TRIQUINT TGA8226

Product Data Sheet
2 - 6 GHz Gain Block Amplifier
TGA8226-SCC
Key Features and Performance
•
•
•
•
•
•
2 to 6 GHz Frequency Range
13.5 dB Gain
17 dBm Output Power at 1 dB Gain
Compression
5.5 dB Noise Figure
Operates from Single 15V Supply
1.47 x 1.85 x 0.15 mm (0.058 x 0.073 x
0.006 in.)
Description
The TriQuint TGA8226-SCC is a self biased distributed amplifier and operates from
a single 15 V supply. Four 457 um FETs produce a typical gain greater than 13.5
dB, with input and output SWRs less than 2:1. Direct cascading without additional
components is possible by using the on-chip blocking capacitors. Ground is
provided to the circuitry through vias to the backside metallization.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as thermocompression and thermosonic wirebonding processes. The TGA8226-SCC is available in chip form and is readily
assembled using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
1
Product Data Sheet
TGA8226-SCC
TYPICAL
SMALL-SIGNAL
POWER GAIN
TYPICAL
NOISE FIGURE
TYPICAL
OUTPUT POWER
P1dB
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
2
Product Data Sheet
TGA8226-SCC
TYPICAL
INPUT RETURN LOSS
TYPICAL
OUTPUT RETURN LOSS
ABSOLUTE
MAXIMUM
RATINGS
Positive supply voltage, V+…………………………………………………………………………… 18 V
Pow er dissipation, PD at (or below ) 25oC base-plate temperature *……………………………… 4.4 W
Input continuous-w ave pow er, PIN…………………………………………………………………… 23 dB
Operating Channel temperature, TCH **…………………………………………………………………
150oC
Mounting temperature (30 sec.), TM……………………………………………………………………320oC
Storage temperature range, TSTG………………………………………………………………………-65 to 150oC
Ratings over operating channel temperature range, TCH (unless otherw ise noted).
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond
those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions
for extended periods may affect device reliability.
* For operation above 25oC base-plate temperature, derate linearly at the rate of 9.2 mW/oC.
** Operating channel temperature (TCH) directly affects the device MTTF. For maximum life, it is recommended
that channel temperature be maintained at the low est possible level.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
3
Product Data Sheet
TGA8226-SCC
TYPICAL S-PARAMETERS Fre que nc y
S 21
S 11
S 12
S 22
GAIN
(GHz)
M AG
ANG(°)
MAG
ANG(°)
M AG
ANG(°)
M AG
ANG(°)
(dB )
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.15
0.15
0.14
0.14
0.13
0.13
0.14
0.16
0.18
0.19
0.19
0.20
0.20
0.19
0.13
0.16
0.50
0.69
0.69
0.65
7
-20
-44
-73
-104
-133
-155
-174
169
157
148
140
130
111
73
-38
-117
-168
162
144
2.70
3.47
4.01
4.49
4.89
5.14
5.15
5.10
5.07
5.06
5.08
5.13
5.27
5.49
5.97
6.73
7.01
5.07
3.37
2.38
21
-6
-27
-49
-72
-95
-118
-139
-160
180
160
140
119
98
75
46
3
-38
-65
-86
0.000
0.001
0.001
0.002
0.004
0.006
0.009
0.008
0.007
0.008
0.008
0.008
0.008
0.008
0.011
0.017
0.023
0.022
0.018
0.015
30
104
124
124
119
110
88
64
57
50
37
21
-5
-33
-68
-106
-154
165
141
128
0.21
0.20
0.21
0.20
0.20
0.20
0.20
0.19
0.17
0.16
0.14
0.12
0.10
0.08
0.09
0.11
0.13
0.10
0.07
0.05
153
125
100
80
62
48
34
22
12
0
-12
-21
-24
-14
-10
-24
-73
-128
-160
176
8.6
10.8
12.1
13.1
13.8
14.2
14.2
14.2
14.1
14.1
14.1
14.2
14.4
14.8
15.5
16.6
16.9
14.1
10.6
7.5
V+ = 15 V, TA = 25oC, DC-coupled bias and external DC blocks
Reference planes for S-parameter data include bond wires as specified in the “Recommended
Assembly Diagram”. The S-parameters are also available on floppy disk and the world wide web.
RF CHARACTERISTICS
P AR AM ETER
TES T C ONDITIONS
Gp
Small–s ignal pow e r gain
SWR(in) Input s tanding w a ve ra tio
SWR(out) Output s ta nding w a ve ratio
P 1dB
Output pow e r at 1–dB ga in c ompre s s ion
NF
Nois e figure
IP 3
Output third–order interc ept point
f=2
f=2
f=2
f=2
f=2
f=2
f=4
f=6
TYP
UNIT
to 6 GHz 13.5 dB
to 6 GHz 1.4:1
to 6 GHz 1.4:1
to 6 GHz 17 dBm
to 6 GHz 5.5 dB
GHz
26
GHz
28 dBm
GHz
27
V+ = 15 V, TA = 25oC, DC-coupled bias and external DC blocks
DC CHARACTERISTICS
I+
P AR AM ETER
TES T CONDITIONS
TYP
UNIT
Pos itive s upply c urre nt
V + = 15 V TA = 25°C
68
mA
TA = 25oC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
4
Product Data Sheet
TGA8226-SCC
EQUIVALENT
SCHEMATIC
TYPICAL BIAS
NETWORK
(DC-Blocked Bias Circuit)
TriQuint Semiconductor Texas Phone: (972)994 8465
(DC-Coupled Bias Circuit)
Fax: (972)994 8504 Web: www.triquint.com
5
Product Data Sheet
TGA8226-SCC
RECOMMENDED
ASSEMBLY DIAGRAM
DC-Blocked Bias Circuit
RF connections: Bond using 1-mil diameter, 15-mil-length gold bond wires at both RF Input and RF Output
for optimum RF performance.
Close placement of external components is essential to stability.
Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
6
Product Data Sheet
TGA8226-SCC
RECOMMENDED
ASSEMBLY DIAGRAM
DC-Coupled Circuit
RF connections: Bond using 1-mil diameter, 15-mil-length gold bond wires at both RF Input and RF Output
for optimum RF performance.
Close placement of external components is essential to stability.
Refer to TriQuint’s Recommended Assembly Instructions for GaAs Products.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
7
Product Data Sheet
TGA8226-SCC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
8