 Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, DPAK, IPAK Figure 3. Thermal impedance for TO-220, DPAK, IPAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics Doc ID 9565 Rev 6 7/18 Electrical characteristics Figure 8. STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Transconductance Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature 8/18 Figure 13. Normalized on resistance vs temperature Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Figure 14. Source-drain diode forward characteristics Electrical characteristics Figure 15. Normalized BVDSS vs temperature Figure 16. Maximum avalanche energy vs temperature Doc ID 9565 Rev 6 9/18 Test circuits 3 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform AM01471v1 Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 10/18 0 Doc ID 9565 Rev 6 10% AM01473v1 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 9565 Rev 6 11/18 Package mechanical data STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 12/18 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 0.181 0.034 0.066 0.027 0.62 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 Doc ID 9565 Rev 6 Max 0.050 16.40 28.90 3.75 2.65 Typ 0.147 0.104 0.151 0.116 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J Doc ID 9565 Rev 6 13/18 Package mechanical data STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 14/18 Doc ID 9565 Rev 6 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H Doc ID 9565 Rev 6 15/18 Packing mechanical data 5 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 16/18 inch 1.5 D1 1.5 E 1.65 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 Doc ID 9565 Rev 6 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z 6 Revision history Revision history Table 9. Revision history Date Revision Changes 09-Sep-2004 3 Complete document 10-Aug-2006 4 New template, no content change 26-Feb-2009 5 Updated mechanical data 07-Sep-2009 6 VESD(G-S) value has been corrected Doc ID 9565 Rev 6 17/18 STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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