STU7NA80 ® N - CHANNEL 800V - 1.3Ω - 6.5A - Max220 FAST POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STU7NA80 800 V < 1.5 Ω 6.5 A ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED DATA AT 100 oC LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 Max220TM DESCRIPTION The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CONSUMER AND INDUSTRIAL LIGHTING ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR Parameter Value Unit Drain-source Voltage (V GS = 0) 800 V Drain- gate Voltage (R GS = 20 kΩ) 800 V Gate-source Voltage ± 30 V ID Drain Current (continuous) at T c = 25 o C 6.5 A ID Drain Current (continuous) at T c = 100 o C 4.3 A Drain Current (pulsed) 26 A V GS I DM (•) P tot T stg Tj o Total Dissipation at T c = 25 C 145 W Derating Factor 1.16 W/ o C Storage Temperature Max. Operating Junction Temperature -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area June 1998 1/5 STU7NA80 THERMAL DATA R thj-case Rthj-amb R thc-sink TI Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose o 0.86 30 0.1 300 Max Max Typ C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) 6.5 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) 220 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 800 VGS = 0 Unit V o T c = 100 C V GS = ± 30 V 250 1000 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10 V I D = 3.5 A ID(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 2.25 3 3.75 V 1.3 1.5 Ω 6.5 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 3.5 A V GS = 0 Min. Typ. 4.5 7.2 1770 190 50 Max. Unit S 2300 250 70 pF pF pF STU7NA80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 400 V 3.5 A R G = 4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V Min. ID = Typ. Max. Unit 20 30 30 45 ns ns 75 10 34 110 nC nC nC Typ. Max. Unit 18 20 25 27 30 40 ns ns ns Typ. Max. Unit 6.5 26 A A V GS = 10 V ID = 8 A V GS = 10 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 640 V R G = 4.7 Ω Min. ID = 7 A V GS = 10 V SOURCE DRAIN DIODE Symbol I SD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Conditions Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 7 A I SD = 7 A V DD = 100 V V GS = 0 di/dt = 100 A/µs o T j = 150 C 1.6 V 850 ns 17 µC 40 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STU7NA80 Max220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.2 2.4 0.087 0.094 A2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.18 0.023 D 15.9 16.3 0.626 0.641 D1 9 9.35 0.354 0.368 D2 0.8 1.2 0.031 0.047 D3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 E 10.05 10.35 0.396 0.407 L 13.2 13.6 0.520 0.535 L1 3 3.4 0.118 0.133 D1 D2 A1 A2 A C D3 b b2 b1 D e E L1 L P011R 4/5 STU7NA80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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