FAIRCHILD TIP41_08

TIP41/TIP41A/TIP41B/TIP41C
NPN Epitaxial Silicon Transistor
Features
• Complementary to TIP42/TIP42A/TIP42B/TIP42C
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Emitter Voltage: TIP41
: TIP41A
: TIP41B
: TIP41C
40
60
80
100
V
V
V
V
VCEO
Collector-Emitter Voltage: TIP41
: TIP41A
: TIP41B
: TIP41C
40
60
80
100
V
V
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
6
A
ICP
Collector Current (Pulse)
10
A
IB
Base Current
2
A
PC
Collector Dissipation (TC=25°C)
65
W
Collector Dissipation (Ta=25°C)
2
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
© 2008 Fairchild Semiconductor Corporation
TIP41/TIP41A/TIP41B/TIP41C Rev. A
www.fairchildsemi.com
1
TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor
July 2008
Symbol
VCEO(sus)
ICEO
Parameter
Test Condition
* Collector-Emitter Sustaining Voltage
: TIP41
: TIP41A
: TIP41B
: TIP41C
IC = 30mA, IB = 0
Min.
Max.
40
60
80
100
Units
V
V
V
V
Collector Cut-off Current
: TIP41/41A
: TIP41B/41C
VCE = 30V, IB = 0
VCE = 60V, IB = 0
0.7
0.7
mA
mA
Collector Cut-off Current
: TIP41
: TIP41A
: TIP41B
: TIP41C
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
400
400
400
400
μA
μA
μA
μA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
1
mA
hFE
* DC Current Gain
VCE = 4V,IC = 0.3A
VCE = 4V, IC = 3A
ICES
30
15
75
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 6A, IB = 600mA
1.5
V
VBE(sat)
* Base-Emitter Saturation Voltage
VCE = 4V, IC = 6A
2.0
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 500mA, f = 1MHz
3.0
MHz
* Pulse Test: PW≤300ms, Duty Cycle≤2%
© 2008 Fairchild Semiconductor Corporation
TIP41/TIP41A/TIP41B/TIP41C Rev. A
www.fairchildsemi.com
2
TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor
Electrical Characteristics TC=25°C unless otherwise noted
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
1000
hFE, DC CURRENT GAIN
VCE = 4V
100
10
1
1
10
100
1000
10000
IC/IB = 10
1000
VBE(sat)
100
VCE(sat)
10
1
10000
10
IC[mA], COLLECTOR CURRENT
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
PC[W], POWER DISSIPATION
100
IC(MAX) (PULSE)
10
ms
0.5
s
5m
IC(MAX) (DC)
s
1m
IC[A], COLLECTOR CURRENT
100
1
TIP41 VCEO MAX.
TIP41A VCEO MAX.
TIP41B VCEO MAX.
TIP41C VCEO MAX.
0.1
80
60
40
20
0
1
10
100
0
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
© 2008 Fairchild Semiconductor Corporation
TIP41/TIP41A/TIP41B/TIP41C Rev. A
25
Figure 4. Power Derating
www.fairchildsemi.com
3
TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor
Typical Characteristics
TIP41/TIP41A/TIP41B/TIP41C — NPN Epitaxial Silicon Transistor
Mechanical Dimensions
TO220
© 2008 Fairchild Semiconductor Corporation
TIP41/TIP41A/TIP41B/TIP41C Rev. A
www.fairchildsemi.com
4
TIP41/TIP41A/TIP41B/TIP41C NPN Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation
TIP41/TIP41A/TIP41B/TIP41C Rev. A
www.fairchildsemi.com
5