STS5DNF20V N-CHANNEL 20V - 0.030 Ω - 5A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET ■ ■ ■ ■ TYPE VDSS RDS(on) ID STS5DNF20V 20 V < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V ) 5A TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR DRIVE ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN PORTABLE/DESKTOP PCs ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 20 V Drain-gate Voltage (RGS = 20 kΩ) 20 V ± 12 V ID Drain Current (continuous) at TC = 25°C Single Operation 5 A ID Drain Current (continuous) at TC = 100°C Single Operation 3 A IDM(•) Gate- source Voltage Drain Current (pulsed) 20 A Ptot Total Dissipation at TC = 25°C Dual Operation 1.6 W Ptot Total Dissipation at TC = 25°C Single Operation 2 W (•) Pulse width limited by safe operating area. August 2002 . 1/8 STS5DNF20V THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Single Operation Thermal Resistance Junction-ambient Dual Operation Max. Operating Junction Temperature Storage Temperature Max Max 62.5 78 -55 to 150 -55 to 150 °C/W °C/W °C °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 12V V(BR)DSS Min. Typ. Max. 20 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 4.5 V VGS = 2.7 V ID = 2.5 A ID = 2.5 A Min. Typ. 0.6 V 0.030 0.037 0.040 0.045 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter Test Conditions Min. gfs (*) Forward Transconductance VDS=15 V ID = 2.5 A 10 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V f = 1 MHz, VGS = 0 460 200 50 pF pF pF STS5DNF20V ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 2.5 A VDD = 10 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) 7 33 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 16V ID= 5A VGS=4.5V (see test circuit, Figure 2) 8.5 1.8 2.4 11.5 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 2.5 A VDD = 10 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) 27 10 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 5 A Min. Typ. VGS = 0 di/dt = 100A/µs ISD = 5 A VDD = 10 V Tj = 150°C (see test circuit, Figure 3) 26 13 1 Max. Unit 5 20 A A 1.2 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS5DNF20V Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS5DNF20V Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics . . . 5/8 STS5DNF20V Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STS5DNF20V SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS5DNF20V Information furnished is believed to be accurate and reliable. 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