8M x 8 SRAM MODULE SYS88000RKX - 70/85/10/12 Issue 1.5: April 2001 Description Features The SYS88000RKX is a plastic 64Mbit Static RAM Module housed in a standard 38 pin Single In-Line package organised as 8M x 8 with access times of 85,100, or 120 ns. The module is constructed using sixteen 512Kx8 SRAMs in TSOPII packages mounted onto both sides of an FR4 epoxy substrate. This offers an extremely high PCB packing density. The device is offered in standard and low power versions, with the -L module having a low voltage data retention mode for battery backed applications. On board buffering is provided to reduce output capacitance. Note: CS and OE on the module, should be used with care to avoid on and off board bus contention. Block Diagram A19 A20 A21 A22 512K X 8 SRAM T/R BI-DIRECTIONAL DRIVERS 4 TO 16 DECODER D0 - D7 A0~7 B0~7 74FCT245 OE 512K X 8 SRAM CS Pin Functions Address Inputs Data Input/Output Chip Select Write Enable Output Enable No Connect Power (+5V) Ground Access Times of 85/100/120 ns. • Low Power Disapation: Operating 935 mW (Max.) Standby -L Version 11 mW (Max.) • 5 Volt Supply ± 10%. • Completely Static Operation. • Equal Access and Cycle Times. • Low Voltage VCC Data Retention. • • On-board Decoding & Capacitors. 38 Pin Single-In-Line package. • Upgrade from SYS84000RKX (32Mbit). Pin Definition OE WE A0 - A18 • A0 ~ A22 D0 - D7 A22 A20 Vcc WE D2 D3 D0 A1 A2 A3 A4 GND D5 A10 A11 A5 A13 A14 A19 CS A15 A16 A12 A18 A6 D1 GND A0 A7 A8 A9 D7 D4 D6 A17 Vcc OE A21 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 D0 ~ D7 CS WE Package Details OE NC VCC GND Plastic 38 pin Single-In-Line (SIP) ISSUE 1.5 : April 2001 SYS88000RKX - 85/10/12 Absolute Maximum Ratings (1) Parameter Voltage on any pin relative to VSS Power Dissipation Storage Temperature Symbol Min Typ Max Unit VT PT TSTG -0.3 -55 1.0 - 7.0 125 V W o C Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temperature (Commercial) (Industrial) Symbol Min Typ Max Unit VCC VIH VIL TA TAI 4.5 2.2 -0.3 0 -40 5.0 - 5.5 VCC+0.3 0.8 70 85 V V V o C o C TA 0 to 70 oC DC Electrical Characteristics (VCC=5V±10%) Parameter I/P Leakage Current Symbol Test Condition Min Typ max Unit ILI 0V < VIN < VCC -16 - 16 µA Output Leakage Current ILO CS = VIH, VI/O = GND to VCC -16 - 16 µA Operating Current ICC1 Min. Cycle, CS = VIL,VIL<VIN<VIH - - 170 mA TTL levels ISB1 CS = VIH - - 48 mA CMOS levels ISB2 CS > VCC-0.2V, 0.2<VIN<VCC-0.2V - - 32 mA -L Version (CMOS) ISB3 CS > VCC-0.2V, 0.2<VIN<VCC-0.2V - - 2 mA VOL IOL = 8.0mA - - 0.4 V VOH IOH = -4.0mA 2.4 - - V Address,OE,WE Standby Supply Current Output Voltage Typical values are at VCC=5.0V,TA=25oC and specified loading. Add 800mA to -L CMOS standby currents to obtain industrial temp range parameters. Capacitance (VCC=5V±10%,TA=25oC) Parameter Input Capacitance (Address,OE,WE) I/P Capacitance (other) I/O Capacitance Note: Capacitance calculated, not measured. Symbol Test Condition CIN1 CIN2 CI/O VIN = 0V VIN = 0V VI/O = 0V 2 max Unit 128 10 160 pF pF pF SYS88000RKX - 85/10/12 ISSUE 1.5 : April 2001 AC Test Conditions Output Load * Input pulse levels: 0V to 3.0V I/O Pin 645Ω * Input rise and fall times: 5ns 1.76V * Input and Output timing reference levels: 1.5V 100pF * Output load: see diagram * VCC=5V±10% Operation Truth Table CS OE WE DATA PINS SUPPLY CURRENT MODE H X X High Impedance ISB1 , ISB2 , ISB3, ISB4 Standby L L L Invalid State ~ Invalid L L H Data Out ICC1 Read L H L Data In ICC1 Write L H H High-Impedance ICC1 High-Z Notes : H = VIH : L =VIL : X = VIH or VIL OE must not be tied low permanently. Low Vcc Data Retention Characteristics - L Version Only Parameter Symbol VCC for Data Retention VDR Data Retention Current ICCDR1 (2) Chip Deselect to Data Retention Time tCDR Operation Recovery Time tR Notes Test Condition min typ(1) max CS > VCC-0.2V VCC = 3.0V, CS > VCC-0.2V See Retention Waveform See Retention Waveform 2.0 0 5.0 - 2 - (1) Typical figures are measured at 25°C. (2) This parameter is guaranteed not tested. (3) Add 840mA to -L CMOS standby currents to obtain industrial temp range parameters. 