TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T/146T/147T Equivalent Circuit C B TO-220 1 1.Base 2.Collector R1 3.Emitter R2 R1 ≅ 8kΩ R2 ≅ 0.12kΩ E Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP140T : TIP141T : TIP142T 60 80 100 V V V VCEO Collector-Emitter Voltage : TIP140T : TIP141T : TIP142T 60 80 100 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 10 A ICP Collector Current (Pulse) 15 A IB Base Current (DC) 0.5 A PC Collector Dissipation (TC=25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. © 2009 Fairchild Semiconductor Corporation TIP140T / TIP141T / TIP142T Rev. B2 www.fairchildsemi.com 1 TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor July 2009 Symbol VCEO(sus) ICEO TA = 25°C unless otherwise noted Parameter Test Condition Collector-Emitter Sustaining Voltage : TIP140T : TIP141T : TIP142T IC = 30mA, IB = 0 Min. Typ. Max. 60 80 100 Units V V V Collector Cut-off Current : TIP140T : TIP141T : TIP142T VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 2 2 2 mA mA mA Collector Cut-off Current : TIP140T : TIP141T : TIP142T VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 1 1 1 mA mA mA IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA hFE DC Current Gain VCE = 4V, IC = 5A VCE =4V, IC = 10A VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA IC = 10A, IB = 40mA 2 3 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V VBE(on) Base-Emitter On Voltage VCE = 4V, IC = 10A 3 V tD Delay Time tR Rise Time VCC = 30V, IC = 5A IB1 = 20mA IB2 = -20mA RL = 6Ω ICBO tSTG tF Storage Time Fall Time © 2009 Fairchild Semiconductor Corporation TIP140T / TIP141T / TIP142T Rev. B2 1000 500 0.15 µs 0.55 µs 2.5 µs 2.5 µs www.fairchildsemi.com 2 TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor Electrical Characteristics 10 IB = 2000uA IB = IC[A], COLLECTOR CURRENT IB = 1800uA 8 IB = 1600uA 7 IB = 1400uA 0uA 120 00uA = 10 IB 100k IB = 800uA VCE = 4V IB = 600uA hFE, DC CURRENT GAIN 9 IB = 400uA 6 5 4 IB = 200uA 3 2 10k 1k 100 1 0 0 1 2 3 4 10 0.1 5 1 100 Figure 2. DC current Gain 1000 10 IC=500IB f=0.1MHz Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 1 10 100 10 100 1 10 IC[A], COLLECTOR CURRENT 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 100 PC[W], POWER DISSIPATION 100 10 D C IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 1 TIP140T TIP141T TIP142T 80 60 40 20 0 0.1 1 10 100 0 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating © 2009 Fairchild Semiconductor Corporation TIP140T / TIP141T / TIP142T Rev. B2 25 www.fairchildsemi.com 3 TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor Typical Performance Characteristics TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor Physical Dimensions TO-220 © 2009 Fairchild Semiconductor Corporation TIP140T / TIP141T / TIP142T Rev. B2 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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