STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH™ Power MOSFET General features Type VDSS RDS(on) ID Pw STD2NC45-1 450V <4.5Ω 1.5A 30W STQ1NC45R-AP 450V <4.5Ω 0.5A 3.1W ■ 3 Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ New high voltage benchmark 2 1 IPAK TO-92 (ammopak) Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. Internal schematic diagram Applications ■ Switching application – Switch mode low power supplies (SMPS) – Low power, low cost CFL (compact fluorescent lamps) – Low power battery chargers Order codes Part number Marking Package Packaging STD2NC45-1 D2NC45 IPAK Tube STQ1NC45R-AP Q1NC45R TO-92 Ammopak July 2006 Rev 3 1/15 www.st.com 15 Contents STD2NC45-1 - STQ1NC45R-AP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ................................................ 9 STD2NC45-1 - STQ1NC45R-AP 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit IPAK TO-92 VDS Drain-source voltage (VGS = 0) 450 V VGS Gate- source voltage ±30 V ID Drain current (continuous) at TC = 25°C 1.5 0.5 A ID Drain current (continuous) at TC = 100°C 0.95 0.315 A Drain current (pulsed) 6 2 A Total dissipation at TC = 25°C 30 3.1 W 0.24 0.025 W/°C IDM (1) PTOT Derating factor dv/dt (2) Tstg Tj Peak diode recovery voltage slope 3 V/ns Storage temperature °C –65 to 150 Max. operating junction temperature °C 1. Pulse width limited by safe operating area 2. ISD < 0.5A, di/dt < 100 A/µs, VDD =80% V(BR)DSS Table 2. Thermal data Value Symbol Parameter Unit IPAK TO-92 Rthj-case Thermal resistance junction-case max 4.1 -- °C/W Rthj-amb Thermal resistance junction-ambient max 100 120 °C/W Rthj-lead Thermal resistance junction-lead max -- 40 °C/W 275 260 °C Tl Table 3. Symbol Maximum lead temperature for soldering purpose Avalanche characteristics Parameter Value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 1.5 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD=50V) 25 mJ 3/15 Electrical characteristics 2 STD2NC45-1 - STQ1NC45R-AP Electrical characteristics (TCASE = 25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test condictions Drain-source breakdown voltage ID = 250µA, VGS = 0 IDSS Zero gate voltage Drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 30V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 0.5A V(BR)DSS Table 5. Symbol Typ. Max. Unit 450 2.3 V 1 50 µA µA ±100 nA 3 3.7 V 4.1 4.5 Ω Dynamic Parameter Test condictions Min. Typ. VDS > ID(on) x RDS(on)max, ID = 0.5A 1.1 Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 160 27.5 4.7 Total gate charge Gate-source charge Gate-drain charge VDD = 360V, ID = 1.5A, VGS = 10V, RG = 4.7Ω (see Figure 18) 7 1.3 3.2 gfs (1) Forward transconductance Ciss Coss Crss Qg Qgs Qgd 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % 4/15 Min. Max. Unit S pF pF pF 10 nC nC nC STD2NC45-1 - STQ1NC45R-AP Table 6. Symbol Electrical characteristics Switching times Parameter Test condictions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 225V, ID = 0.5A RG = 4.7Ω VGS = 10V (see Figure 17) 6.7 4 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 360V, ID = 1.5A, RG = 4.7Ω, VGS = 10V (see Figure 17) 8.5 12 18 ns ns ns Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Test condictions Min Typ. Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 1.5A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 1.5A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see Figure 22) 225 530 4.7 Max Unit 1.5 6.0 A A 1.6 V ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % 5/15 Electrical characteristics STD2NC45-1 - STQ1NC45R-AP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for IPAK Figure 2. Thermal impedance for IPAK Figure 3. Safe operating area for TO-92 Figure 4. Thermal impedance for TO-92 Figure 5. Output characterisics Figure 6. Transfer characteristics 6/15 STD2NC45-1 - STQ1NC45R-AP Electrical characteristics Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/15 Electrical characteristics STD2NC45-1 - STQ1NC45R-AP Figure 13. Source-drain diode forward characteristics Figure 14. Normalized BVDSS vs temperature Figure 15. Max Id current vs Temperature Figure 16. Maximum avalanche energy vs temperature 8/15 STD2NC45-1 - STQ1NC45R-AP 3 Test circuit Test circuit Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/15 Package mechanical data 4 STD2NC45-1 - STQ1NC45R-AP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/15 STD2NC45-1 - STQ1NC45R-AP Package mechanical data TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 11/15 Package mechanical data STD2NC45-1 - STQ1NC45R-AP TO-92 MECHANICAL DATA mm. inch DIM. MAX. MIN. A 4.32 MIN. 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 TYP. MAX. E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 0.094 R 2.16 2.41 0.085 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V 12/15 TYP 5° 5° STD2NC45-1 - STQ1NC45R-AP Package mechanical data TO-92 AMMOPACK DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A1 4.45 4.95 0.170 0.194 T 3.30 3.94 0.130 0.155 T1 1.6 T2 2.3 d 0.41 0.06 0.09 0.56 0.016 0.022 P0 12.5 12.7 12.9 0.49 0.5 0.51 P2 5.65 6.35 7.05 0.22 0.25 0.27 2.54 2.94 0.09 0.1 0.11 2 -0.08 19 0.69 0.71 0.74 F1, F2 2.44 delta H -2 W 17.5 18 W0 5.7 6 6.3 0.22 0.23 0.24 W1 8.5 9 9.25 0.33 0.35 0.36 W2 0.5 H 18.5 H0 15.5 16 H1 D0 0.08 0.02 20.5 0.72 0.80 16.5 0.61 0.63 0.65 0.15 0.157 0.16 25 3.8 4 4.2 t 0.9 L 11 l1 3 delta P -1 0.98 0.035 0.43 0.11 1 -0.04 0.04 13/15 Revision history 5 STD2NC45-1 - STQ1NC45R-AP Revision history Table 8. 14/15 Revision history Date Revision Changes 21-Jun-2004 2 Complete version 12-Jul-2006 3 New template STD2NC45-1 - STQ1NC45R-AP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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