3 Unit V mA ns ms ISSUE 1.5 : April 2001 SYS88000RKX - 85/10/12 AC OPERATING CONDITIONS Read Cycle -85 Parameter Read Cycle Time Address Access Time Chip Select Access Time Output Enable to Output Valid Output Hold from Address Change Chip Selection to Output in Low Z Output Enable to Output in Low Z Chip Deselection to O/P in High Z Output Disable to Output in High Z -10 -12 Symbol min max min max min max Unit tRC tAA tACS tOE tOH tCLZ tOLZ tCHZ tOHZ 85 11.5 1.5 1.5 0 0 85 85 50 5 5 100 11.5 1.5 1.5 0 0 100 100 55 5 5 120 11.5 1.5 1.5 0 0 120 120 60 5 5 ns ns ns ns ns ns ns ns ns Write Cycle -85 Parameter Write Cycle Time Chip Selection to End of Write Address Valid to End of Write Address Setup Time Write Pulse Width Write Recovery Time Write to Output in High Z *** Data to Write Time Overlap Data Hold from Write Time Output active from end of write *** -10 -12 Symbol min max min max min max Unit tWC tCW tAW tAS tWP tWR tWHZ tDW tDH tOW 85 75 75 0 60 5 0 40 0 5 35 - 100 80 80 0 70 5 0 45 0 5 40 - 120 100 100 0 70 5 0 45 0 5 40 - ns ns ns ns ns ns ns ns ns ns *** Theses signals are the internal Ram signals on the module and are included to assist control signal timing. 4 SYS88000RKX - 85/10/12 ISSUE 1.5 : April 2001 Read Cycle Timing Waveform (1,2) t RC Address t AA OE t OE t OH t OLZ CS t ACS Don't care. t OHZ (3) t CLZ (4,5) Dout Data Valid t CHZ (3,4,5) AC Read Characteristics Notes (1) WE is High for Read Cycle. (2) All read cycle timing is referenced from the last valid address to the first transition address. (3) tCHZ and tOHZ are defined as the time at which the outputs achieve open circuit conditions and are not referenced to output voltage levels. (4) At any given temperature and voltage condition, tCHZ (max) is less than tCLZ (min) both for a given module and from module to module. (5) These parameters are sampled and not 100% tested. Write Cycle No.1 Timing Waveform(1,4) tWC Address t WR(7) OE t AS(6) t AW t CW CS Don't Care WE t OHZ(3,9) t OW t WP(2) High-Z Dout t DW Din High-Z t DH Data Valid 5 (8) ISSUE 1.5 : April 2001 SYS88000RKX - 85/10/12 Write Cycle No.2 Timing Waveform (1,5) tWC Address t AS(6) t WR(7) t CW CS t AW t WP(2) WE tOH t WHZ(3,9) t OW High-Z Dout t DW (8) (4) Don't Care t DH High-Z Din Data Valid AC Write Characteristics Notes (1) All write cycle timing is referenced from the last valid address to the first transition address. (2) All writes occur during the overlap of CS and WE low. (3) If OE, CS, and WE are in the Read mode during this period, the I/O pins are low impedance state. Inputs of opposite phase to the output must not be applied because bus contention can occur. (4) Dout is the Read data of the new address. (5) OE is continuously low. (6) Address is valid prior to or coincident with CS and WE low, too avoid inadvertant writes. (7) CS or WE must be high during address transitions. (8) When CS is low : I/O pins are in the output state. Input signals of opposite phase leading to the output should not be applied. (9) Defined as the time at which the outputs achieve open circuit conditions and are not referenced to output voltage levels. These parameters are sampled and not 100% tested. Data Retention Waveform DATA RETENTION MODE Vcc 4.5V 4.5V tCDR tR 2.2V 2.2V V DR CS CS > Vcc -0.2V 0V 6 SYS88000RKX - 85/10/12 Package Information ISSUE 1.5 : April 2001 Dimensions in mm 97.25 max 30.25 max 4.40 max 3.50 +/- 0.50 0.50 typ. 2.54 typ Ordering Information SYS88000RKXLI - 85 Speed 85 = 85ns 10 = 100ns 12 = 120ns Temperature Range Blank = Commercial Temperature I = Industrial Temperature Power Consumption Blank = Standard L = Low Power Package RKX = Plastic 38 pin SIP Organization 88000 = 8M x 8 Memory Type SYS = Static RAM Note : Although this data is believed to be accurate the information contained herein is not intended to and does not create any warranty of merchantibility or fitness for a particular purpose. Our Products are subject to a constant process of development. Data may be changed at any time without notice. Products are not authorised for use as critical components in life support devices without the express written approval of a company director 7