STPS16L40CT ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) 2x8A VRRM 40 V Tj (max) 150 °C VF (max) 0.45 V A1 K A2 FEATURES AND BENEFITS n n n LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION NEGLIGIBLE SWITCHING LOSSES ALLOWING HIGH FREQUENCY OPERATION AVALANCHE CAPABILITY SPECIFIED A2 A1 K DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB this device is intended for use in low voltage, high frequency converters, free-wheeling and polarity protection applications. TO-220AB ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current Value 40 Unit V 30 A Tc = 140°C Per diode 8 A δ = 0.5 Per device 16 A 180 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRRM Repetitive peak reverse current tp = 2 µs square F=1kHz 1 A IRSM Non repetitive peak reverse current tp = 100 µs square 2 A PARM Repetitive peak avalanche power tp = 1µs 4000 W - 65 to + 150 °C 150 °C 10000 V/µs Tstg Tj dV/dt * : Storage temperature range Tj = 25°C Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed : 6A 1/4 STPS16L40CT THERMAL RESISTANCES Symbol Rth(j-c) Parameter Value 2.2 1.3 0.3 Per diode Total Coupling Junction to case Rth(c) Unit °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter VF * Tests Conditions Reverse leakage current Tj = 25°C Forward voltage drop Tj = 25°C Min. Typ. Max. 0.7 Unit mA 15 35 mA 0.5 V 0.39 0.45 VR = VRRM Tj = 100°C IF = 8 A Tj = 125°C IF = 8 A Tj = 25°C IF = 16 A Tj = 125°C IF = 16 A 0.63 0.55 0.64 Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.26 x IF(AV) + 0.024 IF2(RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average current versus average forward current (per diode). temperature (δ = 0.5) (per diode). PF(av)(W) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 δ = 0.1 δ = 0.05 δ = 0.2 9 8 7 6 5 4 3 2 1 0 δ = 0.5 δ=1 T IF(av) (A) 0 1 2 3 4 5 6 δ=tp/T 7 8 tp 9 10 Fig. 3: Normalized avalanche power derating versus pulse duration. IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W T δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 ambient 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 2/4 Tj(°C) tp(µs) 0.1 1 0 10 100 1000 0 25 50 75 100 125 150 STPS16L40CT Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values) (per diode). 120 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration . Zth(j-c)/Rth(j-c) IM(A) 1.0 100 0.8 80 Tc=25°C 60 0.6 Tc=75°C 0.4 40 Tc=125°C t Single pulse 1E-2 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values) (per diode). 0.0 1E-4 δ=tp/T tp(s) 1E-3 1E-2 1E-1 tp 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(pF) IR(mA) 2E+2 1E+2 T 0.2 t(s) δ=0.5 0 1E-3 δ = 0.2 δ = 0.1 IM 20 2000 Tj=150°C F=1MHz Tj=25°C Tj=125°C 1000 1E+1 1E+0 Tj=75°C 500 Tj=25°C 200 1E-1 1E-2 δ = 0.5 VR(V) 0 5 10 15 20 25 30 VR(V) 35 40 100 1 2 5 10 20 50 Fig. 9: Forward voltage drop versus forward current (maximum values) (per diode). 100.0 IFM(A) Typical values Tj=150°C 10.0 Tj=125°C Tj=25°C 1.0 Tj=75°C VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 3/4 STPS16L40CT PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS Dia C L5 L7 L6 L2 F2 D L9 L4 F M G1 E G Ordering type Marking STPS16L40CT STPS16L40CT n n n n Millimeters Inches A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 A H2 F1 REF. Package Weight Base qty Delivery mode TO-220AB 2g 50 Tube EPOXY MEETS UL94,V0 COOLING METHOD : C RECOMMENDED TORQUE VALUE : 0.55 M.N MAXIMUM TORQUE VALUE : 0.70 M.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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