STPS20L40C Low drop power Schottky rectifier Main product characteristics A1 K IF(AV) 2 x 10 A VRRM 40 V Tj (max) 150° C VF(max) 0.5 V A2 Features and benefits ■ Low forward voltage drop meaning very small conduction losses ■ Low dynamic losses as a result of the schottky barrier ■ Insulated package: TO-220FPAB insulating voltage = 200 V DC capacitance = 12 pF ■ Avalanche capability specified A2 K A1 TO-220FPAB STPS20L40CFP Description Dual center tap Schottky rectifiers designed for high frequency switched mode power supplies and DC to DC converters. These devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. March 2007 Rev 5 1/7 www.st.com 7 Characteristics 1 STPS20L40C Characteristics Table 1. Absolute Ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 40 V IF(RMS) RMS forward voltage 30 A IF(AV) Average forward current Tc = 115° C Per diode δ = 0.5 Per device 10 20 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 180 A IRRM Peak repetitive reverse current tp = 2 µs square F = 1 kHz 1 A IRSM Non repetitive peak reverse current tp = 100 µs square 2 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25°C 4000 W -65 to + 150 °C 150 °C 10000 V/µs Tstg Storage temperature range Maximum operating junction temperature (1) Tj dV/dt 1. dPtot --------------dTj Critical rate of rise of reverse voltage < Table 2. 1 -------------------------Rth ( j – a ) condition to avoid thermal runaway for a diode on its own heatsink Thermal resistances Symbol Rth(j-c) Parameter Per diode Total Coupling Junction to case Value Unit 4.5 3.5 2.5 °C/W When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c). Table 3. Symbol IR(1) VF(1) Static electrical characteristics (per diode) Parameter Reverse leakage current Test Conditions Tj = 25° C Tj = 100° C Forward voltage drop VR = VRRM Tj = 25° C IF = 10 A Tj = 125° C IF = 10 A Tj = 25° C IF = 20 A Tj = 125° C IF = 20 A 1. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.28 x IF(AV) + 0.022 IF2(RMS) 2/7 Min. Typ. 15 Max. Unit 0.7 mA 35 mA 0.55 0.44 0.5 V 0.73 0.62 0.72 STPS20L40C Figure 1. Characteristics Average forward power Figure 2. dissipation versus average forward current (per diode) IF(AV)(A) PF(AV)(W) 8 δ = 0.1 12 δ = 0.2 δ = 0.5 δ = 0.05 7 Average forward current versus ambient temperature (δ = 0.5, per diode) 11 Rth(j-a)=Rth(j-c) 10 9 6 8 δ=1 5 Rth(j-a)=15°C/W 7 6 4 5 3 4 T 2 T 3 2 1 δ=tp/T IF(AV)(A) 1 tp δ=tp/T 0 0 0 2 4 Figure 3. 6 8 10 12 14 Normalized avalanche power derating versus pulse duration 0 25 Figure 4. PARM(tp) PARM(1µs) Tamb(°C) tp 50 75 100 125 150 Normalized avalanche power derating versus junction temperature PARM(tp) PARM(25°C) 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(°C) tp(µs) 0.001 0.01 0.1 Figure 5. 1 0 10 100 25 1000 Non repetitive surge peak forward current versus overload duration (maximum values, per diode) Figure 6. 50 75 100 125 150 Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) IM(A) 1.0 100 90 0.8 80 70 60 TC=25°C 0.6 δ = 0.5 50 40 TC=50°C 0.4 δ = 0.2 30 20 10 0 1E-3 TC=100°C IM t 0.2 tp(s) t(s) δ=0.5 1E-2 T δ = 0.1 1E-1 1E+0 0.0 1E-3 Single pulse 1E-2 1E-1 δ=tp/T 1E+0 tp 1E+1 3/7 Characteristics Figure 7. STPS20L40C Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 8. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) IR(mA) 2000 2E+2 1E+2 F=1MHz VOSC=30mVRMS Tj=25°C Tj=150°C Tj=125°C 1000 1E+1 Tj=75°C 1E+0 1E-1 Tj=25°C 1E-2 VR(V) VR(V) 100 1E-3 0 5 Figure 9. 10 15 20 25 30 35 40 Forward voltage drop versus forward current (maximum values) (per diode) IFM(A) 100.0 Tj=150°C (typical values) Tj=125°C 10.0 Tj=25°C 1.0 Tj=75°C VFM(V) 0.1 0.0 4/7 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 2 5 10 20 50 STPS20L40C 2 Package Information Package Information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.55 Nm ● Maximum torque value: 0.70 Nm Table 4. TO-220FPAB dimensions Dimensions Ref A B H Dia L6 L7 L2 L3 Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L5 F1 L4 D F2 L2 F E 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 G1 G In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information 3 4 6/7 STPS20L40C Ordering information Ordering type Marking Package Weight Base qty Delivery mode STPS20L40CFP STPS20L40CFP TO-220FPAB 2g 50 Tube Revision history Date Revision Jul_2003 4B 26-Mar-2007 5 Description of Changes Last release. Removed ISOWATT, TO-220AB and TO-247 packages. STPS20L40C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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