STTH802CT/CB/CFP ® HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 4A A1 VRRM 200 V A2 Tj (max) 175 °C VF (max) 0.95 V trr (max) 20 ns K FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ Suited for SMPS Low losses Low forward and reverse recovery times High surge current capability High junction temperature Insulated package: TO-220FPAB K A1 A2 A2 K A1 TO-220AB STTH802CT TO-220FPAB STTH802CFP K DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters. Packaged in DPAK, TO-220AB or TO-220FPAB. This device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. K A2 A1 DPAK STTH802CB ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) RMS forward current TO-220AB / TO-220FPAB / DPAK 10 A Average forward current δ =0.5 TO-220AB / DPAK Tc = 155°C Per diode 4 A TO-220FPAB Tc = 145°C TO-220AB / DPAK Tc = 150°C Per device 8 A TO-220FPAB Tc = 130°C 50 A - 65 + 175 °C 175 °C IF(AV) IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Maximum operating junction temperature April 2002 - Ed: 1A tp = 10 ms Sinusoidal 1/8 STTH802/CT/CB/CFP THERMAL PARAMETERS Symbol Parameter Rth (j-c) Junction to case TO-220AB / DPAK Maximum Unit 4.0 °C/W Per diode TO-220FPAB TO-220AB / DPAK Coupling Rth (j-c) 6.5 Total 2.5 TO-220FPAB 5 TO-220AB / DPAK 1 TO-220FPAB °C/W 3.5 When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter IR* Tests conditions Reverse leakage current VF** Tj = 25°C Min. VR = VRRM Tj = 125°C Forward voltage drop Typ. 2 Tj = 25°C IF = 4 A Tj = 125°C IF = 4 A Tj = 25°C IF = 8 A Tj = 125°C IF = 8 A Max. Unit 4 µA 40 1.1 0.81 V 0.95 1.25 0.95 1.1 Pulse test: * tp = 5ms, δ < 2% ** tp = 380µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.80 x IF(AV) + 0.037 IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter trr Reverse recovery time Tj = 25°C tfr Forward recovery time VFP Forward recovery voltage 2/8 Tests conditions Min. Typ. Max. Unit IF = 0.5 A Irr = 0.25 A IR = 1A 13 20 ns Tj = 25°C IF = 4 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 50 ns Tj = 25°C IF = 4 A dIF/dt = 100 A/µs 2.4 V STTH802/CT/CB/CFP Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Peak current versus form factor (per diode). IM(A) PF(av)(W) 60 5 δ = 0.05 δ = 0.2 δ = 0.1 T δ = 0.5 50 4 P = 5W δ=tp/T δ=1 tp 40 3 30 2 20 T 1 P = 10W 10 IF(av)(A) δ=tp/T 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 tp 4.0 4.5 5.0 P = 2W δ 0.1 0.2 0 0.0 Fig. 3: Forward voltage drop versus forward current (per diode). 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB, DPAK). Zth(j-c) / Rth(j-c) IFM(A) 1.0 100.0 Tj=125°C Typical values 10.0 0.3 δ = 0.5 Tj=125°C Maximum values δ = 0.2 Tj=25°C Maximum values δ = 0.1 1.0 T Single pulse tp(s) VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 Fig. 4-2: Relative variation of thermal impedance junction to case versus duration (TO-220FPAB). 0.1 1.E-03 1.E-02 δ=tp/T 1.E-01 tp 1.E+00 Fig. 5-1: Non repetitive surge peak forward current versus overload duration per diode (TO-220AB, DPAK). Zth(j-c) / Rth(j-c) IM(A) 1.0 70 δ = 0.5 60 δ = 0.2 50 δ = 0.1 40 Tc=25°C 30 Tc=75°C 0.1 Single pulse 10 tp(s) δ=tp/T 0.0 1.E-03 1.E-02 1.E-01 1.E+00 Tc=125°C 20 T IM t tp 1.E+01 t(s) δ=0.5 0 1.E-03 1.E-02 1.E-01 1.E+00 3/8 STTH802/CT/CB/CFP Fig. 5-2: Non repetitive surge peak forward current versus overload duration per diode (TO-220FPAB). Fig. 6: Average forward current versus ambient temperature (δ = 0.5, per diode). IM(A) IF(av)(A) 60 5.0 4.5 50 TO-220AB/DPAK Rth(j-a)=Rth(j-c) 4.0 3.5 40 3.0 Tc=25°C 30 TO-220FPAB 2.5 Tc=75°C 2.0 20 1.5 Tc=125°C 10 DPAK (S=0.5cm²) Rth(j-a)=70°C:W 1.0 IM t 0.5 t(s) δ=0.5 0 1.E-03 Tamb(°C) 0.0 1.E-02 1.E-01 0 1.E+00 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). 25 50 75 100 125 150 175 Fig. 8: Reverse recovery charges versus dIF/dt (90% confidence, per diode). QRR(nC) C(pF) 1000 100 IF=4A VR=200V Tj=125°C F=1MHz Vosc=30mVRMS Tj=25°C 100 dIF/dt(A/µs) VR(V) 10 10 1 10 100 10 1000 Fig. 9: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). 100 1000 Fig. 10: Dynamic parameters versus junction temperature. IRM(A) QRR; IRM [Tj] / QRR; IRM [Tj = 125°C] 100.0 1.4 IF=4A VR=200V Tj=125°C IF=4A VR=200V 1.2 1.0 10.0 0.8 IRM 0.6 1.0 QRR 0.4 0.2 dIF/dt(A/µs) Tj(°C) 0.1 0.0 10 4/8 100 1000 0 25 50 75 100 125 150 STTH802CT/CB/CFP Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) for DPAK. Rth(j-a)(°CW) 100 90 80 70 60 50 40 30 20 10 S(cm²) 0 0 2 4 6 8 10 12 14 16 18 20 PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 M G1 E G Inches Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 F Millimeters Min. 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 5/8 STTH802CT/CB/CFP PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. 6.7 6.7 3 3 1.6 1.6 2.3 6/8 2.3 Inches Min. Max Min. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 FOOTPRINT Millimeters 0.80 typ. 0.031 typ. L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° STTH802/CT/CB/CFP PACKAGE MECHANICAL DATA TO-220FPAB DIMENSIONS REF. A B H Dia L6 L2 L7 L3 L5 D F1 F2 F E G1 G ■ ■ ■ ■ ■ Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 L4 ■ Millimeters 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 Ordering code Marking Package Weight Base qty Delivery mode STTH802CT STTH802CT TO-220AB 2.23 g 50 Tube STTH802CB STTH802CB DPAK 0.3 g 75 Tube STTH802CB-TR STTH802CB DPAK 0.3 g 2500 Tape & reel STTH802CFP STTH802CFP TO-220FPAB 2.0 g 50 Tube Cooling method: by conduction (method C) Recommended torque value (TO-220AB): 0.8 N.m Maximum torque value (TO-220AB): 1.0 N.m Recommended torque value (TO-220FPAB): 0.55 N.m Maximum torque value (TO-220FPAB): 0.7 N.m Epoxy meets UL 94,V0 7/8 STTH802CT/CB/CFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8