TOSHIBA TIM1112-15L

MICROWAVE POWER GaAs FET
TIM1112-15L
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
n HIGH POWER
P1dB=42.0dBm at 11.7GHz to 12.7GHz
n HIGH GAIN
G1dB=6.0dB at 11.7GHz to 12.7GHz
n BROAD BAND INTERNALLY MATCHED FET
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
SYMBOL
CONDITIONS
P1dB
UNIT
MIN.
TYP. MAX.
dBm
41.0
42.0

dB
5.0
6.0



4.5
5.5

±0.8
29
-45


Compression Point
Power Gain at 1dB
G1dB
VDS= 9V
f = 11.7 to 12.7GHz
Compression Point
Drain Current
Gain Flatness
IDS1
A
∆G
dB
Power Added Efficiency
ηadd
%
3 Order Intermodulation
Distortion
Drain Current
IM3
Two-tone Test
Po=30.0 dBm
dBc

-42
IDS2
(Single Carrier Level)
A

4.5
5.5
Channel Temperature Rise
∆Tch
(VDS X IDS + Pin – P1dB)
°C


100
UNIT
MIN.
mS

3000

V
-1.5
-3.0
-4.5
A

10.0
11.5
V
-5


°C/W

2.0
2.5
rd
X Rth(c-c)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
SYMBOL
gm
VGSoff
Saturated Drain Current
IDSS
Gate-Source Breakdown
Voltage
VGSO
Thermal Resistance
Rth(c-c)
CONDITIONS
VDS= 3V
IDS= 4.8A
VDS= 3V
IDS= 145mA
VDS= 3V
VGS= 0V
IGS= -145µA
Channel to Case
TYP. MAX.
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No
license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product
Rev. Mar. 2006
TIM1112-15L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current
IDS
A
11.5
Total Power Dissipation (Tc= 25 °C)
PT
W
60.0
Channel Temperature
Tch
°C
175
Storage
Tstg
°C
-65 ∼ +175
2.0 MIN.
PACKAGE OUTLINE (2-11C1B)
4-R3.0
Unit in mm
Gate
Drain
2.0 MIN.
3.2±0.3
12.9±0.2
Source
0.6±0.15
17.0±0.3
5.0 MAX.
2.6±0.3
0.2 MAX.
11.0 MAX.
1.7±0.3
0.1 -0.0
+0.1
21.5 MAX..
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM1112-15L
RF PERFORMANCE
Output Power (Pout) vs. Frequency
VDS=9V
44
IDS≅4.5A
Pin=36.0 dBm
Pout(dBm)
43
42
41
40
11.7
12.2
12.7
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
45
freq.=12.2GHz
43
VDS=9V
50
IDS≅4.5A
Pout
Pout(dBm)
42
40
41
40
30
39
ηadd
38
20
37
36
10
30
32
34
Pin(dBm)
3
36
38
ηadd(%)
44
TIM1112-15L
Power Dissipation(PT) vs. Case Temperature(Tc)
PT(W)
60
30
0
0
40
80
120
160
200
Tc( °C )
IM3 vs. Output Power Characteristics
-10
VDS=9V
-20
freq.=12.7GHz
∆f=5MHz
IM3(dBc)
-30
-40
-50
-60
24
26
28
30
Pout(dBm) @Single carrier level
4
32
34