SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 FZT593 ✪ C COMPLEMENTARY TO FZT493 PARTMARKING DETAIL - FZT593 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO -120 V IC=-100µ A V(BR)CEO -100 V IC=-10mA* V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-100V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Cut-Off Current ICES -100 nA VCES=-100V Saturation Voltages VCE(sat) -0.2 -0.3 V V IC=-250mA,IB=-25mA* IC=-500mA IB=-50mA* VBE(sat) -1.1 V IC=-500mA,IB=-50mA* Base-Emitter Turn-on Voltage VBE(on) -1.0 V IC=-1mA, VCE=-5V* Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance Cobo 100 100 100 50 IC=-1mA, VCE=-5V IC=-250mA,VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* 300 50 5 MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT593 datasheet 3 - 196