MICROWAVE POWER GaAs FET TIM1112-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.0dBm at 11.7GHz to 12.7GHz n HIGH GAIN G1dB=6.0dB at 11.7GHz to 12.7GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB SYMBOL CONDITIONS P1dB UNIT MIN. TYP. MAX. dBm 41.0 42.0 dB 5.0 6.0 4.5 5.5 ±0.8 29 -45 Compression Point Power Gain at 1dB G1dB VDS= 9V f = 11.7 to 12.7GHz Compression Point Drain Current Gain Flatness IDS1 A ∆G dB Power Added Efficiency ηadd % 3 Order Intermodulation Distortion Drain Current IM3 Two-tone Test Po=30.0 dBm dBc -42 IDS2 (Single Carrier Level) A 4.5 5.5 Channel Temperature Rise ∆Tch (VDS X IDS + Pin – P1dB) °C 100 UNIT MIN. mS 3000 V -1.5 -3.0 -4.5 A 10.0 11.5 V -5 °C/W 2.0 2.5 rd X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance Rth(c-c) CONDITIONS VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V IGS= -145µA Channel to Case TYP. MAX. u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product Rev. Mar. 2006 TIM1112-15L ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 11.5 Total Power Dissipation (Tc= 25 °C) PT W 60.0 Channel Temperature Tch °C 175 Storage Tstg °C -65 ∼ +175 2.0 MIN. PACKAGE OUTLINE (2-11C1B) 4-R3.0 Unit in mm Gate Drain 2.0 MIN. 3.2±0.3 12.9±0.2 Source 0.6±0.15 17.0±0.3 5.0 MAX. 2.6±0.3 0.2 MAX. 11.0 MAX. 1.7±0.3 0.1 -0.0 +0.1 21.5 MAX.. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM1112-15L RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=9V 44 IDS≅4.5A Pin=36.0 dBm Pout(dBm) 43 42 41 40 11.7 12.2 12.7 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 45 freq.=12.2GHz 43 VDS=9V 50 IDS≅4.5A Pout Pout(dBm) 42 40 41 40 30 39 ηadd 38 20 37 36 10 30 32 34 Pin(dBm) 3 36 38 ηadd(%) 44 TIM1112-15L Power Dissipation(PT) vs. Case Temperature(Tc) PT(W) 60 30 0 0 40 80 120 160 200 Tc( °C ) IM3 vs. Output Power Characteristics -10 VDS=9V -20 freq.=12.7GHz ∆f=5MHz IM3(dBc) -30 -40 -50 -60 24 26 28 30 Pout(dBm) @Single carrier level 4 32 34