New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V -8 • TrenchFET® Power MOSFET • 100 % UIS Tested RoHS 26 COMPLIANT APPLICATIONS 25.5 • Backlight Inverter for LCD Display • Full Bridge DC/DC Converter TO-252-4L D-PAK D D Top View Drain Connected to Tab S1 G1 G1 G2 S1 S2 G 2 S2 N-Channel MOSFET Ordering Information: SUD50NP04-77P-T4-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 40 - 40 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C 8a - 8a a - 8a a, b, c - 8a, b, c b, c - 7.4b, c - 30 8 ID 8 TA = 70 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Current 8a IS L = 0.1 mH TC = 70 °C TA = 25 °C 7 15 2.45 11.25 10.8 24 6.9 15.3 5.2b, c 5.6b, c 3.3b, c 3.6b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range - 4.6b, c - 30 IAS PD A 8a EAS TC = 25 °C Maximum Power Dissipation - 4.3b, c 30 ISM Pulsed Source-Drain Current Single Pulse Avalanche Energy 7 30 IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current V ± 20 TC = 70 °C TA = 25 °C Unit mJ W - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) P-Channel Symbol Typ. Max. Typ. Max. t ≤ 10 s RthJA 20 24 18 22 Steady State RthJC 9.4 11.5 4.3 5.2 Parameter Unit °C/W Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 s. d. Maximum under Steady State conditions is 60 °C/W (N-Channel) and 52 °C/W (P-Channel). Document Number: 73989 S-80109-Rev. B, 21-Jan-08 www.vishay.com 1 New Product SUD50NP04-77P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 40 VGS = 0 V, ID = - 250 µA P-Ch - 40 ID = 250 µA N-Ch 44 ID = - 250 µA P-Ch - 41 ID = 250 µA N-Ch - 5.5 V mV/°C ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 1.4 2.5 VDS = VGS, ID = - 250 µA P-Ch - 1.4 - 2.7 VDS = 0 V, VGS = ± 20 V 4.3 N-Ch 100 P-Ch - 100 VDS = 40 V, VGS = 0 V N-Ch 1 VDS = - 40 V, VGS = 0 V P-Ch -1 VDS = 40 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 40 V, VGS = 0 V, TJ = 55 °C P-Ch VDS = 5 V, VGS = 10 V N-Ch 10 VDS = - 5 V, VGS = - 10 V P-Ch - 10 V nA µA - 10 A VGS = 10 V, ID = 5 A N-Ch 0.0305 0.037 VGS = - 10 V, ID = - 5 A P-Ch 0.030 0.040 VGS = 4.5 V, ID = 4 A N-Ch 0.037 0.046 VGS = - 4.5 V, ID = - 4 A P-Ch 0.036 0.050 VDS = 15 V, ID = 5 A N-Ch 22 VDS = - 15 V, ID = - 5 A P-Ch 20 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Crss Qg N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz 640 P-Ch 1555 N-Ch 73 P-Ch 176 N-Ch 41 P-Ch 142 pF VDS = 20 V, VGS = 10 V, ID = 5 A N-Ch 11.7 20 VDS = - 20 V, VGS = - 10 V, ID = - 5 A P-Ch 38.5 60 N-Ch 5.3 9.0 N-Channel VDS = 20 V, VGS = 4.5 V, ID = 5 A P-Ch 17 27 N-Ch 1.9 P-Ch 4.2 N-Ch 1.7 P-Ch 7.0 Qgs Gate-Drain Charge Qgd P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A Gate Resistance Rg f = 1 MHz www.vishay.com 2 N-Ch N-Ch 2.2 P-Ch 3.0 nC Ω Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product SUD50NP04-77P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamic Symbol Typ.a Max. N-Ch 9 18 P-Ch 10 20 N-Ch 11 20 P-Ch 14 25 Test Conditions Min. Unit a Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tf P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) N-Ch 14 25 P-Ch 36 60 N-Ch 8 16 P-Ch 10 20 N-Ch 18 30 80 P-Ch 47 N-Ch 14 25 P-Ch 60 110 N-Ch 14 25 P-Ch 35 60 N-Ch 10 20 P-Ch 13 25 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage ISM VSD N-Ch 8 P-Ch -8 N-Ch 30 P-Ch - 30 IS = 2 A N-Ch 0.805 1.2 IS = - 2 A P-Ch - 0.76 - 1.2 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 2 A, di/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta P-Channel IF = - 2 A, di/dt = - 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A N-Ch 19 30 P-Ch 22 40 N-Ch 14 25 P-Ch 22 40 N-Ch 13 P-Ch 15 N-Ch 6 P-Ch 7 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73989 S-80109-Rev. B, 21-Jan-08 www.vishay.com 3 New Product SUD50NP04-77P Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 5 VGS = 10 thru 5 V 4V 4 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 3 TC = 25 °C 2 6 1 TC = 125 °C 3V 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 800 0.060 640 0.052 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) Ciss 0.044 VGS = 4.5 V 0.036 VGS = 10 V 480 320 Coss 0.028 160 0.020 0 0 6 12 18 24 Crss 0 30 6 12 30 Capacitance 1.8 10 ID = 5 A ID = 5 A VDS = 10 V 8 VDS = 30 V 4 2 1.4 (Normalized) VDS = 20 V 6 0 0.0 VGS = 10 V 1.6 r DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current VGS = 4.5 V 1.2 1.0 0.8 2.5 5.0 7.5 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 18 10.0 12.5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product