STMICROELECTRONICS TIP127FP

TIP122FP
TIP127FP
®
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
■
STMicroelectronics PREFERRED
SALESTYPES
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The TIP122FP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220FP fully
molded isolated package. It is intented for use in
power linear and switching applications.
The complementary PNP type is TIP127FP.
3
1
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 KΩ
R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V CBO
V CEO
V EBO
IC
I CM
IB
P tot
Visol
T stg
Tj
Collector-Base Voltage (I E = 0)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p < 5 ms)
Base Current
Total Dissipation at T case ≤ 25 o C
o
T amb ≤ 25 C
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
Value
TIP122FP
TIP127FP
100
100
5
5
8
0.1
29
2
Unit
1500
V
-65 to 150
150
V
V
V
A
A
A
W
W
o
o
C
C
For PNP types voltage and current values are negative.
March 2003
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TIP122FP / TIP127FP
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
4.3
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Max.
Unit
I CEO
Collector Cut-off
Current (I B = 0)
Parameter
V CE = 50 V
0.5
mA
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 100 V
0.2
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
2
mA
VCEO(sus) * Collector-Emitter
Sustaining Voltage
(I B = 0)
Test Conditions
I C = 30 mA
Min.
Typ.
100
V
V CE(sat) *
Collector-Emitter
Saturation Voltage
IC = 3 A
IC = 5 A
I B = 12 mA
I B = 20 mA
2
4
V
V
V BE(on) *
Base-Emitter Voltage
IC = 3 A
V CE = 3 V
2.5
V
DC Current Gain
I C = 0.5 A
IC = 3 A
V CE = 3 V
V CE = 3 V
h FE *
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
For PNP types voltage and current values are negative.
Safe Operating Area
2/6
Derating Curve
1000
1000
TIP122FP / TIP127FP
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (NPN type)
Collector Emitter Saturation Voltage (PNP type)
Base Emitter Saturation Voltage (NPN type)
Base Emitter Saturation Voltage (PNP type)
3/6
TIP122FP / TIP127FP
Base Emitter On Voltage (NPN type)
Base Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN type)
Freewheel Diode Forward Voltage (PNP type)
Switching Time Resistive Load (NPN type)
Switching Time resistive Load (PNP type)
4/6
TIP122FP / TIP127FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
1 2 3
L2
L4
5/6
TIP122FP / TIP127FP
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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