STMICROELECTRONICS STF5NK100Z

STP5NK100Z, STF5NK100Z
STW5NK100Z
N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247
SuperMESH3™ Power MOSFET
Features
Type
VDSS
(@TJMAX)
RDS(on)max
ID
STF5NK100Z
1000 V
< 3.7 Ω
3.5 A
STP5NK100Z
1000 V
< 3.7 Ω
3.5 A
STW5NK100Z
1000 V
< 3.7 Ω
3.5 A
3
■
Extremely high dv/dt capability
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatibility
1
TO-220
2
TO-220FP
2
3
1
TO-247
Applications
■
Figure 1.
Switching application
Internal schematic diagram
D(2)
Description
The new SuperMESH™ series of Power
MOSFETS is the result of further design
improvements on ST's well-established stripbased PowerMESH™ layout. In addition to
significantly lower on-resistance, the device offers
superior dv/dt capability to ensure optimal
performance even in the most demanding
applications. The SuperMESH™ devices further
complement an already broad range of innovative
high voltage MOSFETs, which includes the
revolutionary MDmesh™ products.
Table 1.
G(1)
S(3)
AM01476v1
Device summary
Order code
Marking
Package
Packaging
STF5NK100Z
F5NK100Z
TO-220FP
Tube
STP5NK100Z
P5NK100Z
TO-220
Tube
STW5NK100Z
W5NK100Z
TO-247
Tube
May 2009
Doc ID 10850 Rev 5
1/15
www.st.com
15
Contents
STP5NK100Z, STF5NK100Z, STW5NK100Z
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
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Doc ID 10850 Rev 5
STP5NK100Z, STF5NK100Z, STW5NK100Z
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220, TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
1000
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
3.5
3.5 (1)
A
ID
Drain current (continuous) at TC=100°C
2.2
2.2 (1)
A
IDM(2)
Drain current (pulsed)
14
14 (1)
A
PTOT
Total dissipation at TC = 25°C
125
30
W
1
0.24
W/°C
Derating factor
VESD(G-S)
dv/dt (3)
VISO
TJ
Tstg
Gate source ESD
(HBM-C=100pF, R=1.5 kΩ)
Peak diode recovery voltage slope
4000
V
4.5
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; Tc= 25°C)
2500
Operating junction temperature
Storage temperature
-55 to 150
V
°C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 3.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 3.
Thermal data
Value
Symbol
Rthj-case
Parameter
Unit
TO-220, TO-247
TO-220FP
1
4.2
Thermal resistance junction-case max
°C/W
Rthj-a
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJMAX)
3.5
A
EAS
Single pulse avalanche energy
(starting Tj=25 °C, Id=Iar, Vdd=50 V)
250
mJ
Doc ID 10850 Rev 5
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Electrical characteristics
2
STP5NK100Z, STF5NK100Z, STW5NK100Z
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125 °C
IGSS
Gate body leakage current
VGS = ± 20 V
(VGS = 0)
V(BR)DSS
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 1.75 A
Table 6.
Symbol
Min.
Typ.
Max.
Unit
1000
V
1
50
µA
µA
±10
µA
3.75
4.5
V
2.7
3.7
Ω
Min.
Typ.
Max.
Unit
-
4
S
pF
pF
pF
3
Dynamic
Parameter
Test conditions
gfs (1)
Forward transconductance VDS =15 V, ID = 1.75 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0
-
1154
106
21.3
Equivalent output
capacitance
VGS=0, VDS =0 V to 800 V
-
46.8
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=500 V, ID= 1.75 A,
RG=4.7 Ω, VGS=10 V
(see Figure 21)
-
22.5
7.7
51.5
19
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=800 V, ID = 3.5 A
VGS =10 V
(see Figure 22)
-
42
7.3
21.7
Cosseq(2)
59
nC
nC
nC
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/15
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STP5NK100Z, STF5NK100Z, STW5NK100Z
Table 7.
Symbol
ISD
Electrical characteristics
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
3.5
A
ISDM(1)
Source-drain current (pulsed)
-
14
A
VSD(2)
Forward on voltage
ISD= 3.5 A, VGS=0
-
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 3.5 A,
di/dt = 100 A/µs,
VDD=30 V
(see Figure 23)
-
605
3.09
10.5
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 3.5 A,
di/dt = 100 A/µs,
VDD=35 V, Tj=150 °C
(see Figure 23)
-
742
4.2
11.2
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Table 8.
Symbol
BVGSO
Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage Igs=± 1 mA (open drain)
Min.
30
Typ.
Max.
Unit
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 10850 Rev 5
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Electrical characteristics
STP5NK100Z, STF5NK100Z, STW5NK100Z
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP
Figure 3.
Thermal impedance for TO-220FP
Figure 4.
Safe operating area for TO-220
Figure 5.
Thermal impedance for TO-220
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
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STP5NK100Z, STF5NK100Z, STW5NK100Z
Figure 8.
Output characteristics
Figure 10. Transconductance
Electrical characteristics
Figure 9.
Transfer characteristics
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Doc ID 10850 Rev 5
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Electrical characteristics
STP5NK100Z, STF5NK100Z, STW5NK100Z
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVdss vs temperature
Figure 18. Maximum avalanche energy vs
temperature
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STP5NK100Z, STF5NK100Z, STW5NK100Z
3
Test circuits
Test circuits
Figure 19. Unclamped inductive load test
circuit
Figure 20. Unclamped inductive waveform
Figure 21. Switching times test circuit for
resistive load
Figure 22. Gate charge test circuit
Figure 23. Test circuit for inductive load
switching and diode recovery times
Doc ID 10850 Rev 5
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Package mechanical data
4
STP5NK100Z, STF5NK100Z, STW5NK100Z
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/15
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STP5NK100Z, STF5NK100Z, STW5NK100Z
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.5
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_J
Doc ID 10850 Rev 5
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Package mechanical data
STP5NK100Z, STF5NK100Z, STW5NK100Z
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
12/15
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
Doc ID 10850 Rev 5
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.147
0.104
0.151
0.116
STP5NK100Z, STF5NK100Z, STW5NK100Z
Package mechanical data
TO-247 Mechanical data
mm.
Dim.
A
Min.
4.85
Typ
Max.
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.45
L
14.20
14.80
L1
3.70
4.30
L2
18.50
øP
3.55
øR
4.50
3.65
5.50
S
5.50
Doc ID 10850 Rev 5
13/15
Revision history
5
STP5NK100Z, STF5NK100Z, STW5NK100Z
Revision history
Table 9.
14/15
Document revision history
Date
Revision
Changes
12-Oct-2004
1
First release
08-Sep-2005
2
Complete datasheet
16-Dec-2005
3
Inserted ecopack indication
16-Aug-2006
4
New template, no content change
15-May-2009
5
Modified: Section 2.1: Electrical characteristics (curves)
Doc ID 10850 Rev 5
STP5NK100Z, STF5NK100Z, STW5NK100Z
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Doc ID 10850 Rev 5
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