SGSD100 SGSD200 ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION APPLICATIONS: AUDIO POWER AMPLIFIER ■ DC-AC CONVERTER ■ EASY DRIVER FOR LOW VOLTAGE DC MOTOR ■ GENERAL PURPOSE SWITCHING APPLICATIONS ■ 3 2 1 TO-218 DESCRIPTION The SGSD100 is Silicon Epitaxial-Base NPN power transistor in Monolithic Darlington configuration mounted in TO-218 plastic package. It is inteded for use in general purpose and high current amplifier applications. The complementary PNP type is the SGSD200. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN SGSD100 PNP SGSD200 V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) 80 V Collector Current 25 A Collector Peak Current 40 A IC I CM IB Base Current I BM Base Peak Current P tot Total Dissipation at T c ≤ 25 o C Storage Temperature T stg Tj Max. Operating Junction Temperature 80 Unit V 6 A 10 A 130 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. October 2003 1/6 SGSD100/SGSD200 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.96 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit I CBO Collector Cut-off Current (I E = 0) V CE = 80 V V CE = 80 V T c = 100 o C 0.5 1.5 mA mA I CEV Collector Cut-off Current (V BE = -0.3V) V CE = 80 V V CE = 80 V T c = 100 o C 0.1 2 mA mA I CEO Collector Cut-off Current (I B = 0) V CE = 60 V V CE = 60 V T c = 100 o C 0.5 1.5 mA mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ Collector-Emitter Saturation Voltage I C = 50 mA IC IC IC IC IC IC = = = = = = 5A 5A 10 A 10 A 20 A 20 A 80 IB IB IB IB IB IB = = = = = = 20 20 40 40 80 80 mA mA mA mA mA mA Base-Emitter Saturation Voltage I C = 20 A I C = 20 A IB = 80 mA IB = 80 mA V BE ∗ Base-Emitter Voltage I C = 10 A I C = 10 A VCE = 3 V VCE = 3 V h FE ∗ DC Current Gain IC IC IC IC IC IC = = = = = = 5A 5A 10 A 10 A 20 A 20 A V CE V CE VCE VCE VCE VCE Diode Forward Voltage I F IF IF IF IF IF = = = = = = 5A 5A 10 A 10 A 20 A 20 A VF∗ = = = = = = 3 3 3 3 3 3 V V V V V V T c = 100 o C T c = 100 o C T c = 100 o C T c = 100 o C T c = 100 o C L = 3 mH L = 3 mH 1 1.8 1.6 3 V V 600 5000 8000 4000 8000 2000 2000 15000 500 300 1.2 0.85 1.6 1.4 2.3 1.3 I s/b Second Breakdown Current V CE = 25 V t = 500 ms T c = 100 o C 3.5 V V T c = 100 o C V CC = 30 V V CC = 30 V 1.75 V V V V V V 3.3 T c = 100 o C Second Breakdown Energy 1.2 2.6 2.5 T c = 100 o C T c = 100 o C V 0.95 0.8 1.2 1.3 2 2.3 T c = 100 o C T c = 100 o C E s/b ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP type voltage and current values are negative. 2/6 Min. 12000 6000 V V V V V V 250 250 mJ mJ 6 A SGSD100/SGSD200 Safe Operating Areas DC Current Gain (NPN type) DC Current Gain (PNP type) DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) 3/6 SGSD100/SGSD200 Collector-Emitter Saturation Voltage (PNP type) 4/6 SGSD100/SGSD200 TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 31 0.163 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 1 2 3 P025A 5/6 SGSD100/SGSD200 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6