SUD50N06-07L N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0074 at VGS = 10 V 96 0.0088 at VGS = 4.5 V 88 V(BR)DSS (V) 60 • TrenchFET® Power MOSFETS • 175 °C Junction Temperature RoHS COMPLIANT D TO-252 G Drain Connected to Tab G D S Top View S Ordering Information: SUD50N06-07L-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) 67c IDM Pulsed Drain Current Single Pulse Avalanche Current a Single Pulse Repetitive Avalanche Energy L = 0.1 mH Power Dissipation TC = 25 °C Operating Junction and Storage Temperature Range V 96c ID TC = 100 °C Unit A 100 IAS 45 EAS 101 mJ PD 136 W TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Symbol t ≤ 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Notes: a. Duty cycle ≤ 1 %. b. Surface Mounted on 1" FR4 board. c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A. 1/5 www.freescale.net.cn Unit °C/W SUD50N06-07L N-Channel 60 V (D-S) 175 °C MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 VDS = 60 V, VGS = 0 V, TJ = 175 °C 150 ID(on) VDS = 5 V, VGS = 10 V 50 VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea rDS(on) Forward Transconductance gfs 0.0122 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.0148 0.0071 20 nA µA 0.0074 VGS = 10 V, ID = 20 A, TJ = 125 °C VDS = 15 V, ID = 15 A V A 0.0061 VGS = 4.5 V, ID = 20 A a 3 Ω 0.0088 80 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec 5800 VGS = 0 V, VDS = 25 V, f = 1 MHz Gate-Source Charge c Qgs pF 300 Qg c 450 96 VDS = 30 V, VGS = 10 V, ID = 50 A 144 19 nC Gate-Drain Charge Qgd 20 Gate Resistance Rg 1.5 td(on) 15 25 13 20 62 95 14 25 Turn-On Delay Timec c tr Rise Time Turn-Off Delay Time c Fall Timec td(off) VDD = 30 V, RL = 0.6 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω tf Ω ns b Source-Drain Diode Ratings and Characteristics (TC = 25 °C) IS 50 Pulsed Current ISM 100 Forward Voltagea VSD IF = 30 A, VGS = 0 V 0.90 1.50 V trr IF = 30 A, di/dt = 100 A/µs 37 55 ns Continuous Current Reverse Recovery Time A Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/5 www.freescale.net.cn SUD50N06-07L N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C unless noted 120 120 VGS = 10 thru 4 V 100 I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 80 60 40 TC = 125 °C 20 20 25 °C 3V - 55 °C 0 0.0 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 200 4.0 0.015 TC = - 55 °C 25 °C 0.012 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 160 125 °C 120 80 40 0 0.009 VGS = 4.5 V 0.006 VGS = 10 V 0.003 0.000 0 10 20 30 40 50 60 0 60 80 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 100 10 V GS - Gate-to-Source Voltage (V) 7000 Ciss C - Capacitance (pF) 40 VGS - Gate-to-Source Voltage (V) 8000 6000 5000 4000 3000 2000 Coss 1000 Crss 0 0 3/5 20 VDS = 30 V ID = 50 A 8 6 4 2 0 10 20 30 40 50 60 0 20 40 60 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 80 www.freescale.net.cn 100 SUD50N06-07L N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C unless noted 2.0 100 VGS = 10 V ID = 20 A I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 1.7 1.4 1.1 TJ = 150 °C TJ = 25 °C 10 0.8 0.5 - 50 1 TJ - Junction Temperature (°C) 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage - 25 0 25 50 75 100 125 150 175 1.5 THERMAL RATINGS 200 125 100 Limited by rDS(on) 10 µs 100 µs I D - Drain Current (A) I D - Drain Current (A) 100 75 50 Limited By Package 25 25 50 75 1 ms 10 ms dc, 100 ms 1 TC = 25 °C Single Pulse 0 0 10 100 125 150 175 0.1 0.1 TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature 1 10 VDS - Drain-to-Source Voltage (V) 100 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 Normalized Thermal Transient Impedance, Junction-to-Case 4/5 www.freescale.net.cn 1 SUD50N06-07L N-Channel 60 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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