Order this document by T2500FP/D SEMICONDUCTOR TECHNICAL DATA . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat Dissipation and Durability MT2 MT1 CASE 221C-02 STYLE 3 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Repetitive Peak Off-State Voltage(1) (TJ = –40 to +100°C, Gate Open) Value VDRM T2500BFP T2500DFP T2500MFP T2500NFP Unit Volts 200 400 600 800 On-State RMS Current (TC = +80°C)(2) (Full Cycle Sine Wave 50 to 60 Hz) IT(RMS) 6 Amps Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) ITSM 60 Amps I2t 40 A2s PGM 1 Watt PG(AV) 0.2 Watt IGTM 4 Amps VISO 1500 Volts TJ –40 to +100 °C Tstg –40 to +150 °C Symbol Max Unit RθJC RθCS RθJA 2.7 2.2(typ) 60 °C/W Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +80°C, Pulse Width = 1 µs) Average Gate Power (TC = +80°C, t = 8.3 ms) Peak Gate Trigger Current (Pulse Width = 10 µs) RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Range Storage Temperature Range p 20%) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case(2) Case to Sink Junction to Ambient 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Peak Off-State Current (Either Direction) (VD = Rated VDRM, TJ = 100°C, Gate Open) IDRM — — 2 mA Maximum On-State Voltage (Either Direction)* (IT = 30 A Peak) VTM — — 2 Volts Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) IGT Gate Trigger Voltage (Continuous dc) (All Quadrants) (VD = 12 Vdc, RL = 12 Ohms) (VD = VDROM, RL = 125 Ohms, TC = 100°C, All Trigger Models) VGT mA — — — — 10 20 15 30 25 60 25 60 — 0.2 1.25 — 2.5 — Volts Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 150 mA, TC = 25°C) IH — 15 30 mA Gate Controlled Turn-On Time (VD = Rated VDRM, IT = 10 A, IGT = 160 mA, Rise Time 0.1 µs) tgt — 1.6 — µs dv/dt(c) — 10 — V/µs dv/dt — 100 — V/µs p Critical Rate-of-Rise of Commutation Voltage (VD = Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms, Gate Unenergized, TC = 80°C) Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100°C) *Pulse Test: Pulse Width p 300 µs, Duty Cycle p 2%. Quadrant Definitions Electrical Characteristics of Recommended Bidirectional Switches MT2(+) Quadrant II MT2(+), G(–) Part Number MBS4991 MBS4992 VS 6 – 10 V 7.5 – 9 V IS 350 µA Max 120 µA Max VS1 – VS2 0.5 V Max 0.2 V Max MT2(+), G(+) G(–) G(+) Quadrant III Quadrant IV MT2(–), G(–) MT2(–), G(+) MT2(–) 2 General Usage Quadrant I Trigger devices are recommended for gating on Triacs. They provide: 1. Consistent predictable turn-on points. 2. Simplified circuitry. 3. Fast turn-on time for cooler, more efficient and reliable operation. Temperature Coefficient 0.02%/°C Typ Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– –B– F SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. C S P N E A Q H STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE 1 2 3 –Y– K Z J L G R D 3 PL 0.25 (0.010) M B M Y DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 ––– 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 ––– 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 CASE 221C–02 Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *T2500FP/D* T2500FP/D