SUD50NP04-77P Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 100 ID = 5 A TJ = 150 °C 0.16 r DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.12 0.08 TA = 125 °C 0.04 0.01 TA = 25 °C 0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 100 0.2 ID = 250 µA 80 ID = 5 mA Power (W) V GS(th) Variance (V) 4 VSD - Source-to-Drain Voltage (V) 0.4 0.0 2 - 0.2 60 40 - 0.4 20 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.0001 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 100 Limited by rDS(on)* 80 I D - Drain Current (A) Power (W) 10 60 40 100 µs 1 ms 1 10 ms 100 ms 10 s 0.1 20 DC TA = 25 °C Single Pulse 0 0.0001 0.001 0.01 0.1 Time (s) Single Pulse Power, Junction-to-Case 1 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73989 S-80109-Rev. B, 21-Jan-08 www.vishay.com 5 New Product SUD50NP04-77P Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 7 Limited by rDS(on)* 5 I D - Drain Current (A) 1 1 ms 10 ms 100 ms, DC I D - Drain Current (A) 100 µs 10 0.1 4 3 1 TC = 25 °C Single Pulse 0 0.1 1 10 0 100 50 75 100 125 TA - Ambient Temperature (°C) Safe Operating Area, Junction-to-Case Current Derating**, Junction-to-Ambient 15 2.5 12 2.0 Package Limited 9 25 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Power (W) I D - Drain Current (A) 0.01 0.01 6 3 150 1.5 1.0 0.5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Current Derating**, Junction-to-Case Power Derating, Junction-to-Ambient 150 15 Power (W) 12 9 6 3 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Case www.vishay.com 6 150 ** The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product SUD50NP04-77P Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 60 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73989 S-80109-Rev. B, 21-Jan-08 www.vishay.com 7 New Product SUD50NP04-77P Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 5 VGS = 10 thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 3V 6 3 TJ = 25 °C 2 1 TJ = 125 °C 0 0.0 0.5 1.0 1.5 2.0 TJ = - 55 °C 0 0.0 2.5 0.8 VDS - Drain-to-Source Voltage (V) 3.2 4.0 Transfer Characteristics 0.050 2500 0.044 2000 Ciss C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 2.4 VGS - Gate-to-Source Voltage (V) Output Characteristics VGS = 4.5 V 0.038 1.6 0.032 VGS = 10 V 1500 1000 Coss 0.026 500 0.020 0 Crss 0 6 12 18 24 30 0 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.8 ID = 5 A ID = 5 A VDS = 10 V VGS = 10 V 1.6 8 VDS = 20 V 6 VDS = 30 V 4 2 1.4 (Normalized) r DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 VGS = 4.5 V 1.2 1.0 0.8 0 0 www.vishay.com 8 8 16 24 32 40 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product SUD50NP04-77P Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 100 TJ = 150 °C r DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5 A TJ = 25 °C 10 0.09 0.06 TA = 125 °C 0.03 TA = 25 °C 0 1 0.0 0.3 0.6 0.9 1.2 0 1.5 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 120 0.7 0.5 96 ID = 250 µA Power (W) V GS(th) Variance (V) 2 VSD - Source-to-Drain Voltage (V) 0.3 ID = 5 mA 0.1 - 0.1 - 0.3 - 50 72 48 24 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 120 Limited by rDS(on)* 96 I D - Drain Current (A) Power (W) 10 72 48 1 ms 10 ms 100 ms 1 1s 10 s 0.1 24 DC TA = 25 °C Single Pulse 0 0. 00 1 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Case 10 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73989 S-80109-Rev. B, 21-Jan-08 www.vishay.com 9 New Product SUD50NP04-77P Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 7 Limited by rDS(on)* 1 ms 10 ms 100 ms DC 1 I D - Drain Current (A) I D - Drain Current (A) 6 100 µs 10 0.1 4 3 1 TC = 25 °C Single Pulse 0 0.1 1 100 10 0 25 50 75 100 125 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified TA - Ambient Temperature (°C) Safe Operating Area, Junction-to-Case Current Derating**, Junction-to-Ambient 22 3.5 18 2.8 13 2.1 Power (W) I D - Drain Current (A) 0.01 0.01 Package Limited 9 150 1.4 0.7 4 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Current Derating**, Junction-to-Case Power Derating, Junction-to-Ambient 175 35 Power (W) 28 21 14 7 ** The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Case www.vishay.com 10 175 upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product SUD50NP04-77P Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 t2 1. Duty Cycle, D = 0.05 t1 t2 2. Per Unit Base = RthJA = 52 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73989. Document Number: 73989 S-80109-Rev. B, 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1