STS5PF30L P-channel 30V - 0.045Ω - 5A SO-8 STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STS5PF30L 30V <0.055Ω 5A ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold drive ■ Standard outline for easy automated surface mount assembly S0-8 Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order code Part number Marking Package Packaging STS5PF30L S5PF30L SO-8 Tape & reel February 2007 Rev 4 1/12 www.st.com 12 Contents STS5PF30L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STS5PF30L 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (vgs = 0) 30 V VGS Gate- source voltage ±16 V ID Drain current (continuous) at TC = 25°C 5 A ID Drain current (continuous) at TC = 100°C 4 A Drain current (pulsed) 20 A Total dissipation at TC = 25°C dual operating 2.5 W -55 to 150 °C 150 °C IDM (1) PTOT TJ Junction temperature Storage temperature range Tstg 1. Pulse width limited by safe operating area Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed Table 2. Rthj-a TL Thermal data (1) Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose 50 °C/W 300 °C 1. Mounted on FR-4 board (t≤10sec) 3/12 Electrical characteristics 2 STS5PF30L Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS = 0 30 Unit V µA VDS=Max rating, TC=125°C 10 µA ±100 nA 1.6 2.5 V 0.045 0.065 0.055 0.075 Ω Ω IGSS Gate-body leakage current (VDS = 0) VGS = ± 16V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 2.5A 1 Dynamic Parameter gfs(1) Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS= 15V, ID =2.5A VDS = 25V, f = 1 MHz, VGS = 0 VDD = 24V, ID = 5A, VGS = 5V (see Figure 14) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5. 4/12 Max. 1 Zero gate voltage Drain current (VGS = 0) Symbol Typ. VDS = Max rating IDSS Table 4. Min. Min. Typ. Max. Unit 10 S 1350 pF 490 pF 130 pF 12.5 16 nC 5 nC 3 nC STS5PF30L Electrical characteristics Table 5. Symbol Switching times Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=15 V, ID=2.5A, RG=4.7Ω, VGS= 4.5V (see Figure 13) 25 35 ns ns td(off) tf Turn-off Delay Time Fall Time VDD=15 V, ID=2.5A, RG=4.7Ω, VGS= 4.5V (see Figure 13) 125 35 ns ns Table 6. Symbol ISD Source drain diode Parameter Test conditions Min Typ. Max Unit Source-drain current 5 A ISDM (1) Source-drain current (pulsed) 20 A VSD (2) Forward on voltage ISD = 5A, VGS = 0 1.2 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5A, VDD = 15V di/dt = 100A/µs, Tj = 150°C (see Figure 15) trr Qrr IRRM 45 36 1.6 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/12 Electrical characteristics STS5PF30L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STS5PF30L Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/12 Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for diode recovery behavior 8/12 STS5PF30L Figure 14. Gate charge test circuit STS5PF30L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STS5PF30L SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 3.8 4.0 0.14 L 0.4 1.27 0.015 S 0.244 0.050 F M 10/12 MIN. 0.6 0.157 0.050 0.023 8 (max.) STS5PF30L 5 Revision history Revision history Table 7. Revision history Date Revision 06-Feb-2007 4 Changes The document has been reformatted 11/12 STS5PF30L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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