STPS640CT/CF/CB POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x3A A1 VRRM Tj (max) 40 V 150 °C A2 VF (max) 0.57 V K K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD DROP VOLTAGE LOW CAPACITANCE LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE (tape and reel option: -TR) A2 A1 DPAK STPS640CB DESCRIPTION Dual Schottky rectifier suited to Switch Mode Power Supplies and other Power Converters. This device is intended for use in low and medium voltage operation, and particulary, in high frequency circuitries where low switching losses are required (free wheeling and polarity protection). A1 K A2 TO-220AB STPS640CT A1 K A2 ISOWATT220AB STPS640CF ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit 40 V VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current TO-220AB / ISOWATT220AB 10 A Average forward current δ = 0.5 DPAK TO-220AB Tc = 135°C 6 3 A ISOWATT220AB Tc = 130°C DPAK Tc = 120°C 75 A 1 - 65 to + 150 A °C 150 °C 10000 V/µs IF(AV) IFSM Surge non repetitive forward current IRRM Tstg Repetitive peak reverse current Storage temperature range Tj dV/dt tp = 10 ms Sinusoidal tp = 2 µs F = 1kHz square Maximum operating junction temperature Critical rate of rise of reverse voltage August 1999 - Ed: 4A 1/6 STPS640CT/CF/CB THERMAL RESISTANCES Symbol Rth (j-c) Rth(c) Parameter Junction to case Coupling TO-220AB/ DPAK Per diode Total ISOWATT220AB Per diode Total TO-220AB ISOWATT220AB Value Unit 5.5 3 7.5 5.2 °C/W 0.5 3 °C/W Max. Unit 100 µA 10 mA V When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Tests Conditions Reverse leakage current Min. Tj = 25°C Typ. VR = VRRM Tj = 125°C VF * Pulse test : Forward voltage drop 2 Tj = 25°C IF = 3 A 0.63 Tj = 25°C Tj = 125°C IF = 6 A IF = 3 A 0.5 0.84 0.57 Tj = 125°C IF = 6 A 0.67 0.72 * tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.42 x IF(AV) + 0.050 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 2.50 δ = 0.05 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0.0 0.5 1.0 2/6 Fig. 2: Average current versus ambient temperature (δ = 0.5, per diode). IF(av)(A) δ = 0.1 δ = 0.2 4.0 δ = 0.5 3.5 TO-220AB/DPAK Rth(j-a)=Rth(j-c) 3.0 δ=1 ISOWATT220AB 2.5 2.0 Rth(j-a)=15°C/W 1.5 T T δ=tp/T IF(av) (A) 1.5 2.0 2.5 3.0 1.0 0.5 tp 3.5 4.0 0.0 δ=tp/T 0 tp 25 Tamb(°C) 50 75 100 125 150 STPS640CT/CF/CB Fig. 3-1: Non repetitive surge peak forward current versus overload duration. (Maximum values, per diode) (TO-220AB/ DPAK). IM(A) 45 40 35 30 25 20 15 IM 10 5 0 1E-3 Fig. 3-2: Non repetitive surge peak forward current versus overload duration. (Maximum values, per diode) (ISOWATT220AB). IM(A) 40 35 30 25 Tc=75°C Tc=100°C t 15 1E-1 1E+0 Fig. 4.1: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AB / DPAK). 1E-2 1E-1 1E+0 Zth(j-c)/Rth(j-c) 1.0 0.8 0.8 δ = 0.5 0.6 δ = 0.2 δ = 0.5 0.4 δ = 0.1 0.2 t(s) Fig. 4-2: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AB). Zth(j-c)/Rth(j-c) 0.4 t δ=0.5 0 1E-3 1.0 0.6 Tc=130°C IM 5 t(s) 1E-2 Tc=75°C Tc=100°C 10 Tc=135°C δ=0.5 20 δ = 0.2 T Single pulse δ=tp/T tp(s) 0.0 1E-3 1E-2 tp 1E-1 T δ = 0.1 0.2 tp(s) Single pulse 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 1E-3 1E-2 δ=tp/T 1E-1 1E+0 tp 1E+1 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) IR(A) 500 1E-2 F=1MHz Tj=25°C Tj=150°C Tj=125°C 1E-3 100 Tj=100°C 1E-4 Tj=75°C VR(V) 1E-5 0 5 10 15 20 25 30 35 40 10 VR(V) 1 2 5 10 20 50 3/6 STPS640CT/CF/CB Fig. 7: Forward voltagedrop versus forwardcurrent (maximum values, per diode). 10.0 Fig. 8: Thermal resistance junctionto ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). Rth(j-a) (°C/W) IFM(A) 80 70 60 Typical values Tj=150°C 50 1.0 Tj=125°C 40 30 20 VFM(V) 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 10 0.7 0.8 0 0.9 1.0 S(Cu) (cm ) 0 4 8 12 16 20 24 28 32 36 PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G 4/6 REF. Millimeters Min. Max. Inches Min. Max. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 40 STPS640CT/CF/CB PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. Millimeters Min. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0° 8° Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0° 8° FOOTPRINT DIMENSIONS (in millimeters) 6.7 6.7 3 3 1.6 1.6 2.3 2.3 5/6 STPS640CT/CF/CB PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. Millimeters Min. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 Ordering type Marking Package Weight Base qty Delivery mode STPS640CT STPS640CT TO-220AB 2.20g 50 Tube STPS640CB S640C DPAK 0.30g 75 Tube STPS640CB-TR S640C DPAK 0.30g 2500 Tape and reel STPS640CF STPS640CF ISOWATT220AB 2.08g 50 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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