4118 TGF4118-EPU • • • • • 18 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm) TGF4118-EPU RF Performance at F = 2.3 GHz Vd = 8.0 V, Vg = -1.1 V, Iq = 1.69 A and T A = 25°C 55 50 Pout PAE 50 Output Power (dBm) 46 45 44 40 42 35 40 38 30 36 25 34 Power Added Efficiency % 48 20 32 30 15 20 22 24 26 28 30 32 Input Power (dBm) TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com 1 130 42 120 41 110 40 100 39 90 38 80 37 Tch 70 36 60 35 Pout 50 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 40 30 Output Power (dBm) Predicted Channel Temp (°C) TGF4118-EPU RF Performance for Vd = 7.0 V, F = 2.3 GHz, and TA = 25°C Quiescent Id is 1.74 A (Vg = -1.1 V), 1.37 A (Vg = -1.3 V), and 1.02 A (Vg = -1.5 V) 34 33 32 60 Power Added Efficiency % 55 50 45 40 35 30 25 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 20 15 15 14 Gain (dB) 13 12 11 10 9 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 8 7 20 21 22 23 24 25 26 27 Input Power (dBm) TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 28 29 30 31 Web: www.triquint.com 2 140 42 130 41 120 40 110 39 100 38 Tch 90 37 80 36 Pout 70 35 60 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 50 40 Output Power (dBm) Predicted Channel Temp (°C) TGF4118-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25°C Quiescent Id is 1.69 A (Vg = -1.1 V), 1.38 A (Vg = -1.3 V), and 1.06 A (Vg = -1.5 V) 34 33 32 60 Power Added Efficiency % 55 50 45 40 35 30 25 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 20 15 15 14 Gain (dB) 13 12 11 10 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 9 8 20 21 22 23 24 25 26 27 Input Power (dBm) TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 28 29 30 31 Web: www.triquint.com 3 160 42 150 41 140 40 130 39 120 38 Tch 110 37 100 36 90 35 Pout 80 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 70 60 Output Power (dBm) Predicted Channel Temp (°C) TGF4118-EPU RF Performance for Vd = 9.0 V, F = 2.3 GHz, and TA = 25°C Quiescent Id is 1.66 A (Vg = -1.1 V), 1.39 A (Vg = -1.3 V), and 1.09 A (Vg = -1.5 V) 34 33 32 55 Power Added Efficiency % 50 45 40 35 30 25 20 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 15 10 15 14 Gain (dB) 13 12 11 10 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 9 8 20 21 22 23 24 25 26 27 Input Power (dBm) TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 28 29 30 31 Web: www.triquint.com 4 DC Characteristics for the TGF4118-EPU DC probe Parameters Nominal Unit IDSS Drain Saturation Current 4410 mA GM Transconductance 2970 mS VP Pinch Off Voltage -1.85 V BVGS Breakdown Voltage Gate-Source -22 V BVGD Breakdown Voltage Gate-Drain -22 V Example of DC I-V Curves Vg = 0.0 V to -2.75 V in 0.25 steps TA = 25°C 4500 4000 Drain Current (mA) 3500 3000 2500 2000 1500 1000 500 0 0 1 2 3 4 5 6 7 8 9 D r a in V o l t a g e ( V ) Absolute Maximum Ratings Drain-to-source Voltage, Vds..............................… … … … … … … … … … … … … … … … ..........12 V Gate-to-source Voltage, Vgs..................… … … … … … … … … … … … … … … … .............-5 V to 0 V Mounting Temperature.................… … … … … … … … … … … … … … … .… .........… … … … … … 320°C Storage Temperature.....................… … … … … … … … … … … … … … .… .............… -65°C to 200°C Power Dissipation...........… … … … … .… … … … … … … … … … … … … … … ..refer to Thermal Model Operating Channel Temperature… … … … … … … … … … … … … … … … .