SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 JANUARY 1996 SXTA42 ✪ COMPLEMENTARY TYPE SXTA92 PARTMARKING DETAIL SID C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 6 V 500 mA 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 300 V IC=100µA, IE=0 V(BR)CEO 300 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=100µA, IC=0 Collector Cut-Off Current ICBO 0.1 µA VCB=200V, IE=0 Emitter Cut-Off Current IEBO 0.1 µA VEB=6V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=20mA, IB=2mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=20mA, IB=2mA* Static Forward Current Transfer Ratio hFE 25 40 40 Transition Frequency fT 50 Output Capacitance Cobo IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* 6 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 306