STPS2060CT ® POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 10 A VRRM 60 V VF (max) 0.58 V A1 K A2 FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD DROP VOLTAGE LOW CAPACITANCE HIGH REVERSE AVALANCHE SURGE CAPABILITY A1 K DESCRIPTION High voltage dual Schottky rectifier suited to Switch Mode Power Supplies and other Power Converters. Packaged in TO-220AB, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses are required. A2 TO-220AB ABSOLUTE R ATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current Value Unit 60 V Per diode 30 A IF(AV) Average forward current Tcase = 120°C VR = 60V δ = 0.5 Per diode Per device 10 20 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 200 A IRRM Repetitive peak reverse current tp = 2 µs F = 1kHz Per diode 1 A IRSM Non repetitive peak reverse current tp = 100 µs Per diode 1 A Tstg Storage temperature range - 65 to + 150 °C Tj dV/dt Maximum junction temperature Critical rate of rise of reverse voltage July 1998 - Ed : 1C 150 10000 V/µs 1/3 STPS2060CT THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case Rth(c) Value Unit Per diode 1.6 °C/W Total 0.9 Coupling 0.15 °C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL STATIC CHARACTERISTICS (per diode) Symbol Parameter IR * Reverse leakage current VF ** C Forward voltage drop Capacitance Test Conditions Max. Unit Tj = 25°C 70 µA Tj = 125°C 33 mA IF = 20 A Tj = 125°C 0.8 V IF = 10 A Tj = 125°C IF = 20 A Tj = 25°C 60 V, 1MHz Tj = 125°C VR = VRRM Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : 2 P = 0.54 x IF(AV) + 0.013 x IF (RMS) 2/3 Min. Typ. 0.58 0.67 0.94 150 pF STPS2060CT PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.4 typ. 0.645 typ. M G1 E G L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 3/3