… .refer to Thermal Model Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in this document is not implied. Exposure to absolute maximum rated conditions for extended periods of time may affect device reliability. TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com 5 TGF4118-EPU Linear Model Vds = 7 V and Ids = 1.24 A at T = 25°C FET Elements Lg = .00176 nH Rg = 0.42115 Ω Rgs = 5447 Ω Ri = .05082 Ω Cgs = 18.82602 pF Cdg = 1.03674 pF Rdg = 13600 Ω Rs = 0.06265 Ω Ls = 0.00869 nH Rds = 6.40925 Ω Cds = 3.72019 pF Rd = 0.01831 Ω Ld = 0.00195 nH VCCS Parameters M = 2.04398 S A=0 R1 = 1E19 R2 = 1E19 F=0 T = 4.5116 pS Cdg Rdg Lg Rg Rd VCCS Ld D G Ri Rgs Cds R1 R2 Rds Cgs Rs Ls Freq-GHz MAG-S11 ANG-S11 MAG-S21 ANG-S21 MAG-S12 ANG-S12 MAG-S22 ANG-S22 0.5 0.96061 -157.13 4.44294 98.2855 0.00932 14.7392 0.85196 -178.271 1 0.96275 -168.492 2.25188 88.8751 0.00949 13.5187 0.85594 -178.561 1.5 0.96332 -172.363 1.49968 83.3713 0.00955 15.8589 0.85818 -178.438 2 0.9637 -174.323 1.11963 78.9074 0.00962 19.1829 0.86065 -178.22 2.5 0.96407 -175.515 0.88979 74.9064 0.00971 22.9596 0.86355 -177.98 3 0.96446 -176.325 0.73541 71.1835 0.00985 26.9945 0.86689 -177.746 3.5 0.96488 -176.917 0.62432 67.6655 0.01003 31.1758 0.8706 -177.53 4 0.96532 -177.374 0.54038 64.3208 0.01028 35.4143 0.87462 -177.338 4.5 0.96579 -177.743 0.47464 61.1349 0.01058 39.6273 0.87887 -177.174 5 0.96628 -178.05 0.42171 58.1017 0.01096 43.7382 0.88328 -177.04 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com 6 Thermal Model of TGF4118-EPU Channel Temperature (°C) Predicted Channel Temperature vs Base Plate Temperature With a .020" CM15 (15/85 Copper Molybdenum) carrier plate solder attached using 0.0015" AuSn (80/20) solder 250 240 230 220 210 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 Pd = 5 Watts Pd = 10 Watts 25 35 45 55 65 75 85 95 105 115 125 Base Plate Temperature (°C) Tc = 2.052 + 6.796 x Pd + 0.1465 x Pd 2 + (1.002 + 0.01999 x Pd + 0.0002725 x Pd 2) x Tbase (Predicted Channel Temperature equation for the given assembly stack up) This model assumes perfect solder connections (no voids) between the FET and the carrier plate. HFETChannel Temperature vs Median Life Channel Temperature (°C) 350 300 250 200 150 100 0 1 2 3 4 5 6 7 8 9 10 Median Life (10^X Hours) TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com 7 Mechanical Drawing of TGF4118-EPU 81.0 (2.057) 76.3 (1.938) 69.0 (1.753) 65.3 (1.659) 61.6 (1.565) 52.5 (1.333) 48.8 (1.239) Drain Gate 45.1 (1.145) 35.9 (0.913) 32.2 (0.819) 28.5 (0.725) 19.4 (0.493) 15.7 (0.399) 12.0 (0.305) 4.7 (0.119) 0.0 0.0 7.4 (0.187) 24.9 (0.632) Alternate gate pad 36.0 (0.914) Alternate drain pad Units: mils (mm) Thickness: 4.0 (0.10) Gate pad sizes are 4.0 x 4.0 (0.10 x 0.10) Drain pad sizes are 4.7 x 14.5 (0.12 x 0.37) A minimum of four gate bonds and eight drain bonds is recommended for operation. Sources are connected to backside metalization. Alternate gate and drain pads are located on either end of the FET for paralleling TGF4118-EPUs. TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com 8 Application circuit for the TGF4118-EPU at 2.3 GHz The FET is soldered using AuSn solder at 300 C for 30 secs. Input and Output matching networks are 0.381 mm ZrSn Tioxide substrates (Er = 38). The design load impedance is between 4 Ω and 5 Ω with the 6 pF output capacitance of the FETincluded in the output network. For further explanation refer to the application note “Designing High Efficiency Amplifiers using HFETs”. The carrier plate is 0.51 mm gold plated copper molybdenum. Gold wire (0.018 mm) is used for the bonds. Four gate bonds are required with a length of 0.42 mm. Eight drain bonds are required with a length of 0.42 mm. Bondwire end points on the FET are in the middle of the bond pads. Refer to the figures above for bondwire locations. Connection between the 50 ohm line input to the input match is made by a parallel RC network. R1 in this network is 10 ohms, and C1 is 5.6 pF. The components used are surface mount 0603 piece parts. TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